Nonlinear parametric interactions in ion-implanted semiconductor plasmas having strain-dependent dielectric constants

We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants（SDDC）. High-dielectric-constant materials are technologically important because of their nonlinear properties. We find that the third-order susceptibility varies in the range 10^-14--10^-12m^2·V^-2 for ion-implanted semiconductor plasmas, which is in good agreement with previous results. It is found that the presence of SDDC in ion-implanted semiconductor plasma modifies the characteristic properties of the material.

Study of Structural, Optical, Electrical and Dielectric Properties of Gd-Doped ZnO Composites Synthesized by Solid State Reaction Method

In this manuscript, we are reporting structural, bonding, optical, dielectric, and electrical properties of Gd-doped ZnO composite samples (Zn1−xGdxO, x = 0, 0.05, 0.10) prepared by solid-state reaction method. XRD spectra confirm the wurtzite hexagonal phase with a grain size distribution of 42 - 47 nm. The FT-IR spectra confirm bonding behavior like Zn-O, O=C=O, and O-H stretching modes. FESEM micrographs show that the grains of crystallites possess nearly spherical morphology. Optical absorption spectra confirm that the optical band gap decreases systematically from 3.19 eV to 3.15 eV for x = 0.0 to x = 0.10 samples. For all samples, PL spectra exhibited near-band emission, blue emission, and green emission peaks. The dielectric constant decreases as the applied frequency increases. Hall effect results show that with increasing doping concentration of Gd, mobility and resistivity increase while bulk concentration decreases. Current-Voltage study shows that current increases when temperature is increased. Rare earth-doped ZnO is potential material used for optoelectronics and spintronics device applications. Properties of Gd-doped ZnO are studied by various research groups, but dielectric studies are limitedly reported. Therefore, the present research work aims to study the change of electrical, optical, and dielectric properties of Gd-doped ZnO for device applications.

Chemical Bonds and Dielectric Constants of REM（RE＝Rare Earth，M＝N，P，As，Sb）Crystals

By using Pillips and van Vechten theory, the chemical bond parameters and dielectric constants of REM (RE=rare earth,M=N,P,As,Sb) crystals were calculated.The values calculated of dielectric constants agree with the experimental values.

Using DelPhi Capabilities to Mimic Protein’s Conformational Reorganization with Amino Acid Specific Dielectric Constants

Many molecular events are associated with small or large conformational changes occurring in the corresponding proteins.Modeling such changes is a challenge and requires significant amount of computing time.From point of view of electrostatics,these changes can be viewed as a reorganization of local charges and dipoles in response to the changes of the electrostatic field,if the cause is insertion or deletion of a charged amino acid.Here we report a large scale investigation of modeling the changes of the folding energy due to single mutations involving charged group.This allows the changes of the folding energy to be considered mostly electrostatics in origin and to be calculated with DelPhi assigning residue-specific value of the internal dielectric constant of protein.The predicted energy changes are benchmarked against experimentally measured changes of the folding energy on a set of 257 single mutations.The best fit between experimental values and predicted changes is used to find out the effective value of the internal dielectric constant for each type of amino acid.The predicted folding free energy changes with the optimal,amino acid specific,dielectric constants are within RMSD=0.86 kcal/mol from experimentally measured changes.

Polybenzoxazine/organosilicon composites with low dielectric constant and dielectric loss

The evolution of electronic communication technology raises higher requirements for low dielectric constant(low-k)materials.For this,a benzoxazine functional organosilicon(HP-aptes)with dense Si—O—Si crosslinking networks and large sterically hindered tert-butyl groups was prepared by the sol–gel method.Then,a series of polybenzoxazine composites(PPHP)were prepared from intrinsically low dielectric constant bis-functional benzoxazine monomer(P-aptmds)and HP-aptes.The double crosslinking networks of polybenzoxazine and organosilicon further increased the crosslinking density and decreased the dipole density of composites,which endowed the composites with enhanced low-k properties.When the content of HP-aptes is 30%(mass),the crosslinking density was 2.05×10^(-3)mol·cm^(-3),while that of PP-aptmds was 3.31×10^(-3)mol·cm^(-3).In addition,the dielectric constant and dielectric loss of PPHP composite at 1 MHz could reach 2.61 and 0.0056,respectively.

A Decisive Study on Dielectric Response of Bi2O3/Polystyrene &Bi2O3/PVDF Composite as Flexible Electrodes for Energy Storage

In this manuscript a comparative study on Bi2O3/polystyrene and Bi2O3/PVDF composites has been executed via analysis of structural, bonding, surface morphology and dielectric response of composites for energy storage. The composites have been synthesized using solution cast method by varying concentrations of Bi2O3 (BO = 1 - 5 mw%) into polystyrene (PS) and polyvinylidene fluoride (PVDF) polymers respectively. X-ray diffraction confirms the generation of crystallinity, Fourier transform infrared (FT-IR) spectroscopy confirms bonding behavior and scanning electron microscopy (SEM) confirms uniform distribution of Bi2O3 (BO) in PS and PVDF polymers. Impedance spectroscopy has been employed for determination of dielectric response of the fabricated composites. The dielectric constant has been found to be increased as 1.4 times of pristine PS to BO5%PS95% composites and 1.8 times of pristine PVDF to BO5%PVDF95% composites respectively. These high dielectric composite electrodes are useful for flexible energy storage devices.

Effect of Cu ion substitution on structural and dielectric properties of Ni-Zn ferrites

A series of Cu-substituted Ni_(0.5-x)Cu_xZn_(0.5)Fe_2O_4(x=0.12,0.16,0.20,0.24 and 0.28) spinel ferrites were prepared by conventional ceramic method to investigate the effects of Cu compositional variation on the structure and dielectric properties.XRD patterns demonstrate that all the samples are crystallized in single-phase cubic spinel structure and the lattice constant increases with increasing Cu content.White grains observed by SEM are Cu-rich phase.The dielectric constant versus frequency curve displays a normal dielectric behavior of spinel ferrites.While the frequency dependence of dielectric loss tangent is found to be abnormal,exhibiting a peak at certain frequency for all Cu-substituted Ni-Zn ferrites.A maximum of the resistivity is observed at x=0.2 due to the decrease of hopping electrons between Fe^(2+) and Fe^(3+) in per unit volume,which is in contrast with the Cu content dependence of dielectric constant and dielectric loss.

Synthesis,Structure,and Luminescent and Dielectric Properties of Two Novel 1D Chains Based on a T-Shaped Tripodal Ligand 4-(4,5-Dicarboxy-1H-imidazol-2-yl)pyridine Loxide

Two 1D chain metal-organic framework complexes, {Co[（C10H5N3O5）- （H2O）2？H2O]}n （1） and {Cd[（C10H5N3O5）（H2O）2]}n （2）, based on a T-shaped tripodal ligand 4-（4,5-dicarboxy- 1H-imidazol-2-yl） pyridine 1-oxide （H3DCImPyO） have been reacted under hydrothermal conditions, and were characterized by single-crystal X-ray structure analysis, fluorescent analysis and thermal gravimetric analysis. According to single-crystal X-ray determination, complex 1 crystallizes in the monoclinic system, space group P21/n with a = 9.4930（13）, b = 13.2024（18）, c = 10.5203（14） A^°, β = 98.402（2）°, Z = 4, V = 1304.4（3）A^°3; and complex 2 crystallizes in the monoclinic system, space group C2/c with a = 13.557（3）, b = 13.568（3）, c = 6.7804（13） A^°, β = 105.095（2）°, Z = 4 and V = 1204.2（4） A^°3. Fluorescent analysis of complex 2 showed an intense emission band at 466 nm when the exciting radiation was set at 360 nm. Dielectric constants of complexes 1 and 2 were measured at different frequencies with temperature variation.

Synthesis and Characterization of SiCOF/a-C∶F Double-Layer Films with Low Dielectric Constant for Copper Interconnects~*

A novel double-layer film of SiCOF/a-C ： F with a low dielectric constant is deposited using a PECVD system. The chemical structure of the film is characterized with Fourier transform infrared spectroscopy （FTIR）. The measurements of the film refractive index reveal that the optical frequency dielectric constant （n^2） of the film is almost constant as a function of air exposure time, however, with increasing annealing temperature, the value of n^2 for the film decreases. Possible mechanisms are discussed in detail. The analysis of SIMS profiles for the metal-insulator-silicon structures reveal that in the Al/a-C ： F/Si structure,the annealing causes a more rapid diffusion of F in AI in comparison with C, but there is no obvious difference in Si. In addition, no recognizable verge exists between SiCOF and a-C ： F films,and the SiCOF film acts as a barrier against the diffusion of carbon into the aluminum layer.

Why Sustainable Porous Carbon Should be Further Explored as Radar-Absorbing Material? A Comparative Study with Different Nanostructured Carbons

Radar Absorbing Materials(RAM)are a class of composites that can attenuate incident electromagnetic waves to avoid radar detection.Most carbon allotropes that have the potential to be used as RAM are either carbon nano-tubes(CNTs),graphene,carbon black(CB)and ultimately,sustainable porous carbon(SPC).Here,black wattle bark waste(following tannin extraction)was used as a sustainable source to produce SPC made from biomass waste.It was characterized and used as afiller for a silicone rubber matrix to produce aflexible RAM.The elec-tromagnetic performance of this composite was compared with composites made with commercial CB and CNT through reflection loss(RL),where-10 dB is equivalent to 90%of attenuation.These composites were evaluated in single-layer,double-layer,and as radar absorbing structures(RAS)with the aim of improving their effective absorption bandwidth(EAB)performances and a reduction in costs.The CNT composite presented a RL of-26.85 dB at 10.89 GHz and an EAB of 2.6 GHz with a 1.9 mm thickness,while the double-layer structures using CNT and SPC provided a RL of-19.74 dB at 10.75 GHz and an EAB of 2.51 GHz.Furthermore,the double-layer structures are~42%cheaper than the composite using only CNT since less material is used.Finally,the largest EAB was achieved with a RAS using SPC,reaching~2.8 GHz and a RL of-49.09 dB at 10.4 GHz.Summarizing,SPC made of black wattle bark waste can be a competitive,alternative material for use as RAM and RAS since it is cheaper,sustainable,and suitable for daily life uses such as absorbers for anechoic chambers,sensors,and elec-tromagnetic interference shields for electronics,wallets,vehicles,and others.

LINEAR AND NONLINEAR DIELECTRIC PROPERTIES OF PARTICULATE COMPOSITES AT FINITE CONCENTRATION

An analytical method was proposed dielectric properties for particulate composites. to calculate effective linear and nonlinear The method is based on an approximate solution of two-particle interaction problem, and it can be applied to relatively high volume concentration of particles （up to 50%）. Nonlinear dielectric property was also examined by means of secant method. It is found that for low applied electric filed the proposed method is close to Stroud and Hui＇s method and for high applied electric filed it is close to Yu＇s method.

Effects of Cerium Doping at Ti Sites and Europium Doping at Ba Sites on Dielectric Properties of BaTiO_3 Ceramics

Two special rare earth elements cerium and europium were chosen to conduct chemical modification of the BaTiO3 structure. The cold-pressing ceramic processing technique was used to prepare barium titanate ceramics doped with Ce at Ti sites and with Eu at Ba sites on the base of formulas Ba （ Ti1 -x Cex ） O3 （x = 0. 05, 0. 10 ） （CBT） and （ Ba1-y Euy ） Ti1-x/8O3 （ y = 0. 05, 0. 10） （EBT）. Associated with structures and microstructures, the effects of cerium and europium doping on dielectric properties of BaTiO3 ceramics were discussed. The CBT ceramics exhibit a pseudocubic perovskite structure, while the EBT ceramics exhibit a tetragonal perovskite structure with the exception of the existence of a small percentage of the Eu2Ti2O7 phase. The Curie peak of BaTiO3 shifts towards room temperature at rates of 3 ℃/mol Ce atoms and 10 ℃/mol Eu atoms（ Eu≤5% ）, respectively. Compared with the CBT ceramics, the EBT ceramics show significant advantages, such as a narrow fine grain size distribution（ 1 μm）, a lower porosity and a higher density（5.85 g/cm^3）, more stable dielectric-temperature dependence（ ε′= 1600-1800 at t 〈 50℃ ） and a lower dissipation factor（ 〈 0. 05 ）. The stability of dielectric constant with frequency in BaTiO3 can extend to 107 Hz due to Ce and Eu doping.

Influence of soaking time on nonlinear electrical behavior and dielectric properties of TiO_2-based varistor ceramics

The influence of soaking time on the nonlinear electrical behavior and dielectric properties of TiO2-based varistor ceramics was investigated. Based on single sintering process, six disk samples of （Sr, Bi, Si, Ta）-doped TiO2-based varistor ceramics were fabricated by sintering at 1 250 ℃ for 0.5-5.0 h. The samples were characterized by X-ray diffraction, voltage-current characteristics, energy spectra, metallographs, breakdown voltages, and apparent dielectric constant. It is found that the breakdown electrical field intensity at a current density of 10 mA/cma decreases from 5.5 to 4.1 V/mm first and then increases to 7.0 V/mm, the nonlinear coefficient increases from 2.39 to 2.62 first and then decreases to 2.42, and the apparent dielectric constant increases from 98 200 to 1l5 049 first and then decreases to 73 865 with the soaking time increasing from 0.5 to 5.0 h. These indicate that the optimal soaking time is 2.0-3.0 h considering both nonlinear electrical behavior and dielectric properties.

The Influence of Free Water Content on Dielectric Properties of Alkali Active Slag Cement Paste

The dielectric performance of alkali activated slag （AAS） cement paste was investigated in the frequency range of 1 to 1000 MHz. The experimental results showed the unstable dielectric properties of harden paste were mostly influenced by the fraction of free water in paste or absorbed water from ambient, but not including hydration water and microstructure. The free water was completely eliminated by heat treatment at 105 ℃ about 4 hours, and then its dielectric loss was depressed; but with the exposure time in air increasing, the free water adsorption in ambient air made the dielectric property of harden cement paste to be bad. The temperature and relative humidity of environment was the key factors of free water adsorption; hence, if the influence of free water on dielectric constant was measured or eliminated, the cement-based materials may be applied in humidity sensitive materials or dielectric materials domains.

Influence of Temperature and Frequency on Microwave Dielectric Properties of Lunar Regolith Simulant

The dielectric constant of the lunar regolith can directly influence the reflection coefficient and the trans-mission coefficient of the Moon′s surface, and plays an important role in the Moon research. In order to study the di-electric properties of the lunar regolith, the lunar regolith simulant was made according to the making procedure of the CAS-1 simulant made by Chinese Academy of Sciences. Then the dielectric constants of the lunar regolith simulant were measured with 85070E Aiglent Microwave Network Analyzer in the frequency ranging from 0.2 GHz to 20.0 GHz and at temperature of 25.1℃, 17.7℃, 13.1℃, 11.5℃, 9.6℃, 8.0℃, 4.1℃, -0.3℃, -4.7℃, -9.5℃, -18.7℃, -27.7℃, and -32.6℃, respectively. The Odelevsky model was employed to remove the influence of water in the air on the final effective dielectric constants. The results indicate that frequency and temperature have apparent influences on the dielectric constants of the lunar regolith simulant. The real parts of the dielectric constants increase fast over the range of 0.2 GHz to 3.0 GHz, but decrease slowly over the range of 4.0 GHz to 20.0 GHz. The opposite phenomenon occurs in the imaginary parts. The influences of the frequency and temperature on the brightness temperature were also estimated based on the radiative transfer equation. The result shows that the variation of the frequency and temperature results in great changes of the microwave brightness temperature emitting from the lunar regolith.

Plasma-assisted ammonia synthesis in a packed-bed dielectric barrier discharge reactor:roles of dielectric constant and thermal conductivity of packing materials

In this article,plasma-assisted NH;synthesis directly from N;and H;over packing materials with different dielectric constants(BaTiO_(2),TiO_(2) and SiO_(2))and thermal conductivities(Be O,Al N and Al_(2)O_(2))at room temperature and atmospheric pressure is reported.The higher dielectric constant and thermal conductivity of packing material are found to be the key parameters in enhancing the NH;synthesis performance.The NH;concentration of 1344 ppm is achieved in the presence of BaTiO_(2),which is 106%higher than that of SiO_(2),at the specific input energy(SIE)of 5.4 k J·l^(-1).The presence of materials with higher dielectric constant,i.e.BaTiO_(2) and TiO_(2)in this work,would contribute to the increase of electron energy and energy injected to plasma,which is conductive to the generation of chemically active species by electron-impact reactions.Therefore,the employment of packing materials with higher dielectric constant has proved to be beneficial for NH;synthesis.Compared to that of Al_(2)O_(3),the presence of Be O and Al N yields 31.0%and 16.9%improvement in NH;concentration,respectively,at the SIE of5.4 k J·l^(-1).The results of IR imaging show that the addition of Be O decreases the surface temperature of the packed region by 20.5%to 70.3℃ and results in an extension of entropy increment compared to that of Al_(2)O_(3),at the SIE of 5.4 k J·l^(-1).The results indicate that the presence of materials with higher thermal conductivity is beneficial for NH;synthesis,which has been confirmed by the lower surface temperature and higher entropy increment of the packed region.In addition,when SIE is higher than the optimal value,further increasing SIE would lead to the decrease of energy efficiency,which would be related to the exacerbation in reverse reaction of NH;formation reactions.

Enhanced dielectric and optical properties of nanoscale barium hexaferrites for optoelectronics and high frequency application

M-type barium hexaferrites with chemical composition Ba1-xDyxFe12-yCryO19(x = 0.0, 0.1, 0.2, and y =0.0, 0.4, 0.5) were synthesized via sol–gel auto-combustion method. The samples were pre-sintered at 400℃ for 3 h and sintered at 950℃ for 5 h. The changes in the structural, dielectric, and optical properties were studied after the substitution of Dy3+and Cr3+ions. X-ray diffraction(XRD) analysis confirms the formation of single phase hexaferrites with the absence of secondary phase. FTIR analysis gives an idea of the formation of hexaferrites with the appearance of two peaks at 438 cm-1and 589 cm-1. The field emission scanning electron micrographs(FESEM) show a combination of crystallites with large shapes close to hexagonal platelet-like shape and others with rice or rod-like shapes, whereas EDX and elemental analysis confirm the stoichiometry of prepared samples. The calculated band gap from UV-vis NIR spectroscopy spectra was found to decreases with increase in Dy3+–Cr3+substitution. The dielectric properties were explained on the basis of Maxwell–Wagner model. Enhancement of dielectric constant at higher frequencies was observed in all the samples. Low dielectric loss is also observed in all the samples and Cole–Cole plot shows that grain boundary resistance(Rgb) contribute most to the dielectric properties. The prepared samples exhibit properties that could be useful for optoelectronics and high frequency application.

Dynamic characteristics of charging effects on the dielectric constant due to E-beam irradiation:a numerical simulation

A series of synthetic variations of material intrinsic properties always come with charging phenomena due to electron beam irradiation.The effects of charging on the dielectric constant will influence the charging dynamic in return.In this paper,we propose a numerical simulation for investigating the dynamic characteristics of charging effects on the dielectric constant due to electron beam irradiation.The scattering process between electrons and atoms is calculated considering elastic and inelastic collisions via the Rutherford model and the fast secondary electron model,respectively.Internal charge drift due to E-field,density gradient caused diffusion,charges trap by material defect,free electron and hole neutralization,and variation in the internal dielectric constant are considered when simulating the transport process.The dynamics of electron and hole distributions and charging states are demonstrated during E-beam irradiation.As a function of material nonlinear susceptibility and primary energy,the dynamics of charging states and dielectric constants are then presented in the charging process.It is found that the variation in the internal dielectric constant is more with respect to the depth and irradiation time.Material with a larger nonlinear susceptibility corresponds a faster charging enhancement.In addition,the effective dielectric constant and the surface potential have a linear relationship in the charging balance.Nevertheless,with shrinking charging affect range,the situation with a higher energy primary electron comes with less dielectric constant variation.The proposed numerical simulation mode of the charging process and the results presented in this study offer a comprehensive insight into the complicated charging phenomena in electron irradiation related fields.

Fabrication of BaTiO3/Epoxy Composites Exhibiting Large Dielectric Constant, Low Dielectric Loss and High Flexural Strength

BaTiO3/epoxy composites consisting of two three-dimensionally interpenetrating networks of BaTiO3 and epoxy phases were prepared using a new approach. The BaTiO3/epoxy composites exhibit a colossal dielectric constant, low dielectric loss and high flexural strength. In the BaTiO3 networks, chemically bonded grain boundaries between neighboring BaTiO3 grains were established, and they are responsible for the colossal dielectric constant and high flexural strength of the BaTiO3/epoxy composites. Furthermore, unlike the conventional ceramic/polymer composites, this approach also makes high loadings of BaTiO3 contents possible for the BaTiO3/epoxy composites without compromising their high flexural strength.

Alumina/Polyimide Composite Porous Nanosolid:Dielectric Characteristics and Compressive Strength

Al2O3 porous nanosolid was prepared via solvothermal hot-press（SHP） method.The dielectric constant of Al2O3 porous nanosolid is as low as 2.34,while its compressive strength is very poor.In order to improve the compressive strength and maitain low dielectric constant,polyimide was introduced to prepare Al2O3 /polyimide composite porous nanosolid.Compared to Al2O3 porous nanosolid,Al2O3 /polyimide composite porous nanosolid possesses much higher compressive strength,which reaches its saturation value when the mass loading of polyimide is 7.75%.In addition,the in situ Fourier transformation infrared（FTIR） monitoring result reveals that Al2O3 /polyimide composite porous nanosolid is stable up to 400 °C.