Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors(CNTFETs) with strain applied. The doped source-dra...Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors(CNTFETs) with strain applied. The doped source-drain contact CNTFETs outperform the Schottky contact devices with and without strain applied. The off-state current in both types of contact is similar with and without strain applied. This is because both types of contact offer very similar potential barrier in off-state. However, the on-state current in doped contact devices is much higher due to better modulation of on-state potential profile, and its variation with strain is sensitive to the device contact type. The on/off current ratio and the inverse subthreshold slope are better with doped source-drain contact, and their variations with strain are relatively less sensitive to the device contact type. The channel transconductance and device switching performance are much better with doped source-drain contact, and their variations with strain are sensitive to device contact type.展开更多
使用基于快速傅里叶变换和共轭梯度法的接触程序,分析了滤波截止频率对粗糙点接触机理的影响.计算结果表明:粗糙表面形貌数据再处理时使用的滤波器滤波截止频率,对力-接近量关系有着明显的影响;滤波截止频率越小,接触面积越大,接触压力...使用基于快速傅里叶变换和共轭梯度法的接触程序,分析了滤波截止频率对粗糙点接触机理的影响.计算结果表明:粗糙表面形貌数据再处理时使用的滤波器滤波截止频率,对力-接近量关系有着明显的影响;滤波截止频率越小,接触面积越大,接触压力越小;滤波截止频率的改变会导致Von M ises应力的显著改变,这种改变在接触面上特别明显.因此,在实际研究粗糙表面的接触机理时,选择合适的滤波截止频率是非常必要的.展开更多
The DC and RF performance of 30 nm gate length enhancement mode （E-mode） InAlN/AIN/GaN high electron mobility transistor （HEMT） on SiC substrate with heavily doped source and drain region have been inves- tigated ...The DC and RF performance of 30 nm gate length enhancement mode （E-mode） InAlN/AIN/GaN high electron mobility transistor （HEMT） on SiC substrate with heavily doped source and drain region have been inves- tigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, lnGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance gm of 1050 mS/mm, current gain cut-off frequency f of 350 GHz and power gain cut-off frequency fmax of 340 GHz. At room temperature the measured carrier mobility （μ）, sheet charge carrier density （ns） and breakdown voltage are 1580 cm2/（V.s）, 1.9× 1013 cm-2, and 10.7 V respectively. The superla- tives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.展开更多
文摘Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors(CNTFETs) with strain applied. The doped source-drain contact CNTFETs outperform the Schottky contact devices with and without strain applied. The off-state current in both types of contact is similar with and without strain applied. This is because both types of contact offer very similar potential barrier in off-state. However, the on-state current in doped contact devices is much higher due to better modulation of on-state potential profile, and its variation with strain is sensitive to the device contact type. The on/off current ratio and the inverse subthreshold slope are better with doped source-drain contact, and their variations with strain are relatively less sensitive to the device contact type. The channel transconductance and device switching performance are much better with doped source-drain contact, and their variations with strain are sensitive to device contact type.
文摘使用基于快速傅里叶变换和共轭梯度法的接触程序,分析了滤波截止频率对粗糙点接触机理的影响.计算结果表明:粗糙表面形貌数据再处理时使用的滤波器滤波截止频率,对力-接近量关系有着明显的影响;滤波截止频率越小,接触面积越大,接触压力越小;滤波截止频率的改变会导致Von M ises应力的显著改变,这种改变在接触面上特别明显.因此,在实际研究粗糙表面的接触机理时,选择合适的滤波截止频率是非常必要的.
文摘The DC and RF performance of 30 nm gate length enhancement mode （E-mode） InAlN/AIN/GaN high electron mobility transistor （HEMT） on SiC substrate with heavily doped source and drain region have been inves- tigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, lnGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance gm of 1050 mS/mm, current gain cut-off frequency f of 350 GHz and power gain cut-off frequency fmax of 340 GHz. At room temperature the measured carrier mobility （μ）, sheet charge carrier density （ns） and breakdown voltage are 1580 cm2/（V.s）, 1.9× 1013 cm-2, and 10.7 V respectively. The superla- tives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.
