Influence of alloy components on arc erosion morphology of Ag/MeO electrical contact materials

Arc erosion morphologies of Ag/MeO（10） electrical contact materials after 50000 operations under direct current of 19 V and 20 A and resistive load conditions were investigated using scanning electron microscope（SEM） and a 3D optical profiler（3DOP）. The results indicated that 3DOP could supply clearer and more detailed arc erosion morphology information. Arc erosion resistance of Ag/SnO_2（10） electrical contact material was the best and that of Ag/CuO（10） was the worst. Arc erosion morphology of Ag/MeO（10） electrical contact materials mainly included three different types. Arc erosion morphologies of Ag/ZnO（10） and Ag/SnO_2（10） electrical contact materials were mainly liquid splash and evaporation, and those of Ag/CuO（10） and Ag/CdO（10） were mainly material transfer from anode to cathode. Arc erosion morphology of Ag/SnO_2（6）In_2O_3（4） electrical contact materials included both liquid splash, evaporation and material transfer. In addition, the formation process and mechanism on arc erosion morphology of Ag/MeO（10） electrical contact materials were discussed.

Influence of operation number on arc erosion behavior of Ag/Ni electrical contact materials

Arc erosion behavior of Ag/Ni materials with different operation numbers was investigated by OM,3DOP and SEM.The results indicated that the arc erosion of Ag/10Ni electrical contact material fabricated by sintering−extrusion technology was more and more serious with the operation numbers increasing from 1000 to 40000.With the same operation numbers,the arc erosion on anode was more serious than that on cathode.Besides,the pores preferred to emerge around the arc effect spot during the first 10000 operations.And the morphology of the molten silver on cathode and anode was different due to the action of gravity and arc erosion.Furthermore,the relationships among arc energy,arc time,welding force,electric resistivity,temperature and mass change on contacts were discussed,which indicated that the mass loss on cathode was mainly caused by the fracture of molten bridge.

Thermal stability of the spin injection in Co/Ag/Co lateral spin valves

Spin injection, spin diffusion, and spin detection are investigated in Co/Ag/Co lateral spin valves at room temperature.Clear spin accumulation signals are detected by the non-local measurement. By fitting the results to the one-dimensional diffusion equation,8.6% spin polarization of the Co/Ag interface and -180 nm spin diffusion length in Ag are obtained.Thermal treatment results show that the spin accumulation signal drastically decreases after 100℃ annealing, and disappears under 200℃ annealing. Our results demonstrate that, compared to the spin diffusion length, the decrease and the disappearance of the spin accumulation signal are mainly dominated by the variation of the interfacial spin polarization of the Co/Ag interface.

Forming-free artificial synapses with Ag point contacts at interface

Ag/Ta_(2)O_(5)/CuO/Pt memristive devices with Ag point contacts at the interface exhibit forming-free and partial volatile analog resistive switching properties.Versatile synaptic functions,like the short-term plasticity,the long-term potentiation and the paired-pulse facilitation,are emulated with these devices.The Ag point contacts in the Ta_(2)O_(5)layer are verified through transmission electron microscope(TEM)and X-ray photoelectron spectroscope(XPS).The Ag point contacts at the interface endow the device the transition from the electrochemical metallization mode to the valence change mode,and the analog resistive switching behavior and neuromorphic functions.This interface engineering of introducing point contacts at the interface provides a way for the development of neuromorphic devices with low power consumption.