We numerically simulated and experimentally studied the interfacialcarbon diffusion between diamond tooland workpiece materials.A diffusion modelwith respect to carbon atoms of diamond toolpenetrating into chips and m...We numerically simulated and experimentally studied the interfacialcarbon diffusion between diamond tooland workpiece materials.A diffusion modelwith respect to carbon atoms of diamond toolpenetrating into chips and machined surface was established.The numericalsimulation results of the diffusion process revealthat the distribution laws of carbon atoms concentration have a close relationship with the diffusion distance,the diffusion time,and the originalcarbon concentration of the work material.In addition,diamond face cutting tests of die steels with different carbon content are conducted at different depth of cuts and feed rates to verify the previous simulation results.The micro-morphology of the chips is detected by scanning electron microscopy.Energy dispersive X-ray analysis was proposed to investigate the change in carbon content of the chips surface.The experimentalresults of this work are of benefit to a better understanding on the diffusion wear mechanism in single crystaldiamond cutting of ferrous metals.Moreover,the experimentalresults show that the diffusion wear of diamond could be reduced markedly by applying ultrasonic vibration to the cutting toolcompared with conventionalturning.展开更多
An attempt is made in this paper to explore the potentiality of semiconducting type-IIb diamond as the base material of double-drift region（DDR） impact avalanche transit time（IMPATT） devices operating at both mill...An attempt is made in this paper to explore the potentiality of semiconducting type-IIb diamond as the base material of double-drift region（DDR） impact avalanche transit time（IMPATT） devices operating at both millimetre-wave（mm-wave） and terahertz（THz） frequencies. A rigorous large-signal（L-S） simulation based on the non-sinusoidal voltage excitation（NSVE） model developed earlier by the authors is used in this study. At first,a simulation study based on avalanche response time reveals that the upper cut-off frequency for DDR diamond IMPATTs is 1.5 THz, while the same for conventional DDR Si IMPATTs is much smaller, i.e. 0.5 THz. The L-S simulationresultsshowthattheDDRdiamondIMPATTdevicedeliversapeakRFpowerof7.79Wwithan18.17%conversion efficiency at 94 GHz; while at 1.5 THz, the peak power output and conversion efficiency decrease to6.19mWand8.17%respectively,taking50%voltagemodulation.AcomparativestudyofDDRIMPATTsbasedon diamond and Si shows that the former excels over the later as regards high frequency and high power performance at both mm-wave and THz frequency bands. The effect of band to band tunneling on the L-S properties of DDR diamond and Si IMPATTs has also been studied at different mm-wave and THz frequencies.展开更多
基金Funded by the National High-Tech R&D Program(863 Program)of China(No.2012AA040405)
文摘We numerically simulated and experimentally studied the interfacialcarbon diffusion between diamond tooland workpiece materials.A diffusion modelwith respect to carbon atoms of diamond toolpenetrating into chips and machined surface was established.The numericalsimulation results of the diffusion process revealthat the distribution laws of carbon atoms concentration have a close relationship with the diffusion distance,the diffusion time,and the originalcarbon concentration of the work material.In addition,diamond face cutting tests of die steels with different carbon content are conducted at different depth of cuts and feed rates to verify the previous simulation results.The micro-morphology of the chips is detected by scanning electron microscopy.Energy dispersive X-ray analysis was proposed to investigate the change in carbon content of the chips surface.The experimentalresults of this work are of benefit to a better understanding on the diffusion wear mechanism in single crystaldiamond cutting of ferrous metals.Moreover,the experimentalresults show that the diffusion wear of diamond could be reduced markedly by applying ultrasonic vibration to the cutting toolcompared with conventionalturning.
文摘An attempt is made in this paper to explore the potentiality of semiconducting type-IIb diamond as the base material of double-drift region（DDR） impact avalanche transit time（IMPATT） devices operating at both millimetre-wave（mm-wave） and terahertz（THz） frequencies. A rigorous large-signal（L-S） simulation based on the non-sinusoidal voltage excitation（NSVE） model developed earlier by the authors is used in this study. At first,a simulation study based on avalanche response time reveals that the upper cut-off frequency for DDR diamond IMPATTs is 1.5 THz, while the same for conventional DDR Si IMPATTs is much smaller, i.e. 0.5 THz. The L-S simulationresultsshowthattheDDRdiamondIMPATTdevicedeliversapeakRFpowerof7.79Wwithan18.17%conversion efficiency at 94 GHz; while at 1.5 THz, the peak power output and conversion efficiency decrease to6.19mWand8.17%respectively,taking50%voltagemodulation.AcomparativestudyofDDRIMPATTsbasedon diamond and Si shows that the former excels over the later as regards high frequency and high power performance at both mm-wave and THz frequency bands. The effect of band to band tunneling on the L-S properties of DDR diamond and Si IMPATTs has also been studied at different mm-wave and THz frequencies.
