This paper studies the performance of a submillimeter wave antenna operating between frequencies 0.1 THz and 10 THz with a 4-cyano-4-pentylbiphenyl[5CB]substrate.Since the size and shape of the antenna impact its gain...This paper studies the performance of a submillimeter wave antenna operating between frequencies 0.1 THz and 10 THz with a 4-cyano-4-pentylbiphenyl[5CB]substrate.Since the size and shape of the antenna impact its gain/directivity,resonant frequency,bandwidth,and efficiency,the two antenna types considered in this paper are:(a)Rectangular Patch Antenna(RPA),and(b)Cylindrical Dielectric Resonator Antenna(CDRA).Here a submillimeter wave antenna is compared with a millimeter wave(a few GHz to 100 GHz)antenna.These popular mmwave antennas are chosen for the submillimeter wave antenna in order to understand changes in their performance as the result of changes in their geometrical shape.FEldberechnung bei Korpern mit beliebiger Oberflache(FEKO)software is used for the design and calculation of the Three-Dimensional(3D)ElectroMagnetic(EM)patterns.This paper also concentrates on the design and analysis of a massive submillimeter wave Multiple-Input Multiple-Output(MIMO)(8 by 8)RPA and CDRA.展开更多
An analytical direct tunneling gate current model for cylindrical surrounding gate（CSG） MOSFETs with high-k gate stacks is developed. It is found that the direct tunneling gate current is a strong function of the g...An analytical direct tunneling gate current model for cylindrical surrounding gate（CSG） MOSFETs with high-k gate stacks is developed. It is found that the direct tunneling gate current is a strong function of the gate＇s oxide thickness, but that it is less affected by the change in channel radius. It is also revealed that when the thickness of the equivalent oxide is constant, the thinner the first layer, the smaller the direct tunneling gate current.Moreover, it can be seen that the dielectric with a higher dielectric constant shows a lower tunneling current than expected. The accuracy of the analytical model is verified by the good agreement of its results with those obtained by the three-dimensional numerical device simulator ISE.展开更多
文摘This paper studies the performance of a submillimeter wave antenna operating between frequencies 0.1 THz and 10 THz with a 4-cyano-4-pentylbiphenyl[5CB]substrate.Since the size and shape of the antenna impact its gain/directivity,resonant frequency,bandwidth,and efficiency,the two antenna types considered in this paper are:(a)Rectangular Patch Antenna(RPA),and(b)Cylindrical Dielectric Resonator Antenna(CDRA).Here a submillimeter wave antenna is compared with a millimeter wave(a few GHz to 100 GHz)antenna.These popular mmwave antennas are chosen for the submillimeter wave antenna in order to understand changes in their performance as the result of changes in their geometrical shape.FEldberechnung bei Korpern mit beliebiger Oberflache(FEKO)software is used for the design and calculation of the Three-Dimensional(3D)ElectroMagnetic(EM)patterns.This paper also concentrates on the design and analysis of a massive submillimeter wave Multiple-Input Multiple-Output(MIMO)(8 by 8)RPA and CDRA.
基金Project supported by the National Natural Science Foundation of China(Nos.61076101,61204092)the Fundamental Research Fundsfor the Central Universities of China(No.K50511250001)
文摘An analytical direct tunneling gate current model for cylindrical surrounding gate（CSG） MOSFETs with high-k gate stacks is developed. It is found that the direct tunneling gate current is a strong function of the gate＇s oxide thickness, but that it is less affected by the change in channel radius. It is also revealed that when the thickness of the equivalent oxide is constant, the thinner the first layer, the smaller the direct tunneling gate current.Moreover, it can be seen that the dielectric with a higher dielectric constant shows a lower tunneling current than expected. The accuracy of the analytical model is verified by the good agreement of its results with those obtained by the three-dimensional numerical device simulator ISE.
