Supposition of graphene stacks to estimate the contact resistance and conductivity of nanocomposites

In this study,the effects of stacked nanosheets and the surrounding interphase zone on the resistance of the contact region between nanosheets and the tunneling conductivity of samples are evaluated with developed equations superior to those previously reported.The contact resistance and nanocomposite conductivity are modeled by several influencing factors,including stack properties,interphase depth,tunneling size,and contact diameter.The developed model's accuracy is verified through numerous experimental measurements.To further validate the models and establish correlations between parameters,the effects of all the variables on contact resistance and nanocomposite conductivity are analyzed.Notably,the contact resistance is primarily dependent on the polymer tunnel resistivity,contact area,and tunneling size.The dimensions of the graphene nanosheets significantly influence the conductivity,which ranges from 0 S/m to90 S/m.An increased number of nanosheets in stacks and a larger gap between them enhance the nanocomposite's conductivity.Furthermore,the thicker interphase and smaller tunneling size can lead to higher sample conductivity due to their optimistic effects on the percolation threshold and network efficacy.

AHFO-based soil water content sensing technology considering soil-sensor thermal contact resistance

The actively heated fiber-optic(AHFO)technology has become emerged as a research focus due to its advantages of distributed,real-time measurement and good durability.These attributes have led to the gradual application of AHFO technology to the water content measurement of in situ soil.However,all existing in situ applications of AHFO technology fail to consider the effect of soilesensor contact quality on water content measurements,limiting potential for the wider application of AHFO technology.To address this issue,the authors propose a method for determining the soilesensor thermal contact resistance based on the principle of an infinite cylindrical heat source.This is then used to establish an AHFO water content measurement technology that considers the thermal contact resistance.The reliability and validity of the new measurement technology are explored through a laboratory test and a field case study,and the spatial-temporal evolution of the soil water content in the case is revealed.The results demonstrate that method for determining the soilesensor thermal contact resistance is highly effective and applicable to all types of soils.This method requires only the moisture content,dry density,and thermal response of the in situ soil to be obtained.In the field case,the measurement error of soil water content between the AHFO method,which takes into account the thermal contact resistance,and the neutron scattering method is only 0.011.The water content of in situ soil exhibits a seasonal variation,with an increase in spring and autumn and a decrease in summer and winter.Furthermore,the response of shallow soils to precipitation and evaporation is significant.These findings contribute to the enhancement of the accuracy of the AHFO technology in the measurement of the water content of in situ soils,thereby facilitating the dissemination and utilization of this technology.

Low-resistance Ohmic contact for GaN-based laser diodes

Low-resistance Ohmic contact is critical for the high efficiency GaN-based laser diodes.This study investigates the introduction of the In_(0.15)Ga_(0.85)N contact layer on the specific contact resistance.Experimental results reveal that adopting the In0.15Ga0.85N contact layer yields a minimized specific contact resistance of 2.57×10^(-5)Ω·cm^(2) which is two orders of magnitude lower than the GaN contact layer(7.61×10^(-3)Ω·cm^(2)).A decrease in the specific contact resistance arises from the reduction of the barrier between the metal and p-type In0.15Ga0.85N.To develop an optimal metal electrode combination on the In0.15Ga0.85N contact layer,the Pd/Au and Ni/Au electrode stacks which are most commonly used in the formation of Ohmic contact with p-GaN are investigated.Metal stack of 10/30 nm Pd/Au is demonstrated effective in reducing the specific contact resistance to 10^(-5)Ω·cm^(2) level.The mechanism of the variation of the specific contact resistance under different annealing atmospheres is explained by auger electron spectroscopy.

Fabrication of n^+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide

Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM （transfer length method） test patterns with polysilicon structure are formed on n-wells created by phosphorus ion （P^＋） implantation into a Si-faced p-type 4H-SiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition （LPCVD） and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□. The specific contact resistance pc of n^＋ polysilicon contact to n-type 4H-SiC as low as 3.82 × 10^-5Ω· cm^2 is achieved. The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4.9kΩ/□. The mechanisms for n^＋ polysilicon ohmic contact to n-type SiC are discussed.

Evolution of the electrical contact of dynamic pantograph–catenary system

A good contact between the pantograph and catenary is critically important for the working reliability of electric trains, while the basic understanding on the electrical contact evolution during the pantograph--catenary system working is still ambiguous so far. In this paper, the evolution of electric contact was studied in respects of the contact resistance, temperature rise, and microstructure variation, based on a home-made pantograph-catenary simulation system. Pure carbon strips and copper alloy contact wires were used, and the experimental electrical current, sliding speed, and normal force were set as 80 A, 30 km/h, and 80 N, respectively. The contact resistance presented a fluctuation without obvious regularity, concentrating in the region of 25 and 50 mf~. Temperature rise of the contact point experienced a fast increase at the first several minutes and finally reached a steady state. The surface damage of carbon trips in microstructure analysis revealed a complicated interaction of the sliding friction, joule heating, and arc erosion.

Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p^(+)-GaN contacting layers

Specific contact resistance to p-GaN was measured for various structures of Ni/Pd-based metals and thin(20-30 nm thick)p-InGaN/p^(+)-GaN contacting layers.The effects of surface chemical treatment and annealing temperature were ex-amined.The optimal annealing temperature was determined to be 550°C,above which the sheet resistance of the samples de-graded considerably,suggesting that undesirable alloying had occurred.Pd-containing metal showed~35%lower com-pared to that of single Ni.Very thin(2-3.5 nm thick)p-InGaN contacting layers grown on 20-25 nm thick p^(+)-GaN layers exhib-ited one to two orders of magnitude smaller values of compared to that of p^(+)-GaN without p-InGaN.The current density de-pendence of,which is indicative of nonlinearity in current-voltage relation,was also examined.The lowest achieved through this study was 4.9×10^(-5)Ω·cm^(2)@J=3.4 kA/cm^(2).

Analysis of sliding electric contact characteristics in augmented railgun based on the combination of contact resistance and sliding friction coefficient

The contact resistance between the armature and rails is an important indicator of the contact characteristics in electromagnetic launches.As the contact resistance depends not only on the contact state but also on the contact stress and temperature,there are some limitations in analyzing the contact characteristics using only the contact resistance.In this paper,the contact characteristics of the augmented railgun are analyzed by the combination of contact resistance and sliding friction coefficient.Firstly,the theoretical calculation model of the contact resistance and friction coefficient of the augmented electromagnetic railgun is established.Then the contact resistance and friction coefficient are calculated by the measured values of the muzzle voltage,rail current and armature displacement.Finally,the contact characteristics are analyzed according to the features of the waveforms of the contact resistance and the friction coefficient,and the analysis conclusions are verified by experimental rail images.The results showed that:the aluminum melt film gradually formed on the contact surface reduces the contact resistance and the friction coefficient;the wear and erosion of the armature cause deterioration of the contact state;after the transition,the reliability of the sliding contact between the armature and rails decreases,resulting in an increase in contact resistance.

Modeling and application of thermal contact resistance of ball screws

Aiming at determining the thermal contact resistance of ball screws,a new analytical method combining the minimum excess principle with the MB fractal theory is proposed to estimate thermal contact resistance of ball screws considering microscopic fractal characteristics of contact surfaces.The minimum excess principle is employed for normal stress analysis.Moreover,the MB fractal theory is adopted for thermal contact resistance.The effectiveness of the proposed method is validated by self-designed experiment.The comparison between theoretical and experimental results demonstrates that thermal contact resistance of ball screws can be obtained by the proposed method.On this basis,effects of fractal parameters on thermal contact resistance of ball screws are discussed.Moreover,effects of the axial load on thermal contact resistance of ball screws are also analyzed.The conclusion can be drawn that the thermal contact resistance decreases along with the fractal dimension D increase and it increases along with the scale parameter G increase,and thermal contact resistance of ball screws is retained almost constant along with axial load increase before the preload of the right nut turns into zero in value.The application of the proposed method is also conducted and validated by the temperature measurement on a self-designed test bed.

Toward High Carrier Mobility and Low Contact Resistance:Laser Cleaning of PMMA Residues on Graphene Surfaces

Poly(methyl methacrylate)(PMMA) is widely used for graphene transfer and device fabrication.However,it inevitably leaves a thin layer of polymer residues after acetone rinsing and leads to dramatic degradation of device performance.How to eliminate contamination and restore clean surfaces of graphene is still highly demanded.In this paper,we present a reliable and position-controllable method to remove the polymer residues on graphene films by laser exposure.Under proper laser conditions,PMMA residues can be substantially reduced without introducing defects to the underlying graphene.Furthermore,by applying this laser cleaning technique to the channel and contacts of graphene fieldeffect transistors(GFETs),higher carrier mobility as well as lower contact resistance can be realized.This work opens a way for probing intrinsic properties of contaminant-free graphene and fabricating high-performance GFETs with both clean channel and intimate graphene/metal contact.

Influence of thermal contact resistance on dynamic response of bilayered saturated porous strata

Porous materials can be found in a variety of geophysical and engineering applications.The existence of thermal contact resistance at the interface between bilayered saturated porous strata would result in a significant temperature difference at the interface.An attempt is made to study the thermo-hydro-mechanical coupling dynamic response of bilayered saturated porous strata with thermal contact resistance and elastic wave impedance.The corresponding analytical solutions for the dynamic response of bilayered saturated porous strata under a harmonic thermal load are derived by the operator decomposition method,and their rationality is verified by comparing them with existing solutions.The influences of thermal contact resistance,thermal conductivity ratio,and porosity ratio on the dynamic response of bilayered saturated porous strata are systematically investigated.Outcomes disclose that with the increase of thermal contact resistance,the displacement,pore water pressure and stress decrease gradually,and the temperature jump at the interface between two saturated porous strata increases.

Effect of contact thermal resistance on temperature distributions of concrete-filled steel tubes in fire

To predicate the temperature distribution of concrete-filled steel tubes(CFSTs) being exposure to fire,a finite element analysis model was developed using a finite element package,ANSYS.A suggested value of contact thermal resistance was therefore proposed with the supporting of massive numbers of collected test data.Parametric analysis was conducted subsequently towards the cross-sectional temperature distribution of CFST columns in four-side fire,in which the exposure time,width of the cross section,steel ratio were taken into account with considering contact thermal resistance.It was found that contact thermal resistance has little effect on the overall temperature regulation with the exposure time,the width of cross-section or the change of steel ratio.However,great temperature dropping at the concrete adjacent to the contact interface,and gentle temperature increase at steel tube,exist if considering contact thermal resistance.The results of the study are expected to provide theoretical basis for the fire resistance behavior and design of the CFST columns being exposure to fire.

Experimental investigation of high temperature thermal contact resistance with interface material

Thermal contact resistance plays a very important role in heat transfer efficiency and thermomechanical coupling response between two materials,and a common method to reduce the thermal contact resistance is to fill a soft interface material between these two materials.A testing system of high temperature thermal contact resistance based on INSTRON 8874 is established in the present paper,which can achieve 600 C at the interface.Based on this system,the thermal contact resistance between superalloy GH600 material and three-dimensional braid C/C composite material is experimentally investigated,under different interface pressures,interface roughnesses and temperatures,respectively.At the same time,the mechanism of reducing the thermal contact resistance with carbon fiber sheet as interface material is experimentally investigated.Results show that the present testing system is feasible in the experimental research of high temperature thermal contact resistance.

Influence of the ambient air temperature on the electrical contact reliability of electromagnetic relay

The dynamic contact resistances of HH52P electromagnetic relays are measured under different ambient air tem- perature. Their diagnostic parameters are extracted and determined. It is found that the ambient air temperature obviously influ- ences some parameters. In order to research its influence on the electrical contact reliability of electromagnetic relay, the statistic analysis is applied to study the static contact resistance, the max of the dynamic contact resistance and the bounce time. It is found that the ambient air temperature regularly influences the three parameters. Thoroughly, the phenomenon is studied and analyzed in the point of material science so as to probe into the essential matter of it.

Ti-Al based ohmic contacts to n-type 6H-SiC with ion implantation

The Ti-Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM （transfer length method） test patterns with Au/Ti/A1/Ti/SiC structure is formed on N-wells created by P^＋ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance pc as low as 8.64×10-6Ω·cm^2 is achieved after annealing in N2 at 900℃ for 5min. The sheet resistance Rsh of the implanted layers is 975Ω. X-ray diffraction （XRD） analysis shows the formation of Ti3SiC2 at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.

Ohmic contact properties of p-type surface conductive layer on H-terminated diamond films prepared by DC arc jet CVD

With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current （DC） arc jet chemical vapor deposition （CVD） are considered to be one of the most promising materials for high-frequency and high-power electronic devices. In this paper, high-quality self-standing polycrystalline diamond films with the diameter of 100 mm were prepared by DC arc jet CVD, and then, the p-type surface conductive layer with the sheet carrier density of 10^11-10^13 cm-2 on the H-terminated diamond film was obtained by micro-wave hydrogen plasma treatment for 40 min. Ti/Au and Au films were deposited on the H-terminated diamond surface as the ohmic contact electrode, respectively, afterwards, they were treated by rapid vacuum annealing at different temperatures. The properties of these two types of ohmic contacts were investigated by measuring the specific contact resistance using the transmission line method （TLM）. Due to the formation of Ti-related carbide at high temperature, the specific contact resistance of Ti/Au contact gradually decreases to 9.95 × 10^-5 Ω-cm2 as the temperature increases to 820℃. However, when the annealing temperature reaches 850℃, the ohmic contact for Ti/Au is degraded significantly due to the strong diffusion and reaction between Ti and Au. As for the as-deposited Au contact, it shows an ohmic contact. After annealing treatment at 550℃, low specific contact resistance was detected for Au contact, which is derived from the enhancement of interdiffusion between Au and diamond films.

Analysis of the Correlation between the Level of Contact Degradation and the Dynamic Resistance Curve in Circuit Breakers

The DRM （dynamic contact resistance measurement） in high voltage circuit breakers is a manner of evaluating the internal ageing condition of the chamber. DRM is similar to static contact resistance measurement testing, but instead of measuring a single value when the breaker contacts are closed （static value）, the ohmic resistance is measured at various contact positions, from the beginning of the contact opening until a complete separation of the contacts. The relationship between the contact resistances of the new circuit breaker and the ageing circuit breaker in operation provides subsidy for the evaluation of both the main and arcing contact conditions. This research aims to analyze the correlation between the various levels of degradation of the contacts and the configuration of the DRM curve. This work considers curve samples from new acceleration tests. breaker chamber contacts and different levels of degradation by

A Genetic Algorithm for Simultaneous Determination of Thin Films Thermal Transport Properties and Contact Resistance

A genetic algorithm （GA） was studied to simultaneously determine the thermal transport properties and the contact resistance of thin films deposited on a thick substrate. A pulsed photothermal reflectance （PPR） system was employed for the measurements. The GA was used to extract the thermal properties. Measurements were performed on SiO2 thin films of different thicknesses on silicon substrate. The results show that the GA accompanied with the PPR system is useful for the simultaneous determination of thermal properties of thin films on a substrate.

Nondestructive measurement of thermal contact resistance for the power vertical double-diffused metal-oxide-semiconductor

To obtain thermal contact resistance（TCR） between the vertical double-diffused metal-oxide-semiconductor（VDMOS） and the heat sink, we derived the relationship between the total thermal resistance and the contact force imposed on the VDMOS. The total thermal resistance from the chip to the heat sink is measured under different contact forces, and the TCR can be extracted nondestructively from the derived relationship. Finally, the experimental results are compared with the simulation results.

Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing

Carbon-doped In Ga As Bi films on In P:Fe(100)substrates have been grown by gas source molecular beam epitaxy(GSMBE).The electrical properties and non-alloyed Ti/Pt/Au contact resistance of n-type carbon-doped In Ga As Bi films were characterized by Van der Pauw-Hall measurement and transmission line method(TLM)with and without rapid thermal annealing(RTA).It was found that the specific contact resistance decreases gradually with the increase of carrier concentration.The electron concentration exhibits a sharp increase,and the specific contact resistance shows a noticeable reduction after RTA.With RTA,the In Ga As Bi film grown under CBr4 supply pressure of 0.18 Torr exhibited a high electron concentration of 1.6×10^(21) cm^(-3) and achieved an ultra-low specific contact resistance of 1×10^(-8)Ω·cm^(2),revealing that contact resistance depends greatly on the tunneling effect.

Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C–SiC

The 3C-SiC thin films used herein are grown on Si substrates by chemical vapor deposition. A1 contacts with differ- ent thickness values are deposited on the 3C-SiC/Si （100） structure by the magnetron sputtering method and are annealed at different temperatures. We focus on the effects of the annealing temperature on the ohmic contact properties and mi- crostructure of A1/3C-SiC structure. The electrical properties of A1 contacts to n-type 3C-SiC are characterized by the transmission line method. The crystal structures and chemical phases of A1 contacts are examined by X-ray diffraction, Raman spectra, and transmission electron microscopy, respectively. It is found that the A1 contacts exhibit ohmic contact behaviors when the annealing temperature is below 550 ℃, and they become Schottky contacts when the annealing tem- perature is above 650 ℃. A minimum specific contact resistance of 1.8 × 10-4 Ω cm2 is obtained when the A1 contact is annealed at 250 ℃.