Stress Induced Leakage Current in Different Thickness Ultrathin Gate Oxide MOSFET

A study of the gate current variation is presented for various thickness ultrathin gate oxides ranging from 1.9 to 3.0nm under the constant voltage stress.The experimental results show the stress induced leakage current(SILC) includes two parts.One is due to the interface trap-assisted tunneling.The other is owing to the oxide trap-assisted tunneling.

Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors

As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs.

Wave-current bottom shear stresses and sediment re-suspension in the mouth bar of the Modaomen Estuary during the dry season

On the basis of the measurement data pertaining to waves, current, and sediment in February 2012 in the mouth bar of the Modaomen Estuary, the Soulsby formulae with an iterative method are applied to calculating bottom shear stresses （BSS） and their effect on a sediment resuspension. Swell induced BSS have been found to be the most important part of the BSS. In this study, the correlation coefficient between a wavecurrent shear stress and SSC is 0.86, and that between current shear stresses and SSC is only 0.40. The peaks of the SSC are consistent with the height and the BSS of the swell. The swell is the main mechanism for the sediment re-suspension, and the tidal current effect on sediment re-suspension is small. The peaks of the SSC are centered on the high tidal level, and the flood tide enhances the wave shear stresses and the SSC near the bottom. The critical shear stress for sediment re-suspension at the observation station is between 0.20 and 0.30 N/m2. Tidal currents are too weak to stir up the bottom sediment into the flow, but a WCI （wave-current interaction） is strong enough to re-suspend the coarse sediment.

The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses

The conduction mechanism of stress induced leakage current （SILC） through 2nm gate oxide is studied over a gate voltage range between 1.7V and stress voltage under constant voltage stress （CVS）. The simulation results show that the SILC is formed by trap-assisted tunnelling （TAT） process which is dominated by oxide traps induced by high field stresses. Their energy levels obtained by this work are approximately 1.9eV from the oxide conduction band, and the traps are believed to be the oxygen-related donor-like defects induced by high field stresses. The dependence of the trap density on stress time and oxide electric field is also investigated.

Giant Stress-impedance Effect in Amorphous and Current Annealed Fe_(73.5)Cu_1Nb_3Si_(13.5)B_9 Ribbons

The giant stress-impedance (GSI) effect in amorphous and current annealed Fe73.5Cu1Nb3Si13.5B9 ribbons has been investigated. The results showed that the GSI effect changed drastically with annealing techniques and the maximum stress impedance ratio of 350% was obtained after optimal conditions of current annealing. The behaviors of the stress impedance vary with densities of annealing current and the stress longitudinally applied during current annealing. The maximum change of stress impedance existed in the sample annealed by high-current-density electropulsing under applied stress of 100 MPa.

Three-Dimensional Wave-Induced Current Model Equations and Radiation Stresses

After the approach by Mellor （2003, 2008）, the present paper reports on a repeated effort to derive the equations for three-dimensional wave-induced current. Via the vertical momentum equation and a proper coordinate transformation, the phase-averaged wave dynamic pressure is well treated, and a continuous and depth-dependent radiation stress tensor, rather than the controversial delta Dirac function at the surface shown in Mellor （2008）, is provided. Besides, a phase-averaged vertical momentum flux over a sloping bottom is introduced. All the inconsistencies in Mellor （2003, 2008）, pointed out by Ardhuin et al. （2008） and Bennis and Ardhuin （2011）, are overcome in the presently revised equations. In a test case with a sloping sea bed, as shown in Ardhuin et al. （2008）, the wave-driving forces derived in the present equations are in good balance, and no spurious vertical circulation occurs outside the surf zone, indicating that Airy’s wave theory and the approach of Mellor （2003, 2008） are applicable for the derivation of the wave-induced current model.

Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress

The progressive current degradation and breakdown behaviors of GaN-based light emitting diodes under high reversebias stress are studied by combining the electrical, optical, and surface morphology characterizations. The current features a typical “soft breakdown” behavior, which is linearly correlated to an increase of the accumulative number of electroluminescence spots. The time-to-failure for each failure site approximately obeys a Weibull distribution with slopes of about 0.67 and 4.09 at the infant and wear-out periods, respectively. After breakdown, visible craters can be observed at the device surface as a result of transient electrostatic discharge. By performing focused ion beam cuts coupled with scan electron microscope, we observed a local current shunt path in the surface layer, caused by the rapid microstructure deterioration due to significant current heating effect, consistent well with the optical beam induced resistance change observations.

Research on Measurement of Bed Shear Stress Under Wave-Current Interaction

The movement of sediment in estuary and on coast is directly restricted by the bed shear stress. Therefore, the research on the basic problem of sediment movement by the bed shear stress is an important way to research the theory of sediment movement. However, there is not a measuring and computing method to measure the bed shear stress under a complicated dynamic effect like wave and current. This paper describes the measurement and test research on the bed shear stress in a long launder of direct current by the new instrument named thermal shearometer based on micro-nanotechnology. As shown by the research results, the thermal shearometer has a high response frequency and strong stability. The measured results can reflect the basic change of the bed shear stress under wave and wave-current effect, and confirm that the method of measuring bed shear stress under wave-current effect with thermal shearometer is feasible. Meanwhile, a preliminary method to compute the shear stress compounded by wave-current is put forward according to the tested and measured results, and then a reference for further study on the basic theory of sediment movement under a complicated dynamic effect is provided.

Low voltage substrate current： a monitor for interface states generation in ultra-thin oxide n-MOSFETs under constant voltage stresses

The low voltage substrate current （Ib） has been studied based on generation kinetics and used as a monitor of interface states （Nit） generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is found that the low voltage Ib is formed by electrons tunnelling through interface states, and the variations of Ib（△Ib） are proportional to variations of Nit （△Nit）. The Nit energy distributions were determined by differentiating Nit（Vg）. The results have been compared with that measured by using gate diode technique.

固态变压器中隔离双向DC/DC变换器扩展移相下虚拟电流控制策略

该文以固态变压器后级隔离双向DC/DC变换器为重点研究对象,提出一种扩展移相下虚拟电流控制策略。通过分析后级变换器在扩展移相传输功率下相移量关系以获得最小电流应力最优解来提高变换器的传输效率,减少器件损耗。同时通过虚拟电流控制思想在线估算传输功率来提高系统动态响应性能,减少电流传感器使用。最后,对该文所提出的扩展移相下虚拟电流控制与扩展移相控制进行实验对比分析,验证了扩展移相下虚拟电流控制策略具有降低电流应力,显著提高变换器的动态响应的优点。

Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process

In the process of high-k films fabrication, a novel multi deposition multi annealing （MDMA） technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing （PDA） times. The equivalent oxide thickness （EOT） decreases when the annealing time（s） change from 1 to 2. Furthermore, the characteristics of SILC （stress-induced leakage current） for an ultra-thin SiO2/HfO2 gate dielectric stack are studied systematically. The increase of the PDA time（s） from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes.

双有源桥变换器双移相控制动态特性优化方法

为了提高双移相控制的双有源桥DAB(dual active bridge)变换器负载切换的动态响应性能及减小电流应力,研究了1种改进型双移相NDPS(novel dual phase shift)控制方法,通过改变传统双移相TDPS(traditional dual phase shift)控制内移相角移动方向,重构了传输功率与移相比的关系,增大了移相比调节范围。研究了电流应力最小化条件下双移相控制最优移相比的求解方法,对比分析NDPS与TDPS控制方式负载切换时的动态响应特性。最后搭建了DAB变换器实验平台对理论分析进行实验验证,实验结果表明,轻载条件下,基于电流应力最小化方法得到的最优移相比组合可以有效减小电流应力,同时NDPS比TDPS控制方式有更好的动态响应特性。

身管外壳对电磁轨道发射装置发射性能影响分析

电枢在发射过程中,瞬时变化的导轨电流会在金属身管外壳上感应出巨大的涡流,身管涡流会产生额外的损耗,同时外壳涡流的去磁效应会改变电枢、导轨等器部件的应力分布从而影响装置发射性能。该文建立了电磁轨道发射装置的数学模型,并针对整体式、上下分断式以及叠压式三种外壳结构有限元模型进行了电磁场-结构场联合仿真,获得了发射装置电磁参数和各部件应力分布。有限元电磁仿真结果表明,叠压式外壳结构外壳涡流最小、电感梯度最大、器部件应力最大,整体式外壳结构外壳涡流最大、电感梯度最小、器部件应力最小。全系统电气仿真和对比试验证明,在满足外壳支持强度和装置各部件应力条件下,选用高磁导率、低电导率的材料并设计抑制涡流的身管外壳结构,有利于提高发射装置电枢出口速度和系统效率,从而获得优良的发射性能。

基于扩展移相的ISOP-DAB变换器混合优化控制方法

输入串联输出并联-双有源电桥(ISOP-DAB)变换器多应用于大功率高电压场合,为降低ISOP-DAB变换器的电流应力并提高系统的动态性能,本文提出一种基于扩展移相调制混合优化控制方法。首先分析在扩展移相下变换器的工作模式和功率模型,通过拉格朗日优化算法获取电流应力最优的相移组合,并结合虚拟电压均衡控制方案,以应对负载突变或输入电压扰动状态,同时结合变换器的结构特征使用输入电压均值完成模块间功率的动态平衡。最后,将混合优化控制方法、基于单移相的虚拟功率控制和传统的扩展移相优化控制进行对比实验。实验结果证明了混合优化控制在功率均分的同时可以实现电流应力优化,提高能量传输效率,同时也显著地改善了变换器在扰动情况下的动态特性。

基于新扩展移相双有源全桥变换器

为降低双有源全桥变换器在降压-升压模式下的电流应力,提出一种基于新扩展移相调制的电流应力优化控制策略.首先,将变压器两端输出高电平电压之间移相量定义为外移相角,再对比分析降压-升压模式下内移相角在变压器不同侧时变换器的工作特性,根据移相角之间的关系划分为3种工作模态,得到电流应力表达式和功率模型.然后,对比分析得到优化工作模式,利用拉格朗日乘数法算法获取电流应力最优的相移组合.最后,搭建实验平台在降压-升压模式下对变换器进行验证,实验结果表明电流应力优化控制策略显著降低变换器在降压-升压模式下的电流应力.

三重移相控制的DAB变换器多目标统一优化控制策略

针对双有源桥变换器存在电流应力大、全部开关管软开关实现困难以及动态响应慢的问题,提出1种基于三重移相控制的多目标统一优化控制策略。分析三重移相控制正向功率流的全局模式,选出其中3种高效率模式并建立电流应力和软开关解析模型。结合模型,采用成本函数优化方程推导不同模式下的最优移相比组合和最小电流应力,使开关管运行在零电压开关功率约束范围内。同时在效率优化过程中引入虚拟功率分量,构建小信号模型并阐明不同状态变量的小扰动对输出电压的影响较小。实验结果表明,所提控制策略可以在全功率范围内降低双有源桥变换器的电流应力且使所有开关管实现零电压开通,同时还能够提高输出电压的动态性能。

基于DAB的蓄电池最小电流应力控制策略研究

双有源桥(DAB)变换器是一种适用于蓄电池充电的双向DC/DC变换器。为减小蓄电池充电过程中的功率损耗并提高传输效率,提出了双重移相(DPS)最小电流应力控制策略,分析DAB变换器全部开关管的零电压开通(ZVS)的电感电流约束条件,求解得到ZVS区域内电流应力最小时的移相比组合,能够减小蓄电池的充电损耗,提高充电效率,并通过理论对比验证了优化效果。仿真与实验结果均表明,所提优化策略可以实现开关管ZVS以及最小电流应力,从而减小损耗,提高变换器的性能。

低压应力对片状软磁材料磁性能的影响

对两种片状软磁材料(H12、1JH3)在低压应力状态下的直流磁性能进行了研究,试验表明,低压应力对软磁材料具有较大影响,且不同材料的影响趋势及程度各不相同。验证了直流磁性能测试的国家标准中,保护盒的应用是必要的。

受载煤体微电流效应及煤岩动力灾害预警应用展望

利用建立的受载煤体微电流测试系统,开展不同加载条件下煤样微电流测试试验,研究揭示煤体受载变形微电流效应,分析煤体受载变形过程微电流响应特征,研究微电流与煤体力学行为间的定量关系,提出微电流法预测煤岩动力灾害的原理,结合现场实践结果,对微电流技术的应用前景进行展望。结果表明,煤体受载变形能够产生微电流,微电流变化与应力变化具有较好的一致性,微电流与煤体力学行为(应力、应变、应变率等)紧密相关,在压密阶段和塑性变形阶段,微电流随应变率增加而增加,在弹性变形阶段随应力和应变线性增加;煤体在扰动载荷下能够产生随应力周期性变化的微电流,即脉动直流电,其变化与应力变化一致。微电流对煤体破坏具有较好的前兆响应,微电流在加速增加过程(塑性变形阶段)中的异常波动可作为煤体渐进性破坏的前兆特征,微电流在衰减过程中的脉冲式波动可作为煤体蠕变破坏的前兆特征。煤体受载微电流效应及现场应力梯度的存在,是矿井微电流测试的重要基础;微电流与煤体力学行为间的紧密相关性,是利用微电流技术观测煤岩体应力的重要前提;微电流对煤体破坏具有明显的前兆响应,是利用微电流技术预测预报煤岩动力灾害的重要保障。微电流技术具有响应灵敏度高、前兆信息明显和抗干扰能力强的优点,在煤岩体应力观测及煤岩动力灾害预警中具有很好的应用前景。未来需进一步开展受载煤岩微电流基础理论及应用技术方面的研究,为发展煤岩动力灾害精准时空监测预警的微电流法提供支撑。

长输油气管道内检测技术

管道内检测技术是长输油气管道内检测最有效的方法之一,是长输油气管道缺陷检测、评估与完整性评价的重要手段。随着我国能源行业的高速发展,管道成为能源输送的最有效载体,这对管道内检测技术提出了新的挑战,应运而生多种新的检测方法与解决方案。梳理了长输油气管道内检测技术的发展过程,阐述了长输油气管道内检测技术的国内外研究现状,针对长输油气管道内检测现存在的问题,对新技术、新方法的原理、应用情况进行归纳总结,并提出管道内检测行业的未来展望。