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INVESTIGATION ON MICROELECTRODES Ⅻ THE DETERMINATION OF THE INVERSE CURRENT IN THE PROCESSES OF STEADY-STATE OR QUASI-STEADY-STATE
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作者 Huaug Xian JU Hong Yuan CHEN Hong GAO (H. KAO) Department of Chemistry, Nanjing University, Naujing 210008, China 《Chinese Chemical Letters》 SCIE CAS CSCD 1992年第6期453-456,共4页
A simple method for determining the inverse current of cyclic voltammetry in the processes of steady-state or quasi-steady-state was presented. The experimental result verified the theoretical relation or inverse and ... A simple method for determining the inverse current of cyclic voltammetry in the processes of steady-state or quasi-steady-state was presented. The experimental result verified the theoretical relation or inverse and forward current at microelectrode. Their ratio is proportional to the square root of scan rate. 展开更多
关键词 THE DETERMINATION OF THE inverse current IN THE PROCESSES OF STEADY-STATE OR QUASI-STEADY-STATE INVESTIGATION ON MICROELECTRODES
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Conduction Mechanism Analysis of Inversion Current in MOS Tunnel Diodes
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作者 Ayse Evrim Saatci Orhan Ozdemir Kubilay Kutlu 《Materials Sciences and Applications》 2013年第12期794-801,共8页
Self inversion issue and excess capacitance phenomenon were observed for the first time in relatively thick silicon dioxide (SiO2) in the form of MOS (metal(Al)/SiO2/p type crystalline silicon) structure. Both phenome... Self inversion issue and excess capacitance phenomenon were observed for the first time in relatively thick silicon dioxide (SiO2) in the form of MOS (metal(Al)/SiO2/p type crystalline silicon) structure. Both phenomena were based on minority carriers (electrons in this case) and studied through DC current-applied bias voltage (I-V) and AC admittance measurements in dark/light condition as a function of ambient temperature (295 - 380 K). Either of the cases was the departure of traditional MOS analysis, manifesting themselves in the inversion regime of MOS diode. Increase in frequency/temperature/light intensity within dark and light conditions led to weaken the maxima of hump in C-V curves and finally turned into deep depletion mode after exceeding threshold value of frequency/temperature/light intensity. In resumed conditions, supplementary I-V measurements were carried out to describe the generation and conduction mechanism(s) for minority carriers (electrons). 展开更多
关键词 Excess Capacitance MOS Selfly Inverted Region Tunneling Based Inversion currents
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Comparisons of STRETCH meat grinders based on two different topologies of ICCOS
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作者 刘辉 毕世华 +2 位作者 李军 刘培柱 陈阵 《Journal of Beijing Institute of Technology》 EI CAS 2013年第4期432-439,共8页
Inductive energy storage systems (IES)require opening switches which are technically much more difficult to realize than closing switches. Institute of Advanced Technology ( IAT ) puts forward a meat grinder with ... Inductive energy storage systems (IES)require opening switches which are technically much more difficult to realize than closing switches. Institute of Advanced Technology ( IAT ) puts forward a meat grinder with an inductive pulse power topology called slow transfer of energy through capacitive hybrid (STRETCH). In this topology, an integrated gate-commutated thyristor (IGCT) is capable of breaking the charging currents on the order of 4 kA, and it may encounter difficulties in expanding to higher energy systems. German-French Institute of Saint Louis (ISL) has developed a high-power opening switch based on standard high-power thyristors by using their so-called inverse current commutation with semiconductor devices (ICCOS) countercurrent commutation principle. Two topologies of the STRETCH meat grinder with ICCOS are analyzed. And they are compared based on the voltage across the main switch, the current multiplication factor and other aspects by u- sing Matlab simulations. The advantages and disadvantages of the two topologies are shown through the comparisons. Therefore a more suitable topology can be chosen for realistic applications accord- ing to their performances. 展开更多
关键词 inductive pulse power supplies STRETCH meat grinder IGCT inverse current commu-tation with semiconductor devices (ICCOS) comparisons
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