The field of terahertz devices is important in terahertz technology.However,most of the current devices have limited functionality and poor performance.To improve device performance and achieve multifunctionality,we d...The field of terahertz devices is important in terahertz technology.However,most of the current devices have limited functionality and poor performance.To improve device performance and achieve multifunctionality,we designed a terahertz device based on a combination of VO_(2)and metamaterials.This device can be tuned using the phase-transition characteristics of VO_(2),which is included in the triple-layer structure of the device,along with SiO_(2)and Au.The terahertz device exhibits various advantageous features,including broadband coverage,high absorption capability,dynamic tunability,simple structural design,polarization insensitivity,and incidentangle insensitivity.The simulation results showed that by controlling the temperature,the terahertz device achieved a thermal modulation range of spectral absorption from 0 to 0.99.At 313 K,the device exhibited complete reflection of terahertz waves.As the temperature increased,the absorption rate also increased.When the temperature reached 353 K,the device absorption rate exceeded 97.7%in the range of 5-8.55 THz.This study used the effective medium theory to elucidate the correlation between conductivity and temperature during the phase transition of VO_(2).Simultaneously,the variation in device performance was further elucidated by analyzing and depicting the intensity distribution of the electric field on the device surface at different temperatures.Furthermore,the impact of various structural parameters on device performance was examined,offering valuable insights and suggestions for selecting suitable parameter values in real-world applications.These characteristics render the device highly promising for applications in stealth technology,energy harvesting,modulation,and other related fields,thus showcasing its significant potential.展开更多
基金support from the National Natural Science Foundation of China(Nos.51606158,11604311,and 12074151)Sichuan Science and Technology Program(No.2021JDRC0022)+3 种基金Natural Science Foundation of Fujian Province(No.2021J05202)Research Project of Fashu Foundation(No.MFK23006)Open Fund of the Key Laboratory of Metallurgical Equipment and Control Technology of Ministry of Education in Wuhan University of Science and Technology(No.MECOF2022B01)the project supported by Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology(No.DH202321).
文摘The field of terahertz devices is important in terahertz technology.However,most of the current devices have limited functionality and poor performance.To improve device performance and achieve multifunctionality,we designed a terahertz device based on a combination of VO_(2)and metamaterials.This device can be tuned using the phase-transition characteristics of VO_(2),which is included in the triple-layer structure of the device,along with SiO_(2)and Au.The terahertz device exhibits various advantageous features,including broadband coverage,high absorption capability,dynamic tunability,simple structural design,polarization insensitivity,and incidentangle insensitivity.The simulation results showed that by controlling the temperature,the terahertz device achieved a thermal modulation range of spectral absorption from 0 to 0.99.At 313 K,the device exhibited complete reflection of terahertz waves.As the temperature increased,the absorption rate also increased.When the temperature reached 353 K,the device absorption rate exceeded 97.7%in the range of 5-8.55 THz.This study used the effective medium theory to elucidate the correlation between conductivity and temperature during the phase transition of VO_(2).Simultaneously,the variation in device performance was further elucidated by analyzing and depicting the intensity distribution of the electric field on the device surface at different temperatures.Furthermore,the impact of various structural parameters on device performance was examined,offering valuable insights and suggestions for selecting suitable parameter values in real-world applications.These characteristics render the device highly promising for applications in stealth technology,energy harvesting,modulation,and other related fields,thus showcasing its significant potential.
