To obtain the peak response at 532nm, narrow-band response GaA1As photocathodes with two GaAIAs ac- tive layers of different aluminum compositions are designed in consideration of the maximum absorptivity and quantum ...To obtain the peak response at 532nm, narrow-band response GaA1As photocathodes with two GaAIAs ac- tive layers of different aluminum compositions are designed in consideration of the maximum absorptivity and quantum efficiency. The transmission-mode and the corresponding reflective-mode photocathodes are grown by metalorganic chemical vapor deposition. The results indicate that the peak response and the cut-off wavelength occur at 532nm for the two kinds of photocathodes respectively. The response of the reflection-mode photoeath- ode is an order of magnitude higher than that of the transmission-mode photocathode, whereas the better growth quality and the thicker second GaAIAs active layer can improve the transmission-mode response.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61171042 and 61301023the Introducing Talent Scientific Initial Foundation of Nanjing Institute of Technology of China under Grant Nos YKJ201320,YKJ201322,and YKJ201323
文摘To obtain the peak response at 532nm, narrow-band response GaA1As photocathodes with two GaAIAs ac- tive layers of different aluminum compositions are designed in consideration of the maximum absorptivity and quantum efficiency. The transmission-mode and the corresponding reflective-mode photocathodes are grown by metalorganic chemical vapor deposition. The results indicate that the peak response and the cut-off wavelength occur at 532nm for the two kinds of photocathodes respectively. The response of the reflection-mode photoeath- ode is an order of magnitude higher than that of the transmission-mode photocathode, whereas the better growth quality and the thicker second GaAIAs active layer can improve the transmission-mode response.
