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A UTD SOLUTION FOR THE RADIATED FIELD FROM MONOPOLE ON A CONDUCTING CYLINDER SURFACE WITH A DIELECTRIC COATING
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作者 Ke Hengyu Hou Jiechang 《Wuhan University Journal of Natural Sciences》 CAS 1998年第2期168-168,共1页
A can0nical problem is investigated for high frequency electromagnetic radiation from amonopo1e on a conducting cylinder with c0ating-At first, the exact solution of this problem is given interms of Dyadic Green's... A can0nical problem is investigated for high frequency electromagnetic radiation from amonopo1e on a conducting cylinder with c0ating-At first, the exact solution of this problem is given interms of Dyadic Green's function method. Then, using Watson transformation and high frequency asymptotic approximate technique to the exact soluton, a UTD soultion is obtained. The radiation field excitedby a monopole is expressed in terms of the compound Fock' S functions (CFF), which reduce to the geomertrical optics result in the deep lit region and the creeping waves in the shadow region. 展开更多
关键词 conducting cylinder with a dielectric coating monopole antenna high-frequency approximate technique diffraction theory of convex surface compound Fock function
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An ultra-wideband pattern reconflgurable antenna based on graphene coating 被引量:2
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作者 姜彦南 袁锐 +3 位作者 高喜 王娇 李思敏 林诒玉 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第11期625-631,共7页
An ultra-wideband pattern reconfigurable antenna is proposed.The antenna is a dielectric coaxial hollow monopole with a cylindrical graphene-based impedance surface coating.It consists of a graphene sheet coated onto ... An ultra-wideband pattern reconfigurable antenna is proposed.The antenna is a dielectric coaxial hollow monopole with a cylindrical graphene-based impedance surface coating.It consists of a graphene sheet coated onto the inner surface of a cylindrical substrate and a set of independent polysilicon DC gating pads mounted on the outside of the cylindrical substrate.By changing the DC bias voltages to the different gating pads,the surface impedance of the graphene coating can be freely controlled.Due to the tunability of graphene's surface impedance,the radiation pattern of the proposed antenna can be reconfigured.A transmission line method is used to illustrate the physical mechanism of the proposed antenna.The results show that the proposed antenna can reconfigure its radiation pattern in the omnidirectional mode with the relative bandwidth of 58.5% and the directional mode over the entire azimuth plane with the relative bandwidth of 67%. 展开更多
关键词 wideband antenna impedance bandwidth directional illustrate hollow dielectric coated outside
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The investigation of DARC etch back in DRAM capacitor oxide mask opening 被引量:1
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作者 Jianqiu Hou Zengwen Hu +5 位作者 Kuowen Lai Yule Sun Bo Shao Chunyang Wang Xinran Liu Karson Liu 《Journal of Semiconductors》 EI CAS CSCD 2021年第7期88-92,共5页
Opening the silicon oxide mask of a capacitor in dynamic random access memory is a critical process on a capacitive coupled plasma(CCP)etch tool.Three steps,dielectric anti-reflective coating(DARC)etch back,silicon ox... Opening the silicon oxide mask of a capacitor in dynamic random access memory is a critical process on a capacitive coupled plasma(CCP)etch tool.Three steps,dielectric anti-reflective coating(DARC)etch back,silicon oxide etch and strip,are contained.To acquire good performance,such as low leakage current and high capacitance,for further fabricating capacitors,we should firstly optimize DARC etch back.We developed some experiments,focusing on etch time and chemistry,to evalu-ate the profile of a silicon oxide mask,DARC remain and critical dimension.The result shows that etch back time should be con-trolled in the range from 50 to 60 s,based on the current equipment and condition.It will make B/T ratio higher than 70%mean-while resolve the DARC remain issue.We also found that CH_(2)F_(2) flow should be~15 sccm to avoid reversed CD trend and keep in-line CD. 展开更多
关键词 dynamic random access memory(DRAM) oxide mask open of capacitor capacitive coupled plasma(CCP)etch dielectric anti-reflective coating(DARC) etch back(EB)
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