An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect bra...An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect branch and a substrate lateral coupling branch. The parameter extraction is based on an improved characteristic function approach and vector fitting method. The model has better simulation than the previous work over the measured data of 2.5r and 4.5r on-chip inductors in the GaAs process.展开更多
A small signal coupling model is developed to analyze the coupling between two LNAs. The mutual inductance between the adjacent on-chip inductors is considered responsible for this coupling. A set of formulas have bee...A small signal coupling model is developed to analyze the coupling between two LNAs. The mutual inductance between the adjacent on-chip inductors is considered responsible for this coupling. A set of formulas have been derived to quantitatively predict the coupling effects. Based on our analysis, a quick estimation can be made to see which pair of inductors plays a key role in evaluating the coupling between the LNAs. Source inductors of two LNAs are placed closely while the load inductors are far apart according to the analysis. To validate the proposed theory, two 2 GHz LNAs are fabricated. The LNAs have a peak gain of 18 dB and NF of 1.4 dB. The coupling between the LNAs is –30 dB.展开更多
基金Project supported by the National Natural Science Foundation of China(No.61674036)
文摘An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect branch and a substrate lateral coupling branch. The parameter extraction is based on an improved characteristic function approach and vector fitting method. The model has better simulation than the previous work over the measured data of 2.5r and 4.5r on-chip inductors in the GaAs process.
基金supported by the National Natural Science Foundation of China(No.61401025)
文摘A small signal coupling model is developed to analyze the coupling between two LNAs. The mutual inductance between the adjacent on-chip inductors is considered responsible for this coupling. A set of formulas have been derived to quantitatively predict the coupling effects. Based on our analysis, a quick estimation can be made to see which pair of inductors plays a key role in evaluating the coupling between the LNAs. Source inductors of two LNAs are placed closely while the load inductors are far apart according to the analysis. To validate the proposed theory, two 2 GHz LNAs are fabricated. The LNAs have a peak gain of 18 dB and NF of 1.4 dB. The coupling between the LNAs is –30 dB.
