With Al2O3, Dy2O3, and SiO2 as starting materials, the basic glass of Al2O3-Dy2O3-SiO2 system was prepared by conventional melting technology, and their thermal expansion coefficients （TECs） at different anneal time...With Al2O3, Dy2O3, and SiO2 as starting materials, the basic glass of Al2O3-Dy2O3-SiO2 system was prepared by conventional melting technology, and their thermal expansion coefficients （TECs） at different anneal time were investigated. TECs of the basic glass, which were heat-treated under different temperature, were also investigated. The result showed that TECs of the basic glass gradually approached a fixed value as the anneal time was extended, which suggested that most of the inner stress had been eliminated. After heat treatment, the contents of Dy2O3, Dy2Si2O7, and a new crystal increased up to 1200 ℃ and decreased below 1250 ℃, which was consistent with the TEC change of crystallized samples. This suggests that the crystal has a direct effect on TECs of the crystallized samples.展开更多
Near-infrared(NIR)luminescent metal halide(LMH)materials have attracted great attention in various optoelectronic applications due to their low-temperature solution-processable synthesis,abundant crystallographic/elec...Near-infrared(NIR)luminescent metal halide(LMH)materials have attracted great attention in various optoelectronic applications due to their low-temperature solution-processable synthesis,abundant crystallographic/electronic structures,and unique optoelectronic properties.However,some challenges still remain in their luminescence design,performance improvement,and application assign-ments.This review systematically summarizes the development of NIR LMHs through classifying NIR luminescent origins into four major categories:band-edge emission,self-trapped exciton(STE)emission,ion emission,and defect-related emission.The luminescence mechanisms of different types of NIR LMHs are discussed in detail by analyzing typical examples.Reasonable strategies for design-ing and optimizing luminescence/optoelectronic properties of NIR LMHs are summarized,including bandgap engineering,self-trapping state engineering,chemical composition modification,energy transfer,and other auxiliary strategies such as improvement of synthesis scheme and post-processing.Furthermore,application prospects based on the optoelectronic devices are revealed,including phosphor-converted light-emitting diodes(LEDs),electroluminescent LEDs,pho-todetectors,solar cells,and x-ray scintillators,as well as demonstrations of some related practical applications.Finally,the existing challenges and future perspec-tives on the development of NIR LMH materials are critically proposed.This review aims to provide general understanding and guidance for the design of high-performance NIR LMHs materials.展开更多
基金Project supported by the Ministry of Science and Technology of China (2006CB601104)
文摘With Al2O3, Dy2O3, and SiO2 as starting materials, the basic glass of Al2O3-Dy2O3-SiO2 system was prepared by conventional melting technology, and their thermal expansion coefficients （TECs） at different anneal time were investigated. TECs of the basic glass, which were heat-treated under different temperature, were also investigated. The result showed that TECs of the basic glass gradually approached a fixed value as the anneal time was extended, which suggested that most of the inner stress had been eliminated. After heat treatment, the contents of Dy2O3, Dy2Si2O7, and a new crystal increased up to 1200 ℃ and decreased below 1250 ℃, which was consistent with the TEC change of crystallized samples. This suggests that the crystal has a direct effect on TECs of the crystallized samples.
基金financially supported by the National Science and Technology Major Project(2023YFB3506600)the National Natural Science Foundation of China(NSFC Nos.12374386,12374388,12304461,52072349)+1 种基金the Natural Science Foundation of Zhejiang Province(LR22E020004)the China Postdoctoral Science Foundation(2022TQ0365,2023M733436).
文摘Near-infrared(NIR)luminescent metal halide(LMH)materials have attracted great attention in various optoelectronic applications due to their low-temperature solution-processable synthesis,abundant crystallographic/electronic structures,and unique optoelectronic properties.However,some challenges still remain in their luminescence design,performance improvement,and application assign-ments.This review systematically summarizes the development of NIR LMHs through classifying NIR luminescent origins into four major categories:band-edge emission,self-trapped exciton(STE)emission,ion emission,and defect-related emission.The luminescence mechanisms of different types of NIR LMHs are discussed in detail by analyzing typical examples.Reasonable strategies for design-ing and optimizing luminescence/optoelectronic properties of NIR LMHs are summarized,including bandgap engineering,self-trapping state engineering,chemical composition modification,energy transfer,and other auxiliary strategies such as improvement of synthesis scheme and post-processing.Furthermore,application prospects based on the optoelectronic devices are revealed,including phosphor-converted light-emitting diodes(LEDs),electroluminescent LEDs,pho-todetectors,solar cells,and x-ray scintillators,as well as demonstrations of some related practical applications.Finally,the existing challenges and future perspec-tives on the development of NIR LMH materials are critically proposed.This review aims to provide general understanding and guidance for the design of high-performance NIR LMHs materials.
