The chemical mechanical polishing/planarization（CMP） performance of an inhibitor-free alkaline copper slurry is investigated.The results of the Cu dissolution rate（DR） and the polish rate（PR） show that the alkal...The chemical mechanical polishing/planarization（CMP） performance of an inhibitor-free alkaline copper slurry is investigated.The results of the Cu dissolution rate（DR） and the polish rate（PR） show that the alkaline slurry without inhibitors has a relatively high copper removal rate and considerable dissolution rate.Although the slurry with inhibitors has a somewhat low DR,the copper removal rate was significantly reduced due to the addition of inhibitors（Benzotriazole,BTA）.The results obtained from pattern wafers show that the alkaline slurry without inhibitors has a better planarization efficacy;it can planarize the uneven patterned surface during the excess copper removal.These results indicate that the proposed inhibitor-free copper slurry has a considerable planarization capability for CMP of Cu pattern wafers,it can be applied in the first step of Cu CMP for copper bulk removal.展开更多
The planarization mechanism of alkaline copper slurry is studied in the chemical mechanical polishing （CMP） process from the perspective of chemical mechanical kinetics.Different from the international dominant acid...The planarization mechanism of alkaline copper slurry is studied in the chemical mechanical polishing （CMP） process from the perspective of chemical mechanical kinetics.Different from the international dominant acidic copper slurry,the copper slurry used in this research adopted the way of alkaline technology based on complexation. According to the passivation property of copper in alkaline conditions,the protection of copper film at the concave position on a copper pattern wafer surface can be achieved without the corrosion inhibitors such as benzotriazole（BTA）,by which the problems caused by BTA can be avoided.Through the experiments and theories research,the chemical mechanical kinetics theory of copper removal in alkaline CMP conditions was proposed. Based on the chemical mechanical kinetics theory,the planarization mechanism of alkaline copper slurry was established. In alkaline CMP conditions,the complexation reaction between chelating agent and copper ions needs to break through the reaction barrier.The kinetic energy at the concave position should be lower than the complexation reaction barrier,which is the key to achieve planarization.展开更多
基金supported by the Major National Science and Technology Special Projects,China(No.2009ZX02308)the Tianjin Natural Science Foundation of China(No.lOJCZDJC 15500)+1 种基金the National Natural Science Foundation of China(No.10676008)the Fund Project of Hebei Provincial Department of Education,China(No.2011128)
文摘The chemical mechanical polishing/planarization（CMP） performance of an inhibitor-free alkaline copper slurry is investigated.The results of the Cu dissolution rate（DR） and the polish rate（PR） show that the alkaline slurry without inhibitors has a relatively high copper removal rate and considerable dissolution rate.Although the slurry with inhibitors has a somewhat low DR,the copper removal rate was significantly reduced due to the addition of inhibitors（Benzotriazole,BTA）.The results obtained from pattern wafers show that the alkaline slurry without inhibitors has a better planarization efficacy;it can planarize the uneven patterned surface during the excess copper removal.These results indicate that the proposed inhibitor-free copper slurry has a considerable planarization capability for CMP of Cu pattern wafers,it can be applied in the first step of Cu CMP for copper bulk removal.
基金supported by the Special Project Items No.2 in National Long-term Technology Development Plan,China(No.2009ZX02308)
文摘The planarization mechanism of alkaline copper slurry is studied in the chemical mechanical polishing （CMP） process from the perspective of chemical mechanical kinetics.Different from the international dominant acidic copper slurry,the copper slurry used in this research adopted the way of alkaline technology based on complexation. According to the passivation property of copper in alkaline conditions,the protection of copper film at the concave position on a copper pattern wafer surface can be achieved without the corrosion inhibitors such as benzotriazole（BTA）,by which the problems caused by BTA can be avoided.Through the experiments and theories research,the chemical mechanical kinetics theory of copper removal in alkaline CMP conditions was proposed. Based on the chemical mechanical kinetics theory,the planarization mechanism of alkaline copper slurry was established. In alkaline CMP conditions,the complexation reaction between chelating agent and copper ions needs to break through the reaction barrier.The kinetic energy at the concave position should be lower than the complexation reaction barrier,which is the key to achieve planarization.
