This work summarizes the structure and operating features of a high-performance 3-stage dual-delay-path (DDP) voltage-controlled ring oscillator (VCRO) with self-biased delay cells for Phase-Locked Loop (PLL) structur...This work summarizes the structure and operating features of a high-performance 3-stage dual-delay-path (DDP) voltage-controlled ring oscillator (VCRO) with self-biased delay cells for Phase-Locked Loop (PLL) structurebased clock generation and digital system driving. For a voltage supply V<sub>DD</sub> = 1.8 V, the resulting set of performance parameters include power consumption P<sub><sub></sub>DC</sub> = 4.68 mW and phase noise PN@1MHz = -107.8 dBc/Hz. From the trade-off involving P<sub>DC</sub> and PN, a system level high performance is obtained considering a reference figure-of-merit ( FoM = -224 dBc/Hz ). Implemented at schematic level by applying CMOS-based technology (UMC L180), the proposed VCRO was designed at Cadence environment and optimized at MunEDA WiCkeD tool.展开更多
针对动态电压/频率调整系统芯片中时钟同步问题,设计一个具有宽工作频率范围和固定锁定周期的快速锁定全数字逐次逼近延时锁定环,采用改进的可复位数字控制延时线方法,在减小面积和提高最高工作频率的同时,有效地解决传统全数字逐次逼...针对动态电压/频率调整系统芯片中时钟同步问题,设计一个具有宽工作频率范围和固定锁定周期的快速锁定全数字逐次逼近延时锁定环,采用改进的可复位数字控制延时线方法,在减小面积和提高最高工作频率的同时,有效地解决传统全数字逐次逼近延时锁定环的谐波锁定和零延时陷阱问题。整个延时锁定环采用TSMC-65 nm CM OS工艺标准单元库实现,仿真结果表明,在典型工艺角和25℃情况下,工作频率范围为250 M Hz^2 GHz,锁定时间为固定的18个输入时钟周期,当电源电压为1.2 V、输入时钟频率为2 GHz时,功耗为0.4 m W。展开更多
A research on the spurious tones due to the current mismatch in charge pumps of DLL(Delay Locked Loop) based RF CMOS oscillators is performed.An equation for strength evaluation of the spurious tones is derived.Two t...A research on the spurious tones due to the current mismatch in charge pumps of DLL(Delay Locked Loop) based RF CMOS oscillators is performed.An equation for strength evaluation of the spurious tones is derived.Two tables are provided to make it obvious to understand for the characteristics of spurious tones changing with related parameters.Some suggestions are given for the design of a DLL based RF CMOS oscillators.展开更多
文摘This work summarizes the structure and operating features of a high-performance 3-stage dual-delay-path (DDP) voltage-controlled ring oscillator (VCRO) with self-biased delay cells for Phase-Locked Loop (PLL) structurebased clock generation and digital system driving. For a voltage supply V<sub>DD</sub> = 1.8 V, the resulting set of performance parameters include power consumption P<sub><sub></sub>DC</sub> = 4.68 mW and phase noise PN@1MHz = -107.8 dBc/Hz. From the trade-off involving P<sub>DC</sub> and PN, a system level high performance is obtained considering a reference figure-of-merit ( FoM = -224 dBc/Hz ). Implemented at schematic level by applying CMOS-based technology (UMC L180), the proposed VCRO was designed at Cadence environment and optimized at MunEDA WiCkeD tool.
文摘针对动态电压/频率调整系统芯片中时钟同步问题,设计一个具有宽工作频率范围和固定锁定周期的快速锁定全数字逐次逼近延时锁定环,采用改进的可复位数字控制延时线方法,在减小面积和提高最高工作频率的同时,有效地解决传统全数字逐次逼近延时锁定环的谐波锁定和零延时陷阱问题。整个延时锁定环采用TSMC-65 nm CM OS工艺标准单元库实现,仿真结果表明,在典型工艺角和25℃情况下,工作频率范围为250 M Hz^2 GHz,锁定时间为固定的18个输入时钟周期,当电源电压为1.2 V、输入时钟频率为2 GHz时,功耗为0.4 m W。
文摘A research on the spurious tones due to the current mismatch in charge pumps of DLL(Delay Locked Loop) based RF CMOS oscillators is performed.An equation for strength evaluation of the spurious tones is derived.Two tables are provided to make it obvious to understand for the characteristics of spurious tones changing with related parameters.Some suggestions are given for the design of a DLL based RF CMOS oscillators.
