Relevant State Agencies Will Conduct a Joint Annual Inspection on Foreign Invested Enterprises

The Ministry of Foreign Trade and Economic Coop-eration (MOFTEC),the State Administration forIndustry and Commerce (SAIC),the State Economicand Trade Commission (SETC),the Ministry of Finance(MOF),the State Administration for Exchange Control(SAEC),the State Taxation Bureau (STB) and the GeneralCustoms Administration (GCA) (hereinafter referred to asCompetent Joint Annual Inspection Agencies) have jointlyissued a circular a few days before which stipulates that,from the year 1997 onwards,a joint annual inspection willbe conducted on FIEs in order to further improve and stan-dardize China’s investment environment,lessen the burdenson the shoulders of enterprises and enhance the level of ad-ministration over FIEs.

Study on Conductivity of Ceramics LaFe_(1 - x) Ni_xO_(3-δ)

The LaFe 1-x Ni x O 3-δ serial ceramics were prepared by standard solid phase reaction method. Two arm electric bridge principal and four electrode method were adopted to measure the resistivity. The results indicate that LaFe 1-x Ni x O 3-δ ceramics are of metallic state conductivity when x varies from 0 6 to 0 8. There are oxygen vacancies and conductive electrons in the ceramics, which results in highly mixed conductivity of electrons and oxygen ions. The amount of oxygen vacancies depends on the sintering techniques, so the proper increase of sintering temperature can decrease the room temperature resistivity. A phase transition is found at around 120 K in the low temperature experiment.

Novel conductance step in carbon nanotube with wing-like zigzag graphene nanoribbons

Connecting one armchair carbon nanotube（CNT） to several zigzag graphene nanoribbons（ZGNRs） we find that the topologically-protected edge states of ZGNRs and the massless Dirac particle inherited from CNT still hold from the analysis of the band structure and the edge state. Furthermore, the lowest conductance step at the valley bottom increases proportionally with increasing the number of ZGNR wings. A novel conductance step of a peak occurs in the valley, which is two steps higher than the lowest step at the valley bottom. In addition, with increasing the number of ZGNR wings the width of the novel conductance step becomes narrow.

Dependence of transient performance on potential distribution in a static induction thyristor channel

The impact of potential barrier distribution on the transient performance of a static induction thyristor （SITH） in a channel determined by geometrical parameters and applied bias voltage is studied theoretically and experimentally. The analytical expressions of potential barrier height and the I-V characteristics of the SITH are also derived. The main factors that influence the transient performance of the SITH between the blocking and conducting states, as well as the mechanism underlying the transient process, is thoroughly investigated. This is useful in designing, fabricating, optimizing and applying SITHs properly.

An analytic model to describe the relationship between conductance and frequency of heterojunction

The admittance measurements of a hetero-junction can be used to derive the density of the interfacial state in the hetero-junction. Hence, prediction conductance via frequency is very useful for comprehension of the admittance of a hetero-junction using a mathematical strategy. From the observations on the curve of the frequencydependent conductance of the hetero-junction an analytic model with four-parameters was developed that relates conductance to frequency; the theoretical results agree quite well with the experimental data. The model shows potential for a variety of applications including different electronic devices. The model is a practical tool that can be readily used for assessing the electronic behaviors of a hetero-junction and is scientifically justifiable. In addition, the mathematical bridge to link the density of the interfacial state of the（pyronine-B）/p-Si structure to energy implies a good route to discuses the density of the interfacial state of interfaces.