Subject Code:A04 Supported by the National Natural Science Foundation of China,a research group from Wuhan University,led by Profs.Liu Zhengyou(刘正猷)and Qiu Chunyin(邱春印),demonstrated the topological valley transp...Subject Code:A04 Supported by the National Natural Science Foundation of China,a research group from Wuhan University,led by Profs.Liu Zhengyou(刘正猷)and Qiu Chunyin(邱春印),demonstrated the topological valley transport of sound in sonic crystals,which was published in Nature Physics(2017,13:369—374).展开更多
Lead iodide single crystal was grown by physical vapor transport method.Two radiation detectors with different configurations were fabricated from the as-grown crystal.The electrical and y-ray response properties at r...Lead iodide single crystal was grown by physical vapor transport method.Two radiation detectors with different configurations were fabricated from the as-grown crystal.The electrical and y-ray response properties at room temperature of the both detectors were investigated.It is found that the dark resistivity of the detectors are respectively 3×10^（10）Ω·cm for bias electric field parallel to crystal c-axis（E//c） and 2×10~8Ω·cm for perpendicular to crystal c-axis（E⊥c）.The energy spectrum response measurement shows that both detectors were sensitive to ^（241） Am 59.5 keVγ-rays,and achieved a good energy resolution of 16.8%for the E⊥c-axis configuration detector with a full width at half maximum of 9.996 keV.展开更多
Zinc oxide（ZnO） has a wide band gap, high stability and a high thermal operating range that makes it a suitable material as a semiconductor for fabricating light emitting diodes（LEDs） and laser diodes, photodiodes...Zinc oxide（ZnO） has a wide band gap, high stability and a high thermal operating range that makes it a suitable material as a semiconductor for fabricating light emitting diodes（LEDs） and laser diodes, photodiodes, power diodes and other semiconductor devices. Recently, a new crystal growth for producing ZnO crystal boules was developed, which was physical vapor transport（PVT）, at temperatures exceeding 1500 ？C under a certain system pressure. ZnO crystal wafers in sizes up to 50 mm in diameter were produced. The conditions of ZnO crystal growth, growth rate and the quality of ZnO crystal were analyzed. Results from crystal growth and material characterization are presented and discussed. Our research results suggest that the novel crystal growth technique is a viable production technique for producing ZnO crystals and substrates for semiconductor device applications.展开更多
文摘Subject Code:A04 Supported by the National Natural Science Foundation of China,a research group from Wuhan University,led by Profs.Liu Zhengyou(刘正猷)and Qiu Chunyin(邱春印),demonstrated the topological valley transport of sound in sonic crystals,which was published in Nature Physics(2017,13:369—374).
基金Project supported by the National Natural Science Foundation of China(No.50902012)the Natural Science Foundation of Sichuan Province,China(No.2009JY0087)
文摘Lead iodide single crystal was grown by physical vapor transport method.Two radiation detectors with different configurations were fabricated from the as-grown crystal.The electrical and y-ray response properties at room temperature of the both detectors were investigated.It is found that the dark resistivity of the detectors are respectively 3×10^（10）Ω·cm for bias electric field parallel to crystal c-axis（E//c） and 2×10~8Ω·cm for perpendicular to crystal c-axis（E⊥c）.The energy spectrum response measurement shows that both detectors were sensitive to ^（241） Am 59.5 keVγ-rays,and achieved a good energy resolution of 16.8%for the E⊥c-axis configuration detector with a full width at half maximum of 9.996 keV.
基金Project supported by the Special Scientific Research Plan Project of Shaanxi Provincial Education Department,China(No.08JK376)
文摘Zinc oxide（ZnO） has a wide band gap, high stability and a high thermal operating range that makes it a suitable material as a semiconductor for fabricating light emitting diodes（LEDs） and laser diodes, photodiodes, power diodes and other semiconductor devices. Recently, a new crystal growth for producing ZnO crystal boules was developed, which was physical vapor transport（PVT）, at temperatures exceeding 1500 ？C under a certain system pressure. ZnO crystal wafers in sizes up to 50 mm in diameter were produced. The conditions of ZnO crystal growth, growth rate and the quality of ZnO crystal were analyzed. Results from crystal growth and material characterization are presented and discussed. Our research results suggest that the novel crystal growth technique is a viable production technique for producing ZnO crystals and substrates for semiconductor device applications.
