期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
Anisotropic corrosion behavior of hot-rolled Mg-8 wt.%Li alloy 被引量:9
1
作者 Baojie Wang Kai Xu +3 位作者 Daokui Xu Xiang Cai Yanxin Qiao Liyuan Sheng 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2020年第18期102-111,共10页
By performing the immersion,hydrogen evolution and electrochemical corrosion testing in a 0.1 mol/L NaCl solution,the corrosion performance of differently oriented samples cut from an as-rolled Mg-8wt.%Li alloy plate ... By performing the immersion,hydrogen evolution and electrochemical corrosion testing in a 0.1 mol/L NaCl solution,the corrosion performance of differently oriented samples cut from an as-rolled Mg-8wt.%Li alloy plate has been investigated and compared.It demonstrated that obvious anisotropy in corrosion resistance existed between the sample surfaces with different orientations.Among them,the corrosion rate of"ND"(the normal direction)samples with their surfaces perpendicular to the normal direction of the plate was the highest.The corrosion rate of"TD"(the transverse direction)samples with their surfaces perpendicular to the transverse direction of the plate took the second place.For the"RD"(the rolling direction)samples with their surfaces perpendicular to the rolling direction of the plate,they had the lowest corrosion rate.For all the samples,their corrosion performance and the pitting severity were mainly ascribed to the crystallographic texture ofα-Mg matrix phases because the formed surface films onβ-Li phases could provide good protection to the substrate.For the"ND"and"TD"samples,the exposed surfaces were composed of{0002},{1010}and{1120}planes ofα-Mg phases and subsequently resulted in their severe corrosion attack due to the corrosion couples between basal and prism planes.Since the crystallographic planes of exposedα-Mg phases on the surfaces of"RD"samples were mainly{1010}and{1120}prism planes,the pitting severity was the weakest. 展开更多
关键词 Mg-Li alloys Texture Anisotropic corrosion PITTING crystallographic plane
原文传递
Selective Growth of GaN on Slope Cone-shaped Patterned Sapphire Substrate
2
作者 YANG Dechao LIANG Hongwei +8 位作者 QIU Yu LI Pengchong LIU Yang SHEN Rensheng XIA Xiaochuan YU Zhennan CHANG Yuchun ZHANG Yuantao DU Guotong 《Chemical Research in Chinese Universities》 SCIE CAS CSCD 2014年第4期556-559,共4页
Cone-shaped patterned sapphire substrate was prepared by inductively coupled plasma etching and GaN nucleation layer was grown on it by metal-organic chemical vapor deposition.A selective growth of GaN nucleation laye... Cone-shaped patterned sapphire substrate was prepared by inductively coupled plasma etching and GaN nucleation layer was grown on it by metal-organic chemical vapor deposition.A selective growth of GaN nucleation layer was found on the slope of the cone-shaped patterned sapphire substrat,and the distribution morphology of GaN had significantly changed after it was recrystallized.GaN selective growth and redistribution were analyzed by investigating the distribution of crystallographic planes on the cone surface and the atom array of specific planes at atom level. 展开更多
关键词 Patterned sapphire substrate GAN Selective growth crystallographic plane
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部