In this paper, a new numerical method-Kuhn algorithm with contour integral-is intrroduced and used to calculate the complex dielectric permittivities of materials from the short-circuitedwaveguide measurements. Some n...In this paper, a new numerical method-Kuhn algorithm with contour integral-is intrroduced and used to calculate the complex dielectric permittivities of materials from the short-circuitedwaveguide measurements. Some numerical results are given to verify the validity and efficiency ofthe new numerical method and the complex dielectric permittivities of materials calculated by thenew numerical method are quite identical with the results given by other works.展开更多
The main focus of the research was to correlate the microstructure with dielectric and magnetic properties of Bi1-xBaxFeO3 samples. Bi1-xBaxFeO3 samples（x = 0.1, 0.2 and 0.3） were synthesized by the conventional sol...The main focus of the research was to correlate the microstructure with dielectric and magnetic properties of Bi1-xBaxFeO3 samples. Bi1-xBaxFeO3 samples（x = 0.1, 0.2 and 0.3） were synthesized by the conventional solid-state reaction method using nano-powders of Bi2O3, Fe2O3, and BaCO3. Thereafter, field emission scanning electron microscope and X-ray diffraction（XRD） techniques were used to examine the structure and phase of the samples. Phase analysis by XRD indicated that the single-phase perovskite structure was formed with possible increment in lattice parameter with increasing Ba doping. Complex permeability（u＇iand u＇＇i） measured using impedance analyzer confirmed the increase in magnetic property with increasing Ba doping. Finally, dielectric constant（k） was analyzed as a function of temperature at different frequencies. Dielectric constant as high as 2900 was attained in this research for Bi0.8Ba0.2FeO3 sample due to reduction in leakage current at this composition.展开更多
We have investigated the optical properties of gallium arsenide(GaAs) in the photon energy range 0.6- 6.0 eV.We obtained a refractive index which has a maximum value of 5.0 at a photon energy of 3.1 eV;an extinction c...We have investigated the optical properties of gallium arsenide(GaAs) in the photon energy range 0.6- 6.0 eV.We obtained a refractive index which has a maximum value of 5.0 at a photon energy of 3.1 eV;an extinction coefficient which has a maximum value of 4.2 at a photon energy of 5.0 eV;the dielectric constant,the real part of the complex dielectric constant has a maximum value of 24 at a photon energy of 2.8 eV and the imaginary part of the complex dielectric constant has a maximum value of 26.0 at a photon energy of 4.8 eV;the transmittance which has a maximum value of 0.22 at a photon energy of 4.0 eV;the absorption coefficient which has a maximum value of 0.22×10~8 m^(-1) at a photon energy of 4.8 eV,the reflectance which has a maximum value of 0.68 at 5.2eV; the reflection coefficient which has a maximum value of 0.82 at a photon energy of 5.2 eV;the real part of optical conductivity has a maximum value of 14.2×10^(15) at 4.8 eV and the imaginary part of the optical conductivity has a maximum value of 6.8×10^(15) at 5.0 eV.The values obtained for the optical properties of GaAs are in good agreement with other results.展开更多
文摘In this paper, a new numerical method-Kuhn algorithm with contour integral-is intrroduced and used to calculate the complex dielectric permittivities of materials from the short-circuitedwaveguide measurements. Some numerical results are given to verify the validity and efficiency ofthe new numerical method and the complex dielectric permittivities of materials calculated by thenew numerical method are quite identical with the results given by other works.
文摘The main focus of the research was to correlate the microstructure with dielectric and magnetic properties of Bi1-xBaxFeO3 samples. Bi1-xBaxFeO3 samples（x = 0.1, 0.2 and 0.3） were synthesized by the conventional solid-state reaction method using nano-powders of Bi2O3, Fe2O3, and BaCO3. Thereafter, field emission scanning electron microscope and X-ray diffraction（XRD） techniques were used to examine the structure and phase of the samples. Phase analysis by XRD indicated that the single-phase perovskite structure was formed with possible increment in lattice parameter with increasing Ba doping. Complex permeability（u＇iand u＇＇i） measured using impedance analyzer confirmed the increase in magnetic property with increasing Ba doping. Finally, dielectric constant（k） was analyzed as a function of temperature at different frequencies. Dielectric constant as high as 2900 was attained in this research for Bi0.8Ba0.2FeO3 sample due to reduction in leakage current at this composition.
文摘We have investigated the optical properties of gallium arsenide(GaAs) in the photon energy range 0.6- 6.0 eV.We obtained a refractive index which has a maximum value of 5.0 at a photon energy of 3.1 eV;an extinction coefficient which has a maximum value of 4.2 at a photon energy of 5.0 eV;the dielectric constant,the real part of the complex dielectric constant has a maximum value of 24 at a photon energy of 2.8 eV and the imaginary part of the complex dielectric constant has a maximum value of 26.0 at a photon energy of 4.8 eV;the transmittance which has a maximum value of 0.22 at a photon energy of 4.0 eV;the absorption coefficient which has a maximum value of 0.22×10~8 m^(-1) at a photon energy of 4.8 eV,the reflectance which has a maximum value of 0.68 at 5.2eV; the reflection coefficient which has a maximum value of 0.82 at a photon energy of 5.2 eV;the real part of optical conductivity has a maximum value of 14.2×10^(15) at 4.8 eV and the imaginary part of the optical conductivity has a maximum value of 6.8×10^(15) at 5.0 eV.The values obtained for the optical properties of GaAs are in good agreement with other results.
