This paper reports that a 4H-SiC MESFET （Metal Semiconductor Field Effect Transistor） large signal drain current model based on physical expressions has been developed to be used in CAD tools. The form of drain curr...This paper reports that a 4H-SiC MESFET （Metal Semiconductor Field Effect Transistor） large signal drain current model based on physical expressions has been developed to be used in CAD tools. The form of drain current model is based on semi-empirical MESFET model, and all parameters in this model are determined by physical parameters of 4H-SiC MESFET. The verification of the present model embedded in CAD tools is made, which shows a good agreement with measured data of large signal DC I-V characteristics, PAE （power added efficiency）, output power and gain.展开更多
A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current（Ids） simulation of an Al Ga N/Ga N-based（gallium nitride） high electron mobility transistor（A...A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current（Ids） simulation of an Al Ga N/Ga N-based（gallium nitride） high electron mobility transistor（Al Ga N/Ga N-based HEMT） at high power operation. Since an accurate radio frequency（RF） current simulation is critical for a correct power simulation of the device, in this paper we propose a method of Al Ga N/Ga N high electron mobility transistor（HEMT）nonlinear large-signal model extraction with a supplemental modeling of RF drain–source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency（PAE） at class-AB quiescent bias of Vgs =-3.5 V, Vds= 30 V with a frequency of 9.6 GHz are presented.展开更多
In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors（MOSFETs） both theoretically and experimentally. The analytical model, which is ...In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors（MOSFETs） both theoretically and experimentally. The analytical model, which is based on the smallsignal equivalent circuit of MOSFETs, predicts the significant improvement of the voltage responsivity Rv with the bias current. The experiment on antennas integrated with MOSFETs agrees with the analytical model, but the Rv improvement is accompanied first by a decrease, then an increase of the low-noise equivalent power（NEP） with the applied current. We determine the tradeoff between the low-NEP and high-Rv for the current-biased detectors. As the best-case scenario, we obtained an improvement of about six times in Rv without the cost of a higher NEP. We conclude that the current supply scheme can provide high-quality signal amplification in practical CMOS terahertz detection.展开更多
The I-V characteristics and low frequency noises for indium zinc oxide thin film transistor are measured between 250 K and 430 K. The experimental results show that drain currents are thermally activated following the...The I-V characteristics and low frequency noises for indium zinc oxide thin film transistor are measured between 250 K and 430 K. The experimental results show that drain currents are thermally activated following the Meyer Neldel rule, which can be explained by the multiple-trapping process. Moreover, the field effect electron mobility firstly increases, and then decreases with the increase of temperature, while the threshold voltage decreases with increasing the temperature. The activation energy and the density of localized gap states are extracted. A noticeable increase in the density of localized states is observed at the higher temperatures.展开更多
The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with d...The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with decreasing Lch,eff, the saturation drain current （Iasat ） degradation is unexpectedly alleviated. The further study demonstrates that the anomalous Lch,eff dependence of Idsat degradation is induced by the increasing influence of the substrate current degradation on the lazar degradation with Lch,eff reducing.展开更多
在高压交流输电系统(HVAC)发生短路故障时,极大可能会产生含暂态分量(short circuit current transient component,SCTC)的短路故障电流;当SCTC含量很大时甚至会产生短路电流的零点漂移现象,会对故障限流器(fault current limiter,FCL)...在高压交流输电系统(HVAC)发生短路故障时,极大可能会产生含暂态分量(short circuit current transient component,SCTC)的短路故障电流;当SCTC含量很大时甚至会产生短路电流的零点漂移现象,会对故障限流器(fault current limiter,FCL)的限流工作和参数设计造成很大的影响。针对上述问题,提出了一种SCTC泄能型故障限流器(SCTC energy drain type fault current limiter,SEDFCL)及其参数设计方法,可以加快SCTC的衰减。首先,分析了SEDFCL与SCTC的相互影响和SEDFCL的电磁路工作机理,并研究了SEDFCL场路耦合特性,对电磁参数进行了设计;然后,通过有限元仿真搭建了220 kV SEDFCL模型,探究了SEDFCL结构的有效性、合理性、RC参数的调节作用,以及故障情况下SEDFCL功能的有效性;最后,搭建一台小容量样机,建立试验平台并进行样机试验,证实SEDFCL结构和功能的有效性。与传统五柱式限流器(five-column hybrid excitation type FCL,FHETFCL)相比,SEDFCL将时间常数显著降低117.66%,限流效果提高6.29%。展开更多
文摘This paper reports that a 4H-SiC MESFET （Metal Semiconductor Field Effect Transistor） large signal drain current model based on physical expressions has been developed to be used in CAD tools. The form of drain current model is based on semi-empirical MESFET model, and all parameters in this model are determined by physical parameters of 4H-SiC MESFET. The verification of the present model embedded in CAD tools is made, which shows a good agreement with measured data of large signal DC I-V characteristics, PAE （power added efficiency）, output power and gain.
基金Project supported by the National Natural Science Foundation of China(Grant No.61204086)
文摘A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current（Ids） simulation of an Al Ga N/Ga N-based（gallium nitride） high electron mobility transistor（Al Ga N/Ga N-based HEMT） at high power operation. Since an accurate radio frequency（RF） current simulation is critical for a correct power simulation of the device, in this paper we propose a method of Al Ga N/Ga N high electron mobility transistor（HEMT）nonlinear large-signal model extraction with a supplemental modeling of RF drain–source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency（PAE） at class-AB quiescent bias of Vgs =-3.5 V, Vds= 30 V with a frequency of 9.6 GHz are presented.
基金Project supported by the National Key R&D Program of China(Grant No.2016YFB-0402403)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20141321)+1 种基金CAST Project,China(Grant No.08201601)the National Science Foundation for Young Scholars of China(Grant No.61404072)
文摘In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors（MOSFETs） both theoretically and experimentally. The analytical model, which is based on the smallsignal equivalent circuit of MOSFETs, predicts the significant improvement of the voltage responsivity Rv with the bias current. The experiment on antennas integrated with MOSFETs agrees with the analytical model, but the Rv improvement is accompanied first by a decrease, then an increase of the low-noise equivalent power（NEP） with the applied current. We determine the tradeoff between the low-NEP and high-Rv for the current-biased detectors. As the best-case scenario, we obtained an improvement of about six times in Rv without the cost of a higher NEP. We conclude that the current supply scheme can provide high-quality signal amplification in practical CMOS terahertz detection.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61204112.61204089 and 61306099the Guangdong Provincial Natural Science Foundation under Grant No 2014A030313656
文摘The I-V characteristics and low frequency noises for indium zinc oxide thin film transistor are measured between 250 K and 430 K. The experimental results show that drain currents are thermally activated following the Meyer Neldel rule, which can be explained by the multiple-trapping process. Moreover, the field effect electron mobility firstly increases, and then decreases with the increase of temperature, while the threshold voltage decreases with increasing the temperature. The activation energy and the density of localized gap states are extracted. A noticeable increase in the density of localized states is observed at the higher temperatures.
基金Supported by Hong Kong,Macao and Taiwan Science&Technology Cooperation Program of China under Grant No2014DFH10190the Distinguished Young Scientists Foundation of Jiangsu Province under Grant No BK20130021+1 种基金the National Natural Science Foundation of China under Grant Nos 61204083 and 61306092the Qing Lan Project
文摘The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with decreasing Lch,eff, the saturation drain current （Iasat ） degradation is unexpectedly alleviated. The further study demonstrates that the anomalous Lch,eff dependence of Idsat degradation is induced by the increasing influence of the substrate current degradation on the lazar degradation with Lch,eff reducing.
文摘在高压交流输电系统(HVAC)发生短路故障时,极大可能会产生含暂态分量(short circuit current transient component,SCTC)的短路故障电流;当SCTC含量很大时甚至会产生短路电流的零点漂移现象,会对故障限流器(fault current limiter,FCL)的限流工作和参数设计造成很大的影响。针对上述问题,提出了一种SCTC泄能型故障限流器(SCTC energy drain type fault current limiter,SEDFCL)及其参数设计方法,可以加快SCTC的衰减。首先,分析了SEDFCL与SCTC的相互影响和SEDFCL的电磁路工作机理,并研究了SEDFCL场路耦合特性,对电磁参数进行了设计;然后,通过有限元仿真搭建了220 kV SEDFCL模型,探究了SEDFCL结构的有效性、合理性、RC参数的调节作用,以及故障情况下SEDFCL功能的有效性;最后,搭建一台小容量样机,建立试验平台并进行样机试验,证实SEDFCL结构和功能的有效性。与传统五柱式限流器(five-column hybrid excitation type FCL,FHETFCL)相比,SEDFCL将时间常数显著降低117.66%,限流效果提高6.29%。
基金Supported by National Natural Science Foundation of China(11775191,61404115,61434006)Development Fund for Outstanding Young Teachers in Zhengzhou University China(1521317004)
