Carbon Supported MoO_(2) Spheres Boosting Ultra-Stable Lithium Storage with High Volumetric Density

As important ingredients in lithium-ion battery,the Coulombic efficiency and power density greatly impact the electrochemical performances.Although recent literatures have reported nano-porous materials to enhance the specific capacities,intrinsic drawbacks such as poor initial Coulombic efficiency and low volumetric capacity could not be avoided.Herein,we propose a strategy to prepare carbon supported MoO_(2)spheres used for lithium-ion battery with high volumetric capacity density.A high initial Coulombic efficiency of 76.5%is obtained due to limited solid electrolyte interface film formed on the exposed surface.Meantime,the sample with an optimal carbon content and a proper structural strength reveals a higher reversible capacity of 956 mA h g^(-1)than the theoretical capacity of crystalline Mo O_(2)(838 mA h g^(-1))and a high capacity retention ratio of 96.4%after 100 cycles at 0.5 A g^(-1).And an effective compaction capacity density(under 5 MPa)of 670 mA h cm^(-3)of the spheres proves its potential value in practical applications.

Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In_(0.82)Ga_(0.18)As buffer layer

Microstructure and misfit dislocation behavior in In_xGa_(1-x)As/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition(LP-MOCVD) were analyzed by high resolution transmission electron microscopy(HRTEM), scanning electron microscopy(SEM), atomic force microscopy(AFM), Raman spectroscopy and Hall effect measurements. To optimize the structure of In_(0.82)Ga_(0.18)As/InP heterostructure, the In_xGa_(1-x)As buffer layer was grown. The residual strain of the In_(0.82)Ga_(0.18)As epitaxial layer was calculated. Further, the periodic growth pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium(In) content In_(0.82)Ga_(0.18)As epitaxial layer has significant influence on the carrier concentration.