Direct-current transfer characteristics of (InGaN)/A1GaN/A1N/GaN heterojunction field effect transistors (HFETs) are presented. A drain current plateau (IDs = 32.0 mA/mm) for Vcs swept from +0.7 V to -0. 6 V is...Direct-current transfer characteristics of (InGaN)/A1GaN/A1N/GaN heterojunction field effect transistors (HFETs) are presented. A drain current plateau (IDs = 32.0 mA/mm) for Vcs swept from +0.7 V to -0. 6 V is present in the transfer characteristics of InGaN/AIGaN/AIN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) in InGaN/AIGaN/A1N/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when IDs Vcs scans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.展开更多
基金Supported by the Knowledge Innovation Project of the Chinese Academy of Sciencesthe National Natural Science Foundation of China under Grant Nos 61204017 and 61334002+1 种基金the National Basic Research Program of Chinathe National Science and Technology Major Project of China
文摘Direct-current transfer characteristics of (InGaN)/A1GaN/A1N/GaN heterojunction field effect transistors (HFETs) are presented. A drain current plateau (IDs = 32.0 mA/mm) for Vcs swept from +0.7 V to -0. 6 V is present in the transfer characteristics of InGaN/AIGaN/AIN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) in InGaN/AIGaN/A1N/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when IDs Vcs scans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.