Effects of Deposition Temperature on the Properties of Fluorinated Amorphous Carbon Films

Fluorinated amorphous carbon films (a-C:F) were prepared at different temperatures using a microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) reactor with CHF3 and C2H2 as source gases. Films were annealed at 500℃ in vacuum ambience in order to investigate the relationship of their thermal stability, optical and electrical properties with deposition temperature. Results indicate that the films deposited at high temperature have a less CFX bonding and a more cross-linking structure thus a better thermal stability. They also have a lower bandgap, higher dielectric constant and higher leakage current.

Regulating Effect of Substrate Temperature on Sputteringgrown Ge/Si QDs under Low Ge Deposition

The effect of deposition temperature on the morphology and optoelectronic performance of Ge/Si QDs grown by magnetron sputtering under low Ge deposition(~4 nm)was investigated by atomic force microscopy,Raman spectroscopy,and photoluminescence(PL)tests.The experimental results indicate that temperatures higher than 750℃effectively increase the crystallization rate and surface smoothness of the Si buffer layer,and temperatures higher than 600℃significantly enhance the migration ability of Ge atoms,thus increasing the probability of Ge atoms meeting and nucleating to form QDs on Si buffer layer,but an excessively high temperature will cause the QDs to undergo an Ostwald ripening process and thus develop into super large islands.In addition,some PL peaks were observed in samples containing small-sized,high-density Ge QDs,the photoelectric properties reflected by these peaks were in good agreement with the corresponding structural characteristics of the grown QDs.Our results demonstrate the viability of preparing high-quality QDs by magnetron sputtering at high deposition rate,and the temperature effect is expected to work in conjunction with other controllable factors to further regulate QD growth,which paves an effective way for the industrial production of QDs that can be used in future devices.

Effect of active layer deposition temperature on the performance of sputtered amorphous In–Ga–Zn–O thin film transistors

The effect of active layer deposition temperature on the electrical performance of amorphous InGaZnO （a-IGZO） thin film transistors （TFTs） is investigated. With increasing annealing temperature, TFT performance is firstly improved and then degraded generally. Here TFTs with best performance defined as ＂optimized-annealed＂ are selected to study the effect of active layer deposition temperature. The field effect mobility reaches maximum at deposition temperature of 150℃ while the room-temperature fabricated device shows the best subthreshold swing and off-current. From Hall measurement results, the carrier concentration is much higher for intentional heated a-IGZO films, which may account for the high off-current in the corresponding TFT devices. XPS characterization results also reveal that deposition temperature affects the atomic ratio and Ols spectra apparently. Importantly, the variation of field effect mobility of a-IGZO TFTs with deposition temperature does not coincide with the tendencies in Hall mobility of a-IGZO thin films, Based on the further analysis of the experimental results on a-IGZO thin films and the corresponding TFT devices, the trap states at front channel interface rather than IGZO bulk layer properties may be mainly responsible for the variations of field effect mobility and subthreshold swing with IGZO deposition temperature.

Influence of deposition temperature on CdS thin films by polyol method

CdS thin films were successfully deposited onto glass substrates for the first time by the polyol method using cadmium acetate, thiourea and diethylene glycol as the raw materials. The effects of the deposition tempera- ture from 120 to 200 ℃ in steps of 20 ℃on the structure, morphology and optical properties of the resultant films were investigated. It was found that the crystallinity was improved and the value of the surface average roughness was decreased with increasing the deposition temperature. The average grain sizes of the CdS thin films were 77.16 and 76.61 nm at 140 and 180 ℃, respectively. All samples showed excellent transmittance and the band gaps were found to reduce from 2.55 to 2.45 eV with the increase of the deposition temperature, which was attributed to the improvement of crystallinity.

Annealing Effects on the Structural, Optical, and UV Photoresponse Properties of ZnO Nanostructures Prepared by RF-Magnetron Sputtering at Different Deposition Temperatures

Undoped ZnO nanostructures were deposited on SiO2/Si substrates via radio 11：equency magnetron sputtenng at different deposition temperatures （room temperature, 200, 300, and 400 ℃）. The prepared samples were annealed at 500 ℃ for 2 h under an N2 flow. The structural, surface morphological, optical, and photoresponse characteristics of ZnO nanostructures as deposited and after annealing were then investigated. The energy bandgaps of all samples after annealing （3.22-3.28 eV） decreased compared with those of the as-deposited specimens. The barrier height increased when the deposition temperature increased and reached 0.77 eV at 400 ℃ after annealing with a leakage current of 0.17 gA at a 5 V bias. The UV photodetector device which was deposited at the optimal temperature of 300 ℃, has 12.51 × 10^3% pho- tosensitivity, 2.259 pA dark current, 0.508 s response time, and 0.466 s recovery time. The dark current significantly decreased for all samples after annealing. The proposed UV photodetectors exhibit high performance, high photosensi- tivity, shorter response and recovery times, and excellent stability at lower bias voltages of 5 and 2 V.

Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition

CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen （H2）/nitrogen （N2） and growth temperature of the selective area growth （SAG） method with metal organic chemical vapor deposition （MOCVD）. The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of 1-12 will change the CaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the CaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H2：N2 ratio is 1：1 and the growth temperature is 1030℃. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature.

Deposition of Amorphous Carbon Films using ECR Plasma byVarying the Substrate Temperature

Amorphous hydrogenated carbon thin films have been deposited with benzene plasma in an electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition system. The characteristic of Benzene discharge plasma has been monitored by Mast spectrometry. It shows that the majority of the plasma species in the downstream ECR Plasma with benzene as gas source are acetylene, ethylene and higher mass species. In the experiments, the effects of the substrate temperature on the deposition rates have been emphatically studied. The structures of the films were analyzed by FTIR and Ramam spectrum.The results show that when the substrate temperature rises, the deposition rate drops down, the hydrogen Foment decreases, with the higher SP3 content being presented in the film.

Effect of deposited temperatures of the buffer layer on the band offset of CZTS/In2S3 heterostructure and its solar cell performance

The effect of the deposition temperature of the buffer layer In_2S_3 on the band alignment of CZTS/In_2S_3 heterostructures and the solar cell performance have been investigated.The In_2S_3 films are prepared by thermal evaporation method at temperatures of 30,100,150,and 200 ℃,respectively.By using x-ray photoelectron spectroscopy（XPS）,the valence band offsets（VBO） are determined to be-0.28 ±0.1,-0.28 ±0.1,-0.34 ±0.1,and-0.42 ±0.1 eV for the CZTS/In_2S_3heterostructures deposited at 30,100,150,and 200 ℃,respectively,and the corresponding conduction band offsets（CBO）are found to be 0.3 ±0.1,0.41 ±0.1,0.22±0.1,and 0.01 ±0.1 eV,respectively.The XPS study also reveals that interdiffusion of In and Cu occurs at the interface of the heterostructures,which is especially serious at 200 ℃ leading to large amount of interface defects or the formation of CuInS_2 phase at the interface.The CZTS solar cell with the buffer layer In_2S_3 deposited at 150 ℃ shows the best performance due to the proper CBO value at the heterostructure interface and the improved crystal quality of In_2S_3 film induced by the appropriate deposition temperature.The device prepared at 100 ℃presents the poorest performance owing to too high a value of CBO.It is demonstrated that the deposition temperature is a crucial parameter to control the quality of the solar cells.

Hydroxyapatite Bioceramic Coatings Prepared by Hydrothermal-electrochemical Deposition Method

The hydroxyapatite（HA） ceramic coating was successfully prepared on Ti6A14V alloy by the hydrothermal-electrochemical deposition method with constant voltage model. The phases of deposits were analyzed by X-ray diffraction. The releationship between crystallinity and depositing temperature was discussed. The microstructures of hydroxyapatite coating were observed by scanning electron microscope. The experimental results showed that the phases, crystaUinity and morphologies of deposits were influenced by depositing temperature （100℃, 120℃, 140℃, 160℃, 180℃ and 200℃, respectively）. The special hydrothermal environment can lower the crystallization temperature of HA. The crystallinity of HA increases firstly and then decreases with the increase of temperature. There is little hydroxyapatite deposited on the Ti6A14V surface when the depositing temperature is 100℃. The HA deposition increases with the increase of the depositing temperature. And the HA morphologies are influenced by the depositing temperature.

Ohmic Contact at Al/TiO_2/n-Ge Interface with TiO_2 Deposited at Extremely Low Temperature

TiO2deposited at extremely low temperature of 120°C by atomic layer deposition is inserted between metal and n-Ge to relieve the Fermi level pinning. X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy indicate that the lower deposition temperature tends to effectively eliminate the formation of GeOxto reduce the tunneling resistance. Compared with TiO2deposited at higher temperature of 250°C,there are more oxygen vacancies in lower-temperature-deposited TiO2, which will dope TiO2contributing to the lower tunneling resistance. Al/TiO2/n-Ge metal-insulator-semiconductor diodes with 2 nm 120°C deposited TiO2achieves 2496 times of current density at-0.1 V compared with the device without the TiO2interface layer case, and is 8.85 times larger than that with 250°C deposited TiO2. Thus inserting extremely low temperature deposited TiO2to depin the Fermi level for n-Ge may be a better choice.

Effect of Deposition Time on Microstructures and Growth Behavior of ZrC Coatings Prepared by Low Pressure Chemical Vapor Deposition with the Br2-Zr-C3H6-H2-Ar System

ZrC coatings were deposited on graphite substrates by low pressure chemical vapor deposition（LPCVD） with the Br2-Zr-C3H6-H2-Ar system. The effects of deposition time on the microstructures and growth behavior of ZrC coatings were investigated. ZrC coating grew in an island-layer mode. The formation of coating was dominated by the nucleation of ZrC in the initial 20 minutes, and the rapid nucleation generated a fine-grained structure of ZrC coating. When the deposition time was over 30 min, the growth of coating was dominated by that of crystals, giving a column-arranged structure. Energy dispersive X-ray spectroscopy showed that the molar ratio of carbon to zirconium was near 1：1 in ZrC coating, and X-ray photoelectron spectroscopy showed that ZrC was the main phase in coatings, accompanied by about 2.5mol% ZrO2 minor phase.

High Ferroelectricities and High Curie Temperature of BiInO3PbTiO3Thin Films Deposited by RF Magnetron Sputtering Method

Properties of ferroelectric xBiInO3-（1-x）PbTiO3（xBI-（1-x）PT） thin films deposited on（101） SrRuO3/（200）Pt/（200） MgO substrates by rf magnetron sputtering method and effects of deposition conditions are investigated.The structures of the xBI-（1-x）PT films are characterized by x-ray diffraction and scanning electron microscopy.The results indicate that the thin films are grown with mainly（001） orientation. The chemical compositions of the films are analyzed by scanning electron probe and the results indicate that the loss phenomena of Pb and Bi elements depend on the pressure and temperature during the sputtering process.The sputtering parameters including target composition, substrate temperature, and gas pressure are adjusted to obtain optimum sputtering conditions. To decrease leakage currents,2 mol% La2 O3 is doped in the targets. The P-E hysteresis loops show that the optimized xBI-（1-x）PT（x = 0.24） film has high ferroelectricities with remnant polarization2 Pr = 80μC/cm2 and coercive electric field 2 EC = 300 kV/cm. The Curie temperature is about 640℃. The results show that the films have optimum performance and will have wide applications.

Solvents incubatedπ-πstacking in hole transport layer for perovskite-silicon 2-terminal tandem solar cells with 27.21%efficiency

Room temperature sputtered inorganic nickel oxide(NiO_(x))is one of the most promising hole transport layers(HTL)for perovskite-sillion 2-terminal tandem solar cells with the aid of ultrathin and compact organic layers to passivate the surface defects.In this study,the aromatic solvent with different substituent groups was used to regulate the conformation of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)am ine](PTAA)layer.As a result,the single-junction perovskite solar cell(PSC)gained a power conversion efficiency(PCE)of 20.63%,contributing to a 27.21%efficiency for monolithic perovskite/silicon(double-side polished)2-terminal tandem solar cell,by applying the alkyl aromatic solvent to enhance theπ-πstacking of PTAA molecular chains.The tandem solar cell can maintain 95%initial efficiency after aging over 1000 h.This study provides a universal approach for improving the photovoltaic performance of NiO_(x)/polymer-based perovskite/silicon tandem solar cells and other single junction inverted PSCs.

Formation mechanism and oxidation behavior of MoSi_2-SiC protective coating prepared by chemical vapor infiltration/reaction

In order to protect C/C composites from oxidation, SiC-MoSi2 composite coating was synthesized by chemical vapor infiltration /reaction （CVI/CVR） technology. A porous Mo layer was prefabricated on SiC coated C/C composites, and then MoSi2 and SiC were subsequently prepared in a CVI /CVR process using methyltrichlorosilane （MTS） as precursor. The deposition and reaction mechanism of the MoSi2-SiC composite coating was investigated by X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The oxidation behavior of SiC-MoSi2 coated specimens was tested. The results show that the porous Mo layer can be densified with SiC phase decomposed from MTS, and transformed into SiC-MoSi2 by reacting with MTS as well. A dense composite coating was prepared with optimized deposition parameters. The coated specimen exhibits a good oxidation resistance with a little mass loss of 1.25% after oxidation at 1500 °C for 80 h.

Morphology and Structure of Nb Thin Films Grown by Pulsed Laser Deposition at Different Substrate Temperatures

This paper reports the fabrication of Nb thin films through pulsed laser deposition at different substrate temperatures, ranging from 300 to 660 K. While the variation of the substrate temperature does not affect significantly the excellent Nb thin film adhesion to the Si（100） substrate surface, the increase of the substrate temperature up to 570 K promotes an improvement of the grown film in terms of morphology and roughness. Such improvement is achieved through the formation of wider columnar structures with a reduced superficial roughness, around 5 nm, as shown by scanning electron microscopy（SEM） and atomic force microscopy. The use of temperatures over 570 K increases the substrate roughness due to the formation of irregular structures inside the film, as observed by SEM cross section analysis, and does not produce a relevant improvement on the crystalline structure of the material.

Analysis,Prediction and Process Optimization Concerning Ammonium Chloride Corrosion in Ebullated-Bed Hydrogenation Unit for Treating Residual Oil

Ammonium chloride corrosion in the reactor effluent system remains to be a barrier for the safe operation of the ebullated-bed hydrogenation unit as impurity content is higher compared with that of the ordinary hydrogenation units.In this research,a Sinopec envisaged case study was conducted on feed oil containing 2.92μg/g of Cl and 0.38%of N,because the impurity content of feed oil was representative in residue oil.The deposition patterns in heat exchangers were investigated by changing process variables,and then water wash strategy was optimized in view of the relative humidity to obtain a minimum water flowrate,and finally the process optimization suggestions concerning the operation of heat exchangers were proposed.Results show that with the measured content of nitrogen and chlorine in the feed,the NH4Cl deposition temperature of hot high-pressure vapor and hot low-pressure vapor was 223.4℃ and 173.7℃,respectively,and the minimum water wash flowrate for heat exchangers of hot high-pressure vapor with mixed hydrogen and hot low-pressure vapor with cold low-pressure oil was 38.0 t/h and 5.4 t/h,respectively.Water wash should be carried out intermittently upstream of the heat exchanger tube passes.In consideration of energy consumption,it is recommended to reduce the tube pass outlet temperature of the above heat exchangers to 240℃ and 190℃,respectively.

Effects of ionic strength and temperature on the aggregation and deposition of multi-walled carbon nanotubes

The aggregation and deposition of carbon nanotubes（CNTs） determines their transport and fate in natural waters.Therefore,the aggregation kinetics of humic-acid treated multi-walled carbon nanotubes（HA-MWCNTs） was investigated by time-resolved dynamic light scattering in NaCl and CaCl_2 electrolyte solutions.Increased ionic strength induced HA-MWCNT aggregation due to the less negative zeta potential and the reduced electrostatic repulsion.The critical coagulation concentration（CCC） values of HA-MWCNTs were 80 mmol/L in NaCl and 1.3 mmol/L in CaCl_2 electrolyte,showing that Ca^（2＋） causes more serious aggregation than Na~＋.The aggregation behavior of HA-MWCNTs was consistent with Derjaguin-Landau-Verwey-Overbeek theory.The deposition kinetics of HA-MWCNTs was measured by the optical absorbance at 800 ran.The critical deposition concentrations for HA-MWCNT in NaCl and CaCl_2 solutions were close to the CCC values,therefore the rate of deposition cannot be increased by changing the ionic strength in the diffusion-limited aggregation regime.The deposition process was correlated to the aggregation since larger aggregates increased gravitational deposition and decreased random Brownian diffusion.HA-MWCNTs hydrodynamic diameters were evaluated at 5,15 and 25℃.Higher temperature caused faster aggregation due to the reduced electrostatic repulsion and increased random Brownian motion and collision frequency.HA-MWCNTs aggregate faster at higher temperature in either NaCl or CaCl_2electrolyte due to the decreased electrostatic repulsion and increased random Brownian motion.Our results suggest that CNT aggregation and deposition are two correlated processes governed by the electrolyte,and CNT transport is favored at low ionic strength and low temperature.

The effect of discharge conditions of ICP etching reactor on plasma parameters

This study investigated the inductively coupled plasma etching reactor and RF coils developed by North Microelectronic Corporation. Full three dimensional simulations were made at different discharge conditions. The simulations examined and compared the distribution and non-uniformity of several plasma parameters at a fixed position upon the wafer at different pressures and coil currents. These parameters included electron density, electron temperature and power deposition. The results demonstrate that the electron density, power deposition and uniformity increase with either higher pressure or stronger coil currents, while the electron temperature decreases at this condition. Coil number increase can reduce the non-uniformity of parameters in the spatial distribution. The linear relationship between power deposition and electron density does not always exist. The comparison between simulation results and experiment results is also presented in the paper.

Preparation of the highly dense ceramic-metal fuel particle with fine-grained tungsten layer by chemical vapor deposition for the application in nuclear thermal propulsion

The cermet fuel element was achieved by dispersing the UO_(2)particles with or without tungsten(W)coating layer uniformly in the W matrix.It is considered to be a robust and secure fuel for use in nuclear thermal propulsion in the near future.In this study,the effect of deposition temperature on the densification and grain refinement of the W coating layer was investigated.A high-density(19.24 g·cm^(-3))W layer with a uniform thickness(~10μm)and fine grains(~297 nm)was prepared by spouted-bed chemical vapor deposition.The prepared high-density,fine-grained W layer has the following advantages.It can prevent direct contact between fuel particles,resulting in a more uniform fuel distribution.In addition,it can decrease the reaction probability between the fuel kernel and H2,and prevent the release of fission products from the fuel kernel by extending the diffusion path at grain boundaries more efficiently.Moreover,the high-density,fine-grained W layer showed outstanding thermal and mechanical performance.Its average hardness and Young's modulus were approximately 7 and 200 GPa,respectively.The thermal conductivity of the W film was 101-124 W·m^(-1)·K^(-1)at 298-773 K.This work furthers our understanding of the potential application of the high-density,fine-grained W layer in nuclear thermal propulsion.

Preparation of TiO_(2)-rich Ba-Ti-O thick films by laser chemical vapor deposition method

TiO_(2)-rich Ba-Ti-O films were prepared on Pt/Ti/SiO_(2)/Si substrate by laser chemical vapor deposition(LCVD).Their phase relationship and microstructure were investigated.The single-phase BaTi_(2)O_(5),Ba_(4)Ti_(13)O_(3)0 and BaTi_(5)O_(11) films were prepared at Ti/Ba molar ratios m_(Ti/Ba)=1.84-1.90,2.83 and 4.49-4.55,respectively.The high deposition rate of TiO_(2)-rich Ba-Ti-O films ranged from 54.0μm/h to 177.6μm/h.The permittivity of BaTi_(2)O_(5)film(prepared at m_(Ti/Ba)=1.84 and deposition temperature T_(dep)=877 K),Ba_(4)Ti_(13)O_(3)0 film(prepared at m_(Ti/Ba)=2.83 and T_(dep)=914 K)and BaTi5O11 film(prepared at m_(Ti/Ba)=4.49 and T_(dep)=955 K)were 50,40 and 21,respectively.