Large area perovskite solar cell module

The recent dramatic rise in power conversion efficiencies（PCE）of perovskite solar cells has triggered intense research worldwide.However,their practical development is hampered by poor stability and low PCE values with large areas devices.Here,we developed a gas-pumping method to avoid pinholes and eliminate local structural defects over large areas of perovskite film,even for 5 × 5 cm^2 modules,the PCE reached 10.6%and no significant degradation was found after 140 days of outdoor testing.Our approach enables the realization of high performance large-area PSCs for practical application.

High-performance planar heterojunction perovskite solar cells： Preserving long charge carrier diffusion lengths and interracial engineering

We demonstrate that charge carrier diffusion lengths of two classes of perovskites, CH3NH3PbI3-xClx and CH3NH3PbI3, are both highly sensitive to film processing conditions and optimal processing procedures are critical to preserving the long carrier diffusion lengths of the perovskite films. This understanding, together with the improved cathode interface using bilayer-structured electron transporting interlayers of [6,6]-phenyl-C61-butyric acid methyl ester （PCBM）/ZnO, leads to the successful fabrication of highly efficient, stable and reproducible planar heterojunction CH3NH3PbI3-xCl2 solar cells with impressive power-conversion efficiencies （PCEs） up to 15.9%. A 1-square-centimeter device yielding a PCE of 12.3% has been realized, demonstrating that this simple planar structure is promising for large-area devices.

Improving photovoltaic parameters of all-polymer solar cells through integrating two polymeric donors

The incorporation of an additional component into the bulk-heterojunction light-harvesting layer of polymer solar cells has been considered as an effective strategy to enhance photovoltaic performance.Here we demonstrated that the photovoltaic parameters of all-polymer solar cells could be enhanced upon replacing a certain ratio of electron-donating polymer PTz BI-o F with a widely used wide-bandgap polymer donor PM6.The photoluminescent characterizations confirmed the F?rster resonance energy transfer from incorporated PM6 to PTz BI-o F.Moreover,the combination of Fourier-transform photocurrent spectroscopy and electroluminescence external quantum efficiencies measurements demonstrated reduced non-radiative recombination energy loss upon the incorporation of PM6,resulting in a slightly enhanced open-circuit voltage of 0.88 V of the ternary cell regarding the binary PTz BI-o F:PFA1 device.The optimized ternary blend devices comprising of PTz BI-o F:PM6:PFA1 presented an impressively high power conversion efficiency of 16.3%,and the efficiency remains 15%on a device with an enlarged effective area of 1 cm^(2),demonstrating the great potential of these all-PSCs for potential applications.

Enabling monodisperse perovskite phase with buried interface modification toward efficient light-emitting diodes

The performance of perovskite light-emitting diodes(PeLEDs)has been drastically improved recently.Therein,the coexistence of polydisperse perovskite domains has been one worthy subject of study.The crystallization of perovskite is affected by the buried interface character with the bottom contact layer;and the trap states also inherently exist at the buried interface of the perovskite film,which induce the nonradiative recombination and impede the PeLED performance.In this work,we focus on the crystallization modulation of monodisperse perovskite nanodomains toward high-performance PeLEDs.We show that a LiBr pre-modification layer on the bottom substrate induces the formation of monodisperse perovskite phase.In this system,the carrier transferring process deriving from the polydisperse phases is reduced.In addition,the LiBr pre-modification layer at the buried interface minimizes the trap states and enhances the radiative recombination of perovskites.Accordingly,our PeLEDs show a champion external quantum efficiency(EQE)of 25.5%for 4 mm2 device,and 22.9%for 100 mm^(2)device.