The integrated absorption cross section Σ abs, peak emis sion cross section σ emi, Judd-Ofeld intensity parameters Ω t(t=2,4,6), and spontaneous emission probability A R of Er 3+ ions were determined fo r...The integrated absorption cross section Σ abs, peak emis sion cross section σ emi, Judd-Ofeld intensity parameters Ω t(t=2,4,6), and spontaneous emission probability A R of Er 3+ ions were determined fo r Erbium doped alkali and alkaline earth phosphate glasses. It is found the comp ositional dependence of σ emi is almost similar to that of Σ abs, wh ich is determined by the sum of Ω t (3Ω 2+10Ω 4+21Ω 6). In addition, the compositional dependence of Ω t was studied in these glass systems. As a resu lt, compared with Ω 4 and Ω 6, the Ω 2 has a stronger compositional depend ence on the ionic radius and content of modifiers. The covalency of Er-O bonds in phosphate glass is weaker than that in silicate glass, germanate glass, alumi nate glass, and tellurate glass, since Ω 6 of phosphate glass is relatively la rge. A R is affected by the covalency of the Er 3+ ion sites and correspon ds to the Ω 6 value.展开更多
Residual electrical resistivity due to short-range order has been calculated for Cu100-xAlx (x=9.13,13.56, 14.5 and 14.76 in at pct) alloys using pseudopotential approach, and the results have been discussed in the li...Residual electrical resistivity due to short-range order has been calculated for Cu100-xAlx (x=9.13,13.56, 14.5 and 14.76 in at pct) alloys using pseudopotential approach, and the results have been discussed in the light of experimental studies of the local-order structure of these alloys. In case of Cu85.5Al14.5, change in the total residual electrical resistivity due to neutron-irradiation effects has been estimated by including contributions from the short-range order and static atomic displacement correction. Our results show a decrease in the residual resistivity in the irradiated Cu-Al solid solution as compared to the unirradiated sample. This is in accordance with the experimental results展开更多
Thin films of ZnxCd1-xS have been prepared by electron beam evaporation of a mixture of ZnS & CdS powders. The films are deposited onto sodalime glass slides under similar conditions.The composition of the films i...Thin films of ZnxCd1-xS have been prepared by electron beam evaporation of a mixture of ZnS & CdS powders. The films are deposited onto sodalime glass slides under similar conditions.The composition of the films is varied from CdS to ZnS (x=0 to 1). The films show a regular change in color from toner red to orange yellow as Zn concentration increases to maximum.These films are characterized for their optical, electricaI and structural properties. The bandgap value of ZnxCd1-xS films is found to vary linearIy from 2.20 eV to 3.44 eV with change in the x value from 0 to 1. The resistivity of these films is in the range of 171.0 Ωcm to 5.5× 106Ωcm for x=0~0.6. All the samples show cubic structure after annealing in air at 250℃ for 40 min.The lattice constant ao varies from 0.5884 nm to 0.54109 nm linearly.展开更多
A series of Al=-（Alq3）l-x granular films is prepared on Si wafer with native oxide layer using co-evaporation technique. Large lateral photovoltaic effect （LPE） is observed, with an optimal LPV sensitivity of 75 m...A series of Al=-（Alq3）l-x granular films is prepared on Si wafer with native oxide layer using co-evaporation technique. Large lateral photovoltaic effect （LPE） is observed, with an optimal LPV sensitivity of 75 mV/mm in x=0.35 sample. The dependence of LPE on temperature and A1 composition is investigated, and the possible mechanism is discussed.展开更多
基金Funded by the Natural Science Foundation of Guangdong Prov ince(013013) and the Science and Technology Plan of Guangdong Province(2002B11604)
文摘The integrated absorption cross section Σ abs, peak emis sion cross section σ emi, Judd-Ofeld intensity parameters Ω t(t=2,4,6), and spontaneous emission probability A R of Er 3+ ions were determined fo r Erbium doped alkali and alkaline earth phosphate glasses. It is found the comp ositional dependence of σ emi is almost similar to that of Σ abs, wh ich is determined by the sum of Ω t (3Ω 2+10Ω 4+21Ω 6). In addition, the compositional dependence of Ω t was studied in these glass systems. As a resu lt, compared with Ω 4 and Ω 6, the Ω 2 has a stronger compositional depend ence on the ionic radius and content of modifiers. The covalency of Er-O bonds in phosphate glass is weaker than that in silicate glass, germanate glass, alumi nate glass, and tellurate glass, since Ω 6 of phosphate glass is relatively la rge. A R is affected by the covalency of the Er 3+ ion sites and correspon ds to the Ω 6 value.
文摘Residual electrical resistivity due to short-range order has been calculated for Cu100-xAlx (x=9.13,13.56, 14.5 and 14.76 in at pct) alloys using pseudopotential approach, and the results have been discussed in the light of experimental studies of the local-order structure of these alloys. In case of Cu85.5Al14.5, change in the total residual electrical resistivity due to neutron-irradiation effects has been estimated by including contributions from the short-range order and static atomic displacement correction. Our results show a decrease in the residual resistivity in the irradiated Cu-Al solid solution as compared to the unirradiated sample. This is in accordance with the experimental results
文摘Thin films of ZnxCd1-xS have been prepared by electron beam evaporation of a mixture of ZnS & CdS powders. The films are deposited onto sodalime glass slides under similar conditions.The composition of the films is varied from CdS to ZnS (x=0 to 1). The films show a regular change in color from toner red to orange yellow as Zn concentration increases to maximum.These films are characterized for their optical, electricaI and structural properties. The bandgap value of ZnxCd1-xS films is found to vary linearIy from 2.20 eV to 3.44 eV with change in the x value from 0 to 1. The resistivity of these films is in the range of 171.0 Ωcm to 5.5× 106Ωcm for x=0~0.6. All the samples show cubic structure after annealing in air at 250℃ for 40 min.The lattice constant ao varies from 0.5884 nm to 0.54109 nm linearly.
基金supported by the National Natural Science Foundation of China(52071024,52271003,52101188)Guangdong Basic and Applied Basic Research Foundation(2020B1515120077)+4 种基金the Funds for Creative Research Groups of NSFC(51921001)the Projects of International Cooperation and Exchanges of NSFC(51961160729,52061135207)the 111 Project(BP0719004)the Program for Changjiang Scholars and Innovative Research Team in University of China(IRT_14R05)the Project funded by China Postdoctoral Science Foundation(2020M680009)。
基金supported by the National Natural Science Foundation of China under Grant No.61076093
文摘A series of Al=-（Alq3）l-x granular films is prepared on Si wafer with native oxide layer using co-evaporation technique. Large lateral photovoltaic effect （LPE） is observed, with an optimal LPV sensitivity of 75 mV/mm in x=0.35 sample. The dependence of LPE on temperature and A1 composition is investigated, and the possible mechanism is discussed.
