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A High-Efficiency Broadband Superconducting Nanowire Single-Photon Detector with a Composite Optical Structure 被引量:1
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作者 顾敏 康琳 +6 位作者 张蜡宝 赵清源 郏涛 万超 徐睿莹 杨小忠 吴培亨 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第3期145-148,共4页
Superconducting nanowire single-photon detectors (SNSPDs) with a composite optical structure composed of phase-grating and optical cavity structures are designed to enhance both the system detection efficiency and t... Superconducting nanowire single-photon detectors (SNSPDs) with a composite optical structure composed of phase-grating and optical cavity structures are designed to enhance both the system detection efficiency and the response bandwidth. Numerical simulation by the finite-difference time-domain method shows that the photon absorption capacity of SNSPDs with a composite optical structure can be enhanced significantly by adjusting the parameters of the phase-grating and optical cavity structures at multiple frequency bands. The absorption capacity of the superconducting nanowires reaches 70%, 72%, 60.73%, 61.7%, 41.2%, and 46.5% at wavelengths of 684, 850, 732, 924, 1256, and 1426nm, respectively. The use of a composite optical structure reduces the total filling factor of superconducting nanowires to only 0.25, decreases the kinetic inductance of SNSPDs, and improves the count rates. 展开更多
关键词 LENGTH A High-Efficiency Broadband Superconducting Nanowire Single-Photon detector with a Composite Optical structure
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A low-cost infrared absorbing structure for an uncooled infrared detector in a standard CMOS process
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作者 申宁 唐祯安 +1 位作者 余隽 黄正兴 《Journal of Semiconductors》 EI CAS CSCD 2014年第3期97-101,共5页
This paper introduces a low-cost infrared absorbing structure for an uncooled infrared detector in a standard 0.5 m CMOS technology and post-CMOS process. The infrared absorbing structure can be created by etching the... This paper introduces a low-cost infrared absorbing structure for an uncooled infrared detector in a standard 0.5 m CMOS technology and post-CMOS process. The infrared absorbing structure can be created by etching the surface sacrificial layer after the CMOS fabrication, without any additional lithography and deposition procedures. An uncooled infrared microbolometer is fabricated with the proposed infrared absorbing structure.The microbolometer has a size of 6565 m2and a fill factor of 37.8%. The thermal conductance of the microbolometer is calculated as 1.3310 5W/K from the measured response to different heating currents. The fabricated microbolometer is irradiated by an infrared laser, which is modulated by a mechanical chopper in a frequency range of 10–800 Hz. Measurements show that the thermal time constant is 0.995 ms and the thermal mass is 1.3210 8J/K. The responsivity of the microbolometer is about 3.03104V/W at 10 Hz and the calculated detectivity is 1.4108cm Hz1=2/W. 展开更多
关键词 infrared absorbing structure CMOS infrared detectors microbolometer low-cost infrared detectors uncooled infrared detectors
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