Temperature Dependence of Raman Scattering in 4H-SiC Films under Different Growth Conditions

The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80 K to 550K. The effects of growth conditions on E2 （TO）, E1 （TO） and A1 （LO） phonon mode frequencies are negligible. The temperature dependences of phonon linewidth and lifetime of E2 （TO） modes are analyzed in terms of an anharmonic damping effect induced by thermal and growth conditions. The results show that the lifetime of E2 （TO） mode increases when the quality of the sample improves. Unlike other phone modes, Raman shift of A1 （longitudinal optical plasma coupling （LOPC）） mode does not decrease monotonously when the temperature increases, but tends to blueshift at low temperatures and to redshift at relatively high temperatures. Theoretical analyses are given for the abnormal phenomena of A1 （LOPC） mode in 4H-SiC.

Effect of 6H-SiC (1120) substrate on epitaxial graphene revealed by Raman scattering

A nonpolar SiC（1120） substrate has been used to fabricate epitaxial graphene （EG）. Two EGs with layer numbers of 8-10 （referred to as MLG） and 2-3 （referred to as FLG） were used as representative to study the substrate effect on EG through temperature-dependent Raman scattering. It is found that Raman lineshifts of G and 2D peaks of the MLG with temperature are consistent with that of free graphene, as predicted by theory calculation, indicating that the substrate influence on the MLG is undetectable. While Raman G peak lineshifts of the FLG to that of the free graphene are obvious, however, its lineshift rate （-0.016 cm-1/K） is almost one third of that （-0.043 cm-1/K） of an EG on 6H-SiC （0001） in the temperature range from 300 K to 400 K, indicating a weak substrate effect from SiC （1120） on the FLG. This renders the FLG with a high mobility around 1812 cm2.V-1 .s -1 at room temperature even with a very high carrier concentration about 2.95 × 10 ^13 cm-2 （p-type）. These suggest SiC （1120） is more suitable for fabricating EG with high performance.

High Performance Algorithms Based on a New Wavelet Expansion for Time Dependent Acoustic Obstacle Scattering

This paper presents a highly parallelizable numerical method to solve time dependent acoustic obstacle scattering problems.The method proposed is a generalization of the“operator expansion method”developed by Recchioni and Zirilli[SIAM J.Sci.Comput.,25(2003),1158-1186].The numerical method proposed reduces,via a perturbative approach,the solution of the scattering problem to the solution of a sequence of systems of first kind integral equations.The numerical solution of these systems of integral equations is challenging when scattering problems involving realistic obstacles and small wavelengths are solved.A computational method has been developed to solve these challenging problems with affordable computing resources.To this aim a new way of using the wavelet transform and new bases of wavelets are introduced,and a version of the operator expansion method is developed that constructs directly element by element in a fully parallelizable way.Several numerical experiments involving realistic obstacles and“small”wavelengths are proposed and high dimensional vector spaces are used in the numerical experiments.To evaluate the performance of the proposed algorithm on parallel computing facilities,appropriate speed up factors are introduced and evaluated.

Giant magnetoresistance:history,development and beyond

With the discovery of giant magnetoresistance(GMR),research effort has been made to exploiting the influence of spins on the mobility of electrons in ferromagnetic materials and/or artificial structures,which has lead to the idea of spintronics.A brief introduction is given to GMR effects from scientific background to experimental observations and theoretical models.In addition,the mechanisms of various magnetoresistance beyond the GMR are reviewed,for instance,tunnelling magnetoresistance,colossal magnetoresistance,and magnetoresistance in ferromagnetic semiconductors,nanowires,organic spintronics and non-magnetic systems.