The design process in power electronics is driven by increased utilisation level of the used components to gain performance whilst keeping cost low. This article provides an overview on challenges in low-voltage high-...The design process in power electronics is driven by increased utilisation level of the used components to gain performance whilst keeping cost low. This article provides an overview on challenges in low-voltage high-current systems, e.g. used in automotive applications. The main content points are： topology selection--single systems vs. cascaded systems, PCB manufacturing technology overview, current measurement methods, bulk capacitor design （ceramic DC link） and PCB design instructions for high-current systems. The PCB design instructions target on optimised thermal design for maximised PCB utilisation and on optimised track design for a low inductance DC link interconnection. The paper bases on calculations, measurements and simulations.展开更多
A thick SOI LIGBT structure with a combination of uniform and variation in lateral doping profiles （UVLD） on partial membrane （UVLD PM LIGBT） is proposed. The silicon substrate under the drift region is selectivel...A thick SOI LIGBT structure with a combination of uniform and variation in lateral doping profiles （UVLD） on partial membrane （UVLD PM LIGBT） is proposed. The silicon substrate under the drift region is selectively etched to remove the charge beneath the buried oxide so that the potential lines can release below the membrane, resulting in an enhanced breakdown voltage. Moreover, the thick SOI LIGBT with the advantage of a large current flowing and a thermal diffusing area achieves a strong current carrying capability and a low junction temperature. The current carrying capability （VAnode = 6 V, VGate = 15 V） increases by 16% and the maximal junction temperature （1 mW/μm） decreases by 30 K in comparison with that of a conventional thin SO1 structure.展开更多
文摘The design process in power electronics is driven by increased utilisation level of the used components to gain performance whilst keeping cost low. This article provides an overview on challenges in low-voltage high-current systems, e.g. used in automotive applications. The main content points are： topology selection--single systems vs. cascaded systems, PCB manufacturing technology overview, current measurement methods, bulk capacitor design （ceramic DC link） and PCB design instructions for high-current systems. The PCB design instructions target on optimised thermal design for maximised PCB utilisation and on optimised track design for a low inductance DC link interconnection. The paper bases on calculations, measurements and simulations.
基金Project supported by the National Natural Science Foundation of China(No.60906038)the Science-Technology Foundation for Young Scientist of University of Electronic Science and Technology of China(No.L08010301JX0831)
文摘A thick SOI LIGBT structure with a combination of uniform and variation in lateral doping profiles （UVLD） on partial membrane （UVLD PM LIGBT） is proposed. The silicon substrate under the drift region is selectively etched to remove the charge beneath the buried oxide so that the potential lines can release below the membrane, resulting in an enhanced breakdown voltage. Moreover, the thick SOI LIGBT with the advantage of a large current flowing and a thermal diffusing area achieves a strong current carrying capability and a low junction temperature. The current carrying capability （VAnode = 6 V, VGate = 15 V） increases by 16% and the maximal junction temperature （1 mW/μm） decreases by 30 K in comparison with that of a conventional thin SO1 structure.
