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Preparation and characterization of CuO nanowire arrays
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作者 于冬亮 葛传楠 都有为 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第7期11-14,共4页
CuO nanowire arrays were prepared by oxidation of copper nanowires embedded in anodic aluminum oxide (AAO) membranes. The AAO was fabricated in an oxalic acid at a constant voltage. Copper nanowires were formed in t... CuO nanowire arrays were prepared by oxidation of copper nanowires embedded in anodic aluminum oxide (AAO) membranes. The AAO was fabricated in an oxalic acid at a constant voltage. Copper nanowires were formed in the nanopores of the AAO membranes in an electrochemical deposition process. The oxidized copper nanowires at different temperatures were studied. X-ray diffraction patterns confirmed the formation of a CuO phase after calcining at 500 ?C in air for 30 h. A transmission electron microscopy was used to characterize the nanowire morphologies. Raman spectra were performed to study the CuO nanowire arrays. After measuring, we found that the current–voltage curve of the CuO nanowires is nonlinear. 展开更多
关键词 NANOWIRES CUO SEMICONDUCTORS current-voltagecharacteristic
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