Fabrication of Titanate Barium Films by Electrophoretic Deposition Technique

EPD （electrophoretic deposition） technique has been shown as an effective method to produce thin ore thick layers at voltage 5-100 V onto Ni conductive substrate. The aim of this study is to use the EPD method to fabricate films from suspensions BaTiO3. The effects of the EPD process parameters such as the suspension concentration, deposition time, electrical field strength on the specific EPD deposited weight, morphology particles were used. The surface microstructures of the as-deposited films were investigated by SEM （scanning electron microscopy）. A homogeneous microstructure was obtained at applied electric field of 100 V and I min of deposition time at an electrode distance of 1.0 cm.

Deposition of BaTiO3 Films from EthanoI-PVB Medium

EPD （electrophoretic deposition） of barium titanate from organic medium ethanol-PVB （polyvinyl butyral） was performed on Ni, Ti, steel substrate. Stable BaTiO3 suspensions with concentration of 2 wt.% have been prepared for the deposition. A uniform and dense layer was obtained for films deposited from ethanol with PVB of 0.1%. The surface topology of deposited films can be controlled via the applied voltage. This method allows to obtain crack-free and smooth layers BaTiO3 from organic medium with thickness of 4-20 μm.

Multiphonon hopping conduction in carbon-nickel composite films at different deposition time

In this work, the electrical properties of car- bon-nickel composite films deposited at different time （50-600 s） were investigated. The films were grown by radio frequency magnetron sputtering on glass substrates at room temperature. The electrical conductivity of the films was investigated in the temperature range of 15-500 K. The conductivity data in the temperature range of 400-500 K show the extended state conduction mecha- nism, while the multiphonon hopping （MPH） conduction is found to dominate the electrical transport in the tempera- ture range of 150-300 K. The films deposited at 180 s have the maximum conductivity. The conductivity at T 〈 60 K could be described in terms of variable range hopping （VRH） conduction. The localized state density around Fermi level （N（EF）） at low temperature for the films deposited at 180 s has the minimum value of about 4.02 × 10^21 cm^-3.eV^-1. The average hopping distance （Rhop） for the films deposited at 180 s has the maximum value of about 3.51 × 10^-7 cm.

Correlation between the structural, morphological, optical, and electrical properties of In_2O_3 thin films obtained by an ultrasonic spray CVD process

Indium oxide （In2O3） thin films are successfully times by an ultrasonic spray technique using Indium chloride deposited on glass substrate at different deposition as the precursor solution; the physical properties of these films are characterized by XRD, SEM, and UV-visible. XRD analysis showed that the films are polycrys- talline in nature having a cubic crystal structure and symmetry space group Ia3 with a preferred grain orientation along the （222） plane when the deposition time changes from 4 to 10 min, but when the deposition time equals 13 min we found that the majority of grains preferred the （400） plane. The surface morphology of the In2O3 thin films revealed that the shape of grains changes with the change of the preferential growth orientation. The trans- mittance improvement of In2O3 films was closely related to the good crystalline quality of the films. The optical gap energy is found to increase from 3.46 to 3.79 eV with the increasing of deposition time from 4 to 13 min. The film thickness was varied between 395 and 725 nm. The film grown at 13 min is found to exhibit low resistivity （10-2 Ω.cm）, and relatively high transmittance （- 93%）.

Effect of Au film pre-deposited at different durations as inner electrode on the electrical properties and interface microstructures of Na_2O-PbO-Nb_2O_5-SiO_2 multi-layer glass-ceramic capacitors

To further study the effect of sputtered Au film as transition electrode layer on the electrical properties and interface microstructures of Na20-PbO-Nb2O5-SiO2 multilayer glass-ceramic capacitors, Au films pre-deposited at different time were prepared by DC magnetron sputtering. Compared with the single paste electrode structure, samples with Au films pre-deposited from 6 to 18 min have the consistent perfor- mance to effectively improve the electrical properties of the capacitors, resulting in the doubled breakdown strength, an increase of equivalent capacitance by 22% and a decrease of leakage current by an order of magnitude. SEM observations indicate that the Au films with deposition time from 6 to 18 min would all help the formation of a dense electrode/dielectric interface and inhibit the diffusion of Ag. The results reveal that Au film pre-deposited for 6 min as inner electrode was sufficient to improve the interface microstructure and therefore to inhibit the Ag diffusion and enhance the overall performance of the multi-layer glass-ceramic capacitors.