The reactive crystallization process of dexamethasone sodium phosphate was investigated in a continuous mixed-suspension, mixed-product-removal(MSMPR) crystallizer. Analyzing experimental data, it was found that the g...The reactive crystallization process of dexamethasone sodium phosphate was investigated in a continuous mixed-suspension, mixed-product-removal(MSMPR) crystallizer. Analyzing experimental data, it was found that the growth of product crystal was size-dependent. The Bransom, CR, ASL, M J2 and M J3 size-dependent growth models were discussed in details. Using experimental steady state population density data of dexamethasone sodium phosphate, parameters of five size-dependent growth models were determined by the method of non-linear least-squares. By comparison of experimental population density and linear growth rate data with those obtained from the five size-dependent growth models, it was found that the MJ3 model predicts the growth more accurately than do the other four models. Based on the theory of population balance, the crystal nucleation and growth rate equations of dexamethasone sodium phosphate were determined by non-linear regression method. The effects of different operation parameters such as supersaturation, magma density and temperature on the quality of product crystal were also discussed, and the optimal operation conditions were derived.展开更多
Growth of gallium nitride(GaN)inverted pyramids on c-plane sapphire substrates is benefit for fabricating novel devices as it forms the semipolar facets.In this work,GaN inverted pyramids are directly grown on c-plane...Growth of gallium nitride(GaN)inverted pyramids on c-plane sapphire substrates is benefit for fabricating novel devices as it forms the semipolar facets.In this work,GaN inverted pyramids are directly grown on c-plane patterned sapphire substrates(PSS)by metal organic vapor phase epitaxy(MOVPE).The influences of growth conditions on the surface morphol-ogy are experimentally studied and explained by Wulff constructions.The competition of growth rate among{0001},{1011},and{1122}facets results in the various surface morphologies of GaN.A higher growth temperature of 985 ℃ and a lowerⅤ/Ⅲratio of 25 can expand the area of{}facets in GaN inverted pyramids.On the other hand,GaN inverted pyramids with almost pure{}facets are obtained by using a lower growth temperature of 930℃,a higherⅤ/Ⅲratio of 100,and PSS with pattern arrangement perpendicular to the substrate primary flat.展开更多
Depositional growth of ice crystal is one of the major processes for development of precipitation systems and can be represented by depositional growth of cloud ice from cloud water(P_(IDW)) and depositional growth of...Depositional growth of ice crystal is one of the major processes for development of precipitation systems and can be represented by depositional growth of cloud ice from cloud water(P_(IDW)) and depositional growth of snow from cloud ice(P_(SFI)) in cloud-resolving model. Four parameterization schemes are analyzed in the cloud-resolving model simulations of four rainfall cases over the tropics and midlatitudes. The comparison of time and model domain mean data shows that Shen's scheme produces the closest rainfall simulation to the observation. Compared to Zeng's scheme,Shen's scheme improves the mean rain-rate simulation significantly through the dramatic decrease in depositional growth of cloud ice from cloud water. Compared to other schemes, Shen's scheme produces the better rainfall simulation via the reduction in the mean rain rate associated with the enhanced gain of cloud water and ice.展开更多
In this article, we study the phase-field model of solidification for numerical simulation of dendritic crystal growth that occurs during the casting of metals and alloys. Phase-field model of solidification describes...In this article, we study the phase-field model of solidification for numerical simulation of dendritic crystal growth that occurs during the casting of metals and alloys. Phase-field model of solidification describes the physics of dendritic growth in any material during the process of under cooling. The numerical procedure in this work is based on finite difference scheme for space and the 4th-order Runge-Kutta method for time discretization. The effect of each physical parameter on the shape and growth of dendritic crystal is studied and visualized in detail.展开更多
The stability of the shapes of crystal growth face and dissolution face in a two-dimensional mathematical model of crystal growth from solution under microgravity is studied. It is proved that the stable shapes of cry...The stability of the shapes of crystal growth face and dissolution face in a two-dimensional mathematical model of crystal growth from solution under microgravity is studied. It is proved that the stable shapes of crystal growth face and dissolution face do exist, which are suitably shaped curves with their upper parts inclined backward properly.The stable shapes of crystal growth faces and dissolution faces are calculated for various values of parameters, Ra, Pr and Sc. It is shown that the stronger the convection relative to the diffusion in solution is, the more backward the upperparts of the stable crystal growth face and dissolution face are inclined. The orientation and the shape of dissolution face hardly affect the stable shape of crystal growth face and vice versa.展开更多
The population balance modeling is regarded as a universally accepted mathematical framework for dynamic simulation of various particulate processes, such as crystallization, granulation and polymerization. This artic...The population balance modeling is regarded as a universally accepted mathematical framework for dynamic simulation of various particulate processes, such as crystallization, granulation and polymerization. This article is concerned with the application of the method of characteristics (MOC) for solving population balance models describing batch crystallization process. The growth and nucleation are considered as dominant phenomena, while the breakage and aggregation are neglected. The numerical solutions of such PBEs require high order accuracy due to the occurrence of steep moving fronts and narrow peaks in the solutions. The MOC has been found to be a very effective technique for resolving sharp discontinuities. Different case studies are carried out to analyze the accuracy of proposed algorithm. For validation, the results of MOC are compared with the available analytical solutions and the results of finite volume schemes. The results of MOC were found to be in good agreement with analytical solutions and superior than those obtained by finite volume schemes.展开更多
碳化硅(SiC)电子器件的性能和成本受衬底质量影响,因此生长大直径高品质SiC单晶意义重大。物理气相传输(PVT)法是一种常用的生长方法,但其主要面临热场设计与气流控制问题。本工作对电阻加热PVT法生长150 mm SiC单晶完整过程开展数值仿...碳化硅(SiC)电子器件的性能和成本受衬底质量影响,因此生长大直径高品质SiC单晶意义重大。物理气相传输(PVT)法是一种常用的生长方法,但其主要面临热场设计与气流控制问题。本工作对电阻加热PVT法生长150 mm SiC单晶完整过程开展数值仿真研究,建立描述SiC原料热解和再结晶及其多孔结构演变、热-质输运、晶体形貌变化的数理模型,用数值模拟手段研究晶体生长、原料演变与热场变化等过程间的耦合关系。结果显示:原料区侧面高温导致气流不均匀,晶面呈“W”形,原料区底部高温得到均匀气流和微凸晶面;长晶界面通过径向温度变化调节气相组分平衡压力,使晶面生长成等温线形状;晶体生长速率与原料温度、剩余原料量呈正相关。模拟结果与已报道实验结果吻合,对优化生长SiC单晶有指导意义。展开更多
文摘The reactive crystallization process of dexamethasone sodium phosphate was investigated in a continuous mixed-suspension, mixed-product-removal(MSMPR) crystallizer. Analyzing experimental data, it was found that the growth of product crystal was size-dependent. The Bransom, CR, ASL, M J2 and M J3 size-dependent growth models were discussed in details. Using experimental steady state population density data of dexamethasone sodium phosphate, parameters of five size-dependent growth models were determined by the method of non-linear least-squares. By comparison of experimental population density and linear growth rate data with those obtained from the five size-dependent growth models, it was found that the MJ3 model predicts the growth more accurately than do the other four models. Based on the theory of population balance, the crystal nucleation and growth rate equations of dexamethasone sodium phosphate were determined by non-linear regression method. The effects of different operation parameters such as supersaturation, magma density and temperature on the quality of product crystal were also discussed, and the optimal operation conditions were derived.
基金the National Key Research and Development Program(2021YFA0716400)the National Natural Science Foundation of China(62225405,62350002,61991443)+1 种基金the Key R&D Project of Jiangsu Province,China(BE2020004)the Collaborative Innovation Centre of Solid-State Lighting and Energy-Saving Electronics.
文摘Growth of gallium nitride(GaN)inverted pyramids on c-plane sapphire substrates is benefit for fabricating novel devices as it forms the semipolar facets.In this work,GaN inverted pyramids are directly grown on c-plane patterned sapphire substrates(PSS)by metal organic vapor phase epitaxy(MOVPE).The influences of growth conditions on the surface morphol-ogy are experimentally studied and explained by Wulff constructions.The competition of growth rate among{0001},{1011},and{1122}facets results in the various surface morphologies of GaN.A higher growth temperature of 985 ℃ and a lowerⅤ/Ⅲratio of 25 can expand the area of{}facets in GaN inverted pyramids.On the other hand,GaN inverted pyramids with almost pure{}facets are obtained by using a lower growth temperature of 930℃,a higherⅤ/Ⅲratio of 100,and PSS with pattern arrangement perpendicular to the substrate primary flat.
基金National Natural Science Foundation of China(41475039)National Key Basic Research and Development Project of China(2015CB953601)
文摘Depositional growth of ice crystal is one of the major processes for development of precipitation systems and can be represented by depositional growth of cloud ice from cloud water(P_(IDW)) and depositional growth of snow from cloud ice(P_(SFI)) in cloud-resolving model. Four parameterization schemes are analyzed in the cloud-resolving model simulations of four rainfall cases over the tropics and midlatitudes. The comparison of time and model domain mean data shows that Shen's scheme produces the closest rainfall simulation to the observation. Compared to Zeng's scheme,Shen's scheme improves the mean rain-rate simulation significantly through the dramatic decrease in depositional growth of cloud ice from cloud water. Compared to other schemes, Shen's scheme produces the better rainfall simulation via the reduction in the mean rain rate associated with the enhanced gain of cloud water and ice.
文摘In this article, we study the phase-field model of solidification for numerical simulation of dendritic crystal growth that occurs during the casting of metals and alloys. Phase-field model of solidification describes the physics of dendritic growth in any material during the process of under cooling. The numerical procedure in this work is based on finite difference scheme for space and the 4th-order Runge-Kutta method for time discretization. The effect of each physical parameter on the shape and growth of dendritic crystal is studied and visualized in detail.
文摘The stability of the shapes of crystal growth face and dissolution face in a two-dimensional mathematical model of crystal growth from solution under microgravity is studied. It is proved that the stable shapes of crystal growth face and dissolution face do exist, which are suitably shaped curves with their upper parts inclined backward properly.The stable shapes of crystal growth faces and dissolution faces are calculated for various values of parameters, Ra, Pr and Sc. It is shown that the stronger the convection relative to the diffusion in solution is, the more backward the upperparts of the stable crystal growth face and dissolution face are inclined. The orientation and the shape of dissolution face hardly affect the stable shape of crystal growth face and vice versa.
文摘The population balance modeling is regarded as a universally accepted mathematical framework for dynamic simulation of various particulate processes, such as crystallization, granulation and polymerization. This article is concerned with the application of the method of characteristics (MOC) for solving population balance models describing batch crystallization process. The growth and nucleation are considered as dominant phenomena, while the breakage and aggregation are neglected. The numerical solutions of such PBEs require high order accuracy due to the occurrence of steep moving fronts and narrow peaks in the solutions. The MOC has been found to be a very effective technique for resolving sharp discontinuities. Different case studies are carried out to analyze the accuracy of proposed algorithm. For validation, the results of MOC are compared with the available analytical solutions and the results of finite volume schemes. The results of MOC were found to be in good agreement with analytical solutions and superior than those obtained by finite volume schemes.
文摘碳化硅(SiC)电子器件的性能和成本受衬底质量影响,因此生长大直径高品质SiC单晶意义重大。物理气相传输(PVT)法是一种常用的生长方法,但其主要面临热场设计与气流控制问题。本工作对电阻加热PVT法生长150 mm SiC单晶完整过程开展数值仿真研究,建立描述SiC原料热解和再结晶及其多孔结构演变、热-质输运、晶体形貌变化的数理模型,用数值模拟手段研究晶体生长、原料演变与热场变化等过程间的耦合关系。结果显示:原料区侧面高温导致气流不均匀,晶面呈“W”形,原料区底部高温得到均匀气流和微凸晶面;长晶界面通过径向温度变化调节气相组分平衡压力,使晶面生长成等温线形状;晶体生长速率与原料温度、剩余原料量呈正相关。模拟结果与已报道实验结果吻合,对优化生长SiC单晶有指导意义。
