Texturing of diamond wire cut wafers using a standard wafer etch process chemistry has always been a challenge in solar cell manufacturing industry. This is due to the change in surface morphology of diamond wire cut ...Texturing of diamond wire cut wafers using a standard wafer etch process chemistry has always been a challenge in solar cell manufacturing industry. This is due to the change in surface morphology of diamond wire cut wafers and the abundant presence of amorphous silicon content, which are introduced from wafer manufacturing industry during sawing of multi-crystalline wafers using ultra-thin diamond wires. The industry standard texturing process for multi-crystalline wafers cannot deliver a homogeneous etched silicon surface, thereby requiring an additive compound, which acts like a surfactant in the acidic etch bath to enhance the texturing quality on diamond wire cut wafers. Black silicon wafers on the other hand require completely a different process chemistry and are normally textured using a metal catalyst assisted etching technique or by plasma reactive ion etching technique. In this paper, various challenges associated with cell processing steps using diamond wire cut and black silicon wafers along with cell electrical results using each of these wafer types are discussed.展开更多
Great interest in surface acoustic wave device based on diamond is attracted because diamond has the highest surface acoustic wave velocity of all substrates.In this paper,400 nm ZnO film was deposited on polycrystall...Great interest in surface acoustic wave device based on diamond is attracted because diamond has the highest surface acoustic wave velocity of all substrates.In this paper,400 nm ZnO film was deposited on polycrystalline diamond wafer by magnetron sputtering.The experimental results indicate that highly c-axis oriented and fine-grain polycrystalline ZnO films have been obtained.100 nm Al thin film was deposited on ZnO/diamond by electron evaporation.Standard interdigital-transducers with the electrodes of 1.0μm width were fabricated on the Al film using photolithography and reactive ion etching (RIE) processes.A 2.48 GHz longitudinally-coupled double-mode surface acoustic wave filter has been successfully fabricated using the Al/ZnO/diamond structure.展开更多
文摘Texturing of diamond wire cut wafers using a standard wafer etch process chemistry has always been a challenge in solar cell manufacturing industry. This is due to the change in surface morphology of diamond wire cut wafers and the abundant presence of amorphous silicon content, which are introduced from wafer manufacturing industry during sawing of multi-crystalline wafers using ultra-thin diamond wires. The industry standard texturing process for multi-crystalline wafers cannot deliver a homogeneous etched silicon surface, thereby requiring an additive compound, which acts like a surfactant in the acidic etch bath to enhance the texturing quality on diamond wire cut wafers. Black silicon wafers on the other hand require completely a different process chemistry and are normally textured using a metal catalyst assisted etching technique or by plasma reactive ion etching technique. In this paper, various challenges associated with cell processing steps using diamond wire cut and black silicon wafers along with cell electrical results using each of these wafer types are discussed.
文摘Great interest in surface acoustic wave device based on diamond is attracted because diamond has the highest surface acoustic wave velocity of all substrates.In this paper,400 nm ZnO film was deposited on polycrystalline diamond wafer by magnetron sputtering.The experimental results indicate that highly c-axis oriented and fine-grain polycrystalline ZnO films have been obtained.100 nm Al thin film was deposited on ZnO/diamond by electron evaporation.Standard interdigital-transducers with the electrodes of 1.0μm width were fabricated on the Al film using photolithography and reactive ion etching (RIE) processes.A 2.48 GHz longitudinally-coupled double-mode surface acoustic wave filter has been successfully fabricated using the Al/ZnO/diamond structure.
