Limitations of On-Wafer Calibration and De-Embedding Methods in the Sub-THz Range

This paper investigates frequency limitations of calibration and de-embedding techniques for S parameter measurements. First, the TRL calibration methods are analysed and the error due to the probe movement when measuring the different line lengths is quantified, next the coupling between the probe-heads and the wafer surface is investigated and finally an upper frequency validity limit for the standard Open-Short de-embedding method is given. The measured results have been confirmed thanks to the use of an electro-magnetic simulator.

Research on COB De-embedding in Scattering Parameter Measurement

The popular radio frequency(RF) chip on board(COB) test has gradually taken the place of onwafer test due to the high efficiency and high power. This paper presents the extended Open-Short-Load(OSL) that is one-port calibration method to verify the error model de-embedding in S parameter measurement. Threelevel cascade structure on COB's system error model is proposed and analyzed. Four kinds of calibration plane solutions for de-embedding are verified. At last,on-board calibration(CAL) kits solution is established to decrease the system error to the least value. The maximum error shift can be controlled less than 0.1 dB comparing with the on-wafer test results. In general,the practical application results prove that this method is reasonable and effective and easy to be mastered.

A Novel De-Embedding Technique of Packaged GaN Transistors

This paper presents a novel de-embedding technique of packaged high-powertransistors. With the proposed technique, the packaged model of the power amplifier (PA)tube can be divided into the frequency independent de-embedded intrinsic device (DID)and the frequency dependent internal parasitic network (IPN), which is of great help in reducingthe design complexity of a broadband PA. Different from the conventional techniqueof parasitic extraction, the proposed technique only requires external measurements.The frequency independent characteristic of DID is verified and the IPN is modeledand calibrated for a 50 W gallium-nitride (GaN) transistor. At last, a broadbandDoherty PA is fabricated with the de-embedding technique. According to the measured results,the PA exhibits satisfactory power and efficiency performance.

Modeling of a Schottky Diode in CMOS Process with a Flexible “Open-Through” On-Chip De-embedding Method

Modeling of Schottky diodes in the CMOS process is a key step in ultra-high frequency （UHF） ra- dio frequency identification （RFID） transponder designs. Accurate Schottky diode models need both DC and RF models. Conventional DC models of the Schottky diode fail to predict the forward leakage current, which is crucial for precise simulation results. This paper presents a Schottky diode model with an additional diode which gives the correct forward leakage current. The RF model of the Schottky diode is constructed based on the measured S-parameters. Then, an on-chip de-embedding process is needed to remove the parasitics due to the pads and interconnection lines in the S-parameter test. A flexible ＂open-through＂ on-chip de-embedding method is proposed which only requires an ＂open＂ dummy and a ＂through＂ dummy, with all the lumped and distributed parasitics equivalent to two-port networks to give sufficient high-frequency de-embedding accuracy. By the help of this de-embedding method and the new DC model, the accuracy of the established diode model could be guaranteed. The Schottky diode model is verified by comparison between measurements and simulations and successfully applied to an RFID transponder design.

New de-embedding structures for extracting the electrical parameters of a through-silicon-via pair

Two innovative de-embedding methods are proposed for extracting an electrical model for a through- silicon-via （TSV） pair consisting of a ground-signal （GS） structure. In addition, based on microwave network theory, a new solution scheme is developed for dealing with multiple solutions of the transfer matrix during the process of de-embedding. A unique solution is determined based on the amplitude and the phase characteristic of S parameters. In the first de-embedding method, a typical ＂π＂ type model of the TSV pair is developed, which illustrates the need to allow for frequency dependence in the equivalent TSV pair Spice model. This de-embedding method is shown to be effective for extracting the electrical properties of the TSVs. The feasibility of a second de-embedding method is also investigated.

On-wafer de-embedding techniques from 0.1 to 110 GHz

On-wafer S-parameter de-embedding techniques from 0.1 to 110 GHz are researched. The solving re- suits of thru-reflect-line （TRL） and line-reflect-match （LRM） de-embedding algorithms, when the input and output ports are asymmetric, are given. The de-embedding standards of TRL and LRM are designed on an InP substrate. The validity of the de-embedding results is demonstrated through two passive components, and the accuracy of TRL and LRM de-embedding techniques is compared from 0.1 to 110 GHz. By utilizing an LRM technique in 0.1- 40 GHz and a TRL technique in 75-110 GHz, the intrinsic S-parameters of active device HBT in two frequency bands are obtained, and comparisons of the extracted small-signal current gain and the unilateral power gain before and after de-embedding are presented. The whole S-parameters of actual DUT from 0.1 to 110 GHz can be obtained by interpolation.

Multifunctional AlPO_(4)reconstructed LiMn_(2)O_(4)surface for electrochemical lithium extraction from brine

LiMn_(2)O_(4)(LMO)electrochemical lithium-ion pump has gained widespread attention due to its green,high efficiency,and low energy consumption in selectively extracting lithium from brine.However,collapse of crystal structure and loss of lithium extraction capacity caused by Mn dissolution loss limits its industrialized application.Hence,a multifunctional coating was developed by depositing amorphous AlPO_(4)on the surface of LMO using sol-gel method.The characterization and electrochemical performance test provided insights into the mechanism of Li^(+)embedment and de-embedment and revealed that multifunctional AlPO_(4)can reconstruct the physical and chemical state of LMO surface to improve the interface hydrophilicity,promote the transport of Li^(+),strengthen cycle stability.Remarkably,after 20 cycles,the capacity retention rate of 0.5AP-LMO reached 93.6%with only 0.147%Mn dissolution loss.The average Li^(+)release capacity of 0.5AP-LMO//Ag system in simulated brine is 28.77 mg/(g h),which is 90.4%higher than LMO.Encouragingly,even in the more complex Zabuye real brine,0.5AP-LMO//Ag can still maintain excellent lithium extraction performance.These results indicate that the 0.5AP-LMO//Ag lithium-ion pump shows promising potential as a Li^(+)selective extraction system.

GaN收发多功能芯片在片集成测试优化

为了解决传统开关集成测试方案中严苛的时序同步要求,根据GaN收发多功能芯片的在片电参数测试需求,采用环行器优化测试方案,减少芯片测试时序变量,提高了芯片测试程序的鲁棒性,并且利用去嵌入技术对系统的校准进行简化。通过典型器件的测试对方案进行了验证,结果表明,环行器优化测试方案与传统的开关集成测试方案输出结果基本一致,优化测试方案是有效的。

基于嵌入式系统的输电线路除冰机器人设计

阐述一种基于嵌入式系统的输电线路除冰破冰机器人,利用破冰锥的特殊结构进行除冰破冰。此装置以嵌入式系统,通过物联网设计、3D建模和打印技术应用,能够确保高效除冰。

宽带滤波器传输线法去嵌的研究

为准确获取谐振器材料参数,采用开路短路法、集总参数法、传输线法三种方法分别对谐振器进行去嵌,并分析去嵌对滤波器产生的影响。其中传输线法去嵌无需流片,仿真即可得出谐振器测试结构的寄生参数。采用传输线法对串联、并联谐振去嵌,并运用去嵌后的谐振器材料参数搭建滤波器,滤波器采用九阶π型电路拓扑结构,其带宽为160 MHz,阻带抑制为-25 dB。证实谐振器的测试结构对宽带声表面波滤波器带宽、阻带和零点造成影响,使得去嵌后的滤波器左侧零点向低频偏移,低频抑制上升,高频抑制下降,通带插入损耗增加。

基于全波仿真和去嵌入测试相结合的ARM芯片PDN阻抗提取方法

为提取内部电路和材料信息未知的ARM芯片电源分配网络阻抗参数,将全波仿真与去嵌入测试相结合,提出了一种ARM芯片PDN阻抗提取方法.首先,设计出ARM芯片PDN阻抗测试夹具;其次,基于全波仿真,获取阻抗测试夹具的S参数;然后,采用去嵌入技术测试,获得ARM芯片PDN阻抗,并建立等效电路模型;最后,采用数字控制电路应用板,对该等效电路模型进行校验.结果表明:阻抗曲线的谐振频率仿真值和测试值分别为56.34和57.37 MHz;阻抗曲线仿真结果和测试结果在10~1000 MHz频段内具有较好的一致性,从而证明该方法能够准确提取贴片电子元件的阻抗参数.

小型化高隔离度射频滤波模组设计研究

围绕射频滤波模组设计开展研究,针对模组小型化高集成度设计中的射频信号传输及隔离问题,进行了内部关键电路结构的精细化三维电磁场建模仿真分析,以提高模型的准确度。通过关键结构制作及去嵌测试,验证了仿真设计的准确性。并加工了一款尺寸为14.97 mm×12.01 mm×1.29 mm的L波段射频滤波模组,该滤波模组集成滤波器数量为16个,插入损耗≤5.20 dB,带外抑制≥42.5 dB。

农田水利治理的困境与出路——基于内蒙古河套灌区W县的实地调查

农业税费改革推动了农田水利管理体制的结构性转变,农田灌溉管理权力被重新分解,形成了一种地方政府和水管局联合治理的新模式。然而,基于对内蒙古河套灌区W县的实地研究,发现灌区农田水利治理呈现出地方政府负责农田水利工程项目建设,水管局负责灌溉管理的“脱嵌型”治理特征。在农田水利管理过程中,一方面,水管局事业单位企业化经营的性质使其面临“谋利型经营者”与“代理型经营者”之间的角色冲突,在提供公共服务的同时,无法通过水资源“买卖”维持单位运转和人员开支。另一方面,地方政府的项目逻辑造成其对农田水利的错位治理,而压力型的政治体制与维持社会稳定的任务要求又使其深陷农田水利纠纷解决之中。最终,农田水利服务供给陷入困境。针对问题提出了政府部门合作治理,构建多元立体合作模式等建议。

去嵌入法计量双阴或双阳接口矢网电子校准件方法的探讨

本文介绍了去嵌入法,使用矢量网络分析仪检验件计量特殊接口,如双阴或双阳接口电子校准件,避免复杂的数据处理过程。同时,消除夹具对被测校准件的影响,使测量的参考平面从校准网络分析仪转化为测量结果,从而得到特殊接口电子校准件的各S参数值,并验证参数是否符合要求。

脱嵌与再嵌入:年轻村干部参与村庄治理的行为调适——基于S镇的田野调查

年轻村干部是实现农村基层治理现代化转型的重要后备力量。年轻村干部属于农村返乡青年中的一类群体,“何以返乡”背后受家庭回归、个体本体性价值回归以及本地区结构性剩余资源吸引等综合因素的驱动。作为农村基层自治组织中的新型力量,其返乡并进入村庄社会治理实践后,客观上面临着与农村社会在场域、关系、价值等取向上的多重脱嵌性,多重脱嵌性实际带来年轻村干部“去公共性”的治理认同困境、公共社会关系构建能力弱化和现代治理规则的乡土性遭遇。年轻村干部重新主动再嵌入村庄社会的结构、关系和规范中,这也是适应性转换和行动调适的过程,他们试图通过从场域、价值、关系等层面的再嵌入,使得生疏村庄社会再熟悉化、公共关系重新建构和地方性知识再习得以支持其村庄的治理。长远来看,年轻村干部实践行动直接影响着农村基层治理现代化的整体水平,对该主体治理行动特性进行研究具有重要的现实价值。

基于单端口误差的多通道测试方法研究

针对多通道测试时需去除开关矩阵带来的链路误差问题,本文提出了一种利用单端口误差进行多通道测试的方法。首先,将矢量网络分析仪、开关矩阵分别与电子校准件连接,并进行第一级SOLT自校准和第二级单端口SOL校准;然后,通过单端口误差数据计算开关矩阵各通道的S参数,并通过T参数得到被测件的S参数。实验表明:该方法具有较强的工程实用价值。

去嵌入技术在高速背板连接器测试中的应用

随着通信技术的日益发展,人们对于数据传输速率的要求也越来越高。背板连接器作为数据传输链路的枢纽和桥梁,广泛地运用于通信技术中。背板连接器承载的数据具有速率高、吞吐量大的特点,其阻抗、传播延迟、时滞和串扰等参数都会影响数据传输的质量。但是,高速背板连接器高速性能的测试结果经常会引入夹具载板参数而与真值有较大的偏差。因此,对背板连接器测试技术的研究显得尤为重要。设计了一种适用于高速背板连接器的去嵌方法,介绍了其去嵌入原理和过程。其原理的核心为时域选通和信号流图,通过简单的推算演示去嵌入的过程。在此理论基础上,通过优化夹具和测试细节,以使测试结果更接近真值。

刺梨汁的澄清脱涩技术研究

采用明胶单宁法、壳聚糖法、皂土法等方法对其澄清脱涩,除去部分单宁。结果表明,明胶单宁法、壳聚糖法均可,其中壳聚糖法效果最好,单宁去除量约为0.665%。采用蜂蜜等物质对剩下的单宁物质进行包埋,进而改善刺梨汁的口感。

LRL校准法及其在微波测量中的应用

讨论了微波器件的测量问题，阐明了ＬＲＬ（Ｌｉｎｅ－Ｒｅｆｌｅｃｔ－Ｌｉｎｅ）校准法的物理模型。应用微波网络理论建立了基本方程，运用矩阵方法推导出待测件散射参量的闭定式表达式。由于利用代数消去法，去除了嵌入参量相位不确定性引入的误差，ＬＲＬ法可用于微波晶体管测试夹具的去嵌入。

微波多层电路过孔散射参数测量方法

过孔属于典型三维不连续结构,是微波多层电路层间互连的重要形式。通过测量获得过孔结构的散射参数是验证相应理论分析和设计方法必不可少的环节。文中提出一种测量过孔散射参数的方法,通过对被测过孔结构的二次加工和夹具的特殊设计,解决了被测件与夹具的连接问题,并且使用移动测量参考面的方法实现了校准件设计和后期测量结果去嵌入的处理。加工测量的频段从10MHz^20GHz,从实际测量与软件仿真结果的对比可以看出,测量连接和夹具的影响已被去除,得到了更准确的反映过孔特性的测量结果。