The ultrasonic wedge bonding with d25 μm copper wire was achieved on Au/Ni plated Cu substrate at ambient temperature.Ultrasonic wedge bonding mechanism was investigated by using SEM/EDX,pull test,shear test and micr...The ultrasonic wedge bonding with d25 μm copper wire was achieved on Au/Ni plated Cu substrate at ambient temperature.Ultrasonic wedge bonding mechanism was investigated by using SEM/EDX,pull test,shear test and microhardness test.The results show that the thinning of the Au layer occurs directly below the center of the bonding tool with the bonding power increasing.The interdiffusion between copper wire and Au metallization during the wedge bonding is assumed negligible,and the wedge bonding is achieved by wear action induced by ultrasonic vibration.The ultrasonic power contributes to enhance the deformation of copper wire due to ultrasonic softening effect which is then followed by the strain hardening of the copper wedge bonding.展开更多
Copper wire, serving as a cost-saving alternative to gold wire, has been used in many high-end thermosonic ball bonding applications. In this paper, the bond shear force, bond shear strength, and the ball bond diamete...Copper wire, serving as a cost-saving alternative to gold wire, has been used in many high-end thermosonic ball bonding applications. In this paper, the bond shear force, bond shear strength, and the ball bond diameter are adopted to evaluate the bonding quality. It is concluded that the ef/~cient ultrasonic power is needed to soften the ball to form the copper bonds with high bonding strength. However, excessive ultrasonic power would serve as a fatigue loading to weaken the bonding. Excessive or less bonding force would cause cratering in the silicon.展开更多
Wire bonding is one of the main processes of the LED packaging which provides electrical interconnec- tion between the LED chip and lead frame. The gold wire bonding process has been widely used in LED packaging indus...Wire bonding is one of the main processes of the LED packaging which provides electrical interconnec- tion between the LED chip and lead frame. The gold wire bonding process has been widely used in LED packaging industry currently. However, due to the high cost of gold wire, copper wire bonding is a good substitute for the gold wire bonding which can lead to significant cost saving. In this paper, the copper and gold wire bonding processes on the high power LED chip are compared and analyzed with finite element simulation. This modeling work may provide guidelines for the parameter optimization of copper wire bonding process on the high power LED packaging.展开更多
基金Prpject(E052104/50705021)supported by the National Natural Science Foundation of ChinaProject(2006:01504489)supported by the Development Program for Outstanding Young Teachers in HIT
文摘The ultrasonic wedge bonding with d25 μm copper wire was achieved on Au/Ni plated Cu substrate at ambient temperature.Ultrasonic wedge bonding mechanism was investigated by using SEM/EDX,pull test,shear test and microhardness test.The results show that the thinning of the Au layer occurs directly below the center of the bonding tool with the bonding power increasing.The interdiffusion between copper wire and Au metallization during the wedge bonding is assumed negligible,and the wedge bonding is achieved by wear action induced by ultrasonic vibration.The ultrasonic power contributes to enhance the deformation of copper wire due to ultrasonic softening effect which is then followed by the strain hardening of the copper wedge bonding.
文摘Copper wire, serving as a cost-saving alternative to gold wire, has been used in many high-end thermosonic ball bonding applications. In this paper, the bond shear force, bond shear strength, and the ball bond diameter are adopted to evaluate the bonding quality. It is concluded that the ef/~cient ultrasonic power is needed to soften the ball to form the copper bonds with high bonding strength. However, excessive ultrasonic power would serve as a fatigue loading to weaken the bonding. Excessive or less bonding force would cause cratering in the silicon.
基金Project supported by the National Natural Science Foundation of China(Nos.50876038,50835005)the National High Technology Research and Development Program of China(No.2009AA03A1A3)
文摘Wire bonding is one of the main processes of the LED packaging which provides electrical interconnec- tion between the LED chip and lead frame. The gold wire bonding process has been widely used in LED packaging industry currently. However, due to the high cost of gold wire, copper wire bonding is a good substitute for the gold wire bonding which can lead to significant cost saving. In this paper, the copper and gold wire bonding processes on the high power LED chip are compared and analyzed with finite element simulation. This modeling work may provide guidelines for the parameter optimization of copper wire bonding process on the high power LED packaging.
