In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current–voltage（I–V –T） characteristics of a Schottky barrier diode fabricated on free...In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current–voltage（I–V –T） characteristics of a Schottky barrier diode fabricated on free-standing GaN substrate for reverse-bias voltages up to-150 V. The model suggests that the reverse leakage current is dominated by the direct tunneling of electrons from Schottky contact metal into a continuum of states associated with conductive dislocations in GaN epilayer.A reverse leakage current ideality factor, which originates from the scattering effect at metal/GaN interface, is introduced into the model. Good agreement between the experimental data and the simulated I–V curves is obtained.展开更多
The erosion of silver contacts due to break arcs with length proportional to time and of variable duration has been measured by weighing the contacts following 5000 openings at a constant current equal to 40 A.The exp...The erosion of silver contacts due to break arcs with length proportional to time and of variable duration has been measured by weighing the contacts following 5000 openings at a constant current equal to 40 A.The experimental results show that,for arc durations shorter than 60 μs,the transfer of metal from the anode to the cathode occurs,but after passing this stage,when the two electrodes are separated by greater distances,each will display erosion.This is the result of the diffusion of material outside the space between the two electrodes.In order to interpret these results,we have applied a classical model of the physical phenomena occurring at the root of the arc.Analysis of the experimental results shows that for an arc duration of less than15 μs,no distinct cathode root is seen to exist,but beyond this,several spots appear gradually on the cathode for arc duration up to 50 μs,after which they merge into a single spot.The comparison between experiment results and theoretical interpretation is reasonable up to 60 μs.展开更多
In this work,we discuss the origin of several anomalies present in the point-contact Andreev reflection spectra of（Li1-xFex）OHFeSe,LiTi2O4,and La2-xCexCuO4.While these features are similar to those stemming from int...In this work,we discuss the origin of several anomalies present in the point-contact Andreev reflection spectra of（Li1-xFex）OHFeSe,LiTi2O4,and La2-xCexCuO4.While these features are similar to those stemming from intrinsic superconducting properties,such as Andreev reflection,electron-boson coupling,multigap superconductivity,d-wave and p-wave pairing symmetry,they cannot be accounted for by the modified Blonder–Tinkham–Klapwijk（BTK） model,but require to consider critical current effects arising from the junction geometry.Our results point to the importance of tracking the evolution of the dips and peaks in the differential conductance as a function of the bias voltage,in order to correctly deduce the properties of the superconducting state.展开更多
With the continuous development of industrial technology, the weak current plays an increasingly important role in all fields of life. In order to facilitate the user to carry, the study of contactless weak current me...With the continuous development of industrial technology, the weak current plays an increasingly important role in all fields of life. In order to facilitate the user to carry, the study of contactless weak current measurement technology is also emerging. This article’s design idea is based on two-dimensional reluctance sensor device built non-contact weak current detection system. The system uses the reluctance sensor HMC1002 to collect the current signal and the temperature sensor DS18B20 to compensate the temperature. The signals collected by the reluctance sensor and the temperature sensor are extremely weak. After being amplified by the amplifying circuit, the signal is conducive to subsequent detection and processing. Filter circuit can filter out interference signals to achieve the goal of improving accuracy. After the corresponding algorithm of the microcontroller will convert the signal voltage, easy to read and store, thus designing a non-contact current measurement capable of detecting weak currents and achieving higher accuracy.展开更多
特高压直流GIL运行可靠性取决于内绝缘设计的可靠性。此外,导电元件直流电流密度的取值、弹簧触头的定位设计、GIL各元件中的绝缘件与金具连接处的楔形气隙的处理以及母线中支撑件的结构设计细节,都会对产品运行可靠性产生重大影响,不...特高压直流GIL运行可靠性取决于内绝缘设计的可靠性。此外,导电元件直流电流密度的取值、弹簧触头的定位设计、GIL各元件中的绝缘件与金具连接处的楔形气隙的处理以及母线中支撑件的结构设计细节,都会对产品运行可靠性产生重大影响,不能忽视。对于运行环境十分严酷的UHV DC GIL为保证内绝缘工作可靠性和减少气体维护工作量,文中还提出了高气密性结构设计。为适应-50℃低温运行要求,产品选用了液化温度很低的N_(2)/SF_(6)混合气体,对两种气体的配比,压力特性和绝缘特性进行了讨论与计算。还有产品的局放、气体密度及微水含量的监视系统的可靠性设计,都会对产品运行可靠性产生直接影响。文中对上述问题的研究成果作了介绍,可供高压直流产品设计使用。对其中未解的新技术如基于冷镜露点测试原理、微机电技术制作的智能气体湿度和密度监测装置、高压直流复合绝缘套管伞面局放起始场强提出了研究方案。文中提出的诸多GIL运行可靠性设计要点,对于其他超/特高压直流气体绝缘电器可参考选用。展开更多
文摘In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current–voltage（I–V –T） characteristics of a Schottky barrier diode fabricated on free-standing GaN substrate for reverse-bias voltages up to-150 V. The model suggests that the reverse leakage current is dominated by the direct tunneling of electrons from Schottky contact metal into a continuum of states associated with conductive dislocations in GaN epilayer.A reverse leakage current ideality factor, which originates from the scattering effect at metal/GaN interface, is introduced into the model. Good agreement between the experimental data and the simulated I–V curves is obtained.
文摘The erosion of silver contacts due to break arcs with length proportional to time and of variable duration has been measured by weighing the contacts following 5000 openings at a constant current equal to 40 A.The experimental results show that,for arc durations shorter than 60 μs,the transfer of metal from the anode to the cathode occurs,but after passing this stage,when the two electrodes are separated by greater distances,each will display erosion.This is the result of the diffusion of material outside the space between the two electrodes.In order to interpret these results,we have applied a classical model of the physical phenomena occurring at the root of the arc.Analysis of the experimental results shows that for an arc duration of less than15 μs,no distinct cathode root is seen to exist,but beyond this,several spots appear gradually on the cathode for arc duration up to 50 μs,after which they merge into a single spot.The comparison between experiment results and theoretical interpretation is reasonable up to 60 μs.
基金Project supported by the National Key Basic Research Program of China(Grant Nos.2015CB921000,2016YFA0300301,and 2017YFA0302902)the National Natural Science Foundation of China(Grant Nos.11674374 and 1474338)+5 种基金the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(Grant No.QYZDB-SSW-SLH008)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant Nos.XDB07020100 and XDB07030200)the Beijing Municipal Science and Technology Project(Grant No.Z161100002116011)the Fonds de la Recherche Scientifique–FNRS and the ARC Grant 13/18-08 for Concerted Research Actions,financed by the French Community of Belgium(Wallonia-Brussels Federation)Jérémy Brisbois acknowledges the support from F.R.S.–FNRS(Research Fellowship)The work of Alejandro V Silhanek is partially supported by PDR T.0106.16 of the F.R.S.–FNRS
文摘In this work,we discuss the origin of several anomalies present in the point-contact Andreev reflection spectra of（Li1-xFex）OHFeSe,LiTi2O4,and La2-xCexCuO4.While these features are similar to those stemming from intrinsic superconducting properties,such as Andreev reflection,electron-boson coupling,multigap superconductivity,d-wave and p-wave pairing symmetry,they cannot be accounted for by the modified Blonder–Tinkham–Klapwijk（BTK） model,but require to consider critical current effects arising from the junction geometry.Our results point to the importance of tracking the evolution of the dips and peaks in the differential conductance as a function of the bias voltage,in order to correctly deduce the properties of the superconducting state.
文摘With the continuous development of industrial technology, the weak current plays an increasingly important role in all fields of life. In order to facilitate the user to carry, the study of contactless weak current measurement technology is also emerging. This article’s design idea is based on two-dimensional reluctance sensor device built non-contact weak current detection system. The system uses the reluctance sensor HMC1002 to collect the current signal and the temperature sensor DS18B20 to compensate the temperature. The signals collected by the reluctance sensor and the temperature sensor are extremely weak. After being amplified by the amplifying circuit, the signal is conducive to subsequent detection and processing. Filter circuit can filter out interference signals to achieve the goal of improving accuracy. After the corresponding algorithm of the microcontroller will convert the signal voltage, easy to read and store, thus designing a non-contact current measurement capable of detecting weak currents and achieving higher accuracy.
文摘特高压直流GIL运行可靠性取决于内绝缘设计的可靠性。此外,导电元件直流电流密度的取值、弹簧触头的定位设计、GIL各元件中的绝缘件与金具连接处的楔形气隙的处理以及母线中支撑件的结构设计细节,都会对产品运行可靠性产生重大影响,不能忽视。对于运行环境十分严酷的UHV DC GIL为保证内绝缘工作可靠性和减少气体维护工作量,文中还提出了高气密性结构设计。为适应-50℃低温运行要求,产品选用了液化温度很低的N_(2)/SF_(6)混合气体,对两种气体的配比,压力特性和绝缘特性进行了讨论与计算。还有产品的局放、气体密度及微水含量的监视系统的可靠性设计,都会对产品运行可靠性产生直接影响。文中对上述问题的研究成果作了介绍,可供高压直流产品设计使用。对其中未解的新技术如基于冷镜露点测试原理、微机电技术制作的智能气体湿度和密度监测装置、高压直流复合绝缘套管伞面局放起始场强提出了研究方案。文中提出的诸多GIL运行可靠性设计要点,对于其他超/特高压直流气体绝缘电器可参考选用。
