Electrical and dielectric characterization of Au/ZnO/n-Si device depending frequency and voltage

Au/Zn O/n-type Si device is obtained using atomic layer deposition（ALD） for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state（Nss）, barrier height（Φb）, series resistance（Rs）, donor concentration（Nd）, and dielectric characterization depending on frequency or voltage. These parameters are acquired by use of impedance spectroscopy measurements at frequencies ranging from 10 k Hz to 1 MHz and the direct current（DC） bias voltages in a range from-2 V to ＋2 V at room temperature are used. The main electrical parameters and dielectric parameters,such as dielectric constant（ε＂）, dielectric loss（ε＂）, loss tangent（tan δ）, the real and imaginary parts of electric modulus（M and M）, and alternating current（AC） electrical conductivity（σ） are affected by changing voltage and frequency. The characterizations show that some main electrical parameters usually decrease with increasing frequency because charge carriers at surface states have not enough time to fallow an external AC signal at high frequencies, and all dielectric parameters strongly depend on the voltage and frequency especially in the depletion and accumulation regions. Consequently, it can be concluded that interfacial polarization and interface charges can easily follow AC signal at low frequencies.

Effect of actuating frequency on plasma assisted detonation initiation

Aiming at studying the influence of actuating frequency on plasma assisted detonation initiation by alternating current dielectric barrier discharge, a loosely coupled method is used to simulate the detonation initiation process of a hydrogenoxygen mixture in a detonation tube at different actuating frequencies. Both the discharge products and the detonation forming process which is assisted by the plasma are analyzed. It is found that the patterns of the temporal and spatial distributions of discharge products in one cycle are not changed by the actuating frequency. However, the concentration of every species decreases as the actuating frequency rises, and atom O is the most sensitive to this variation, which is related to the decrease of discharge power. With respect to the reaction flow of the detonation tube, the deflagration-todetonation transition（DDT） time and distance both increase as the actuating frequency rises, but the degree of effect on DDT development during flow field evolution is erratic. Generally, the actuating frequency affects none of the amplitude value of the pressure, temperature, species concentration of the flow field, and the combustion degree within the reaction zone.

Optical,UV-Vis spectroscopy studies,electrical and dielectric properties of transition metal-based of the novel organic–inorganic hybrid(C_(6)H_(10)N_(2))(Hg_(2)Cl_(5))_(2)·3H_(2)O

In this work,we are interested in the synthesis of new hybrid material(C_(6)H_(10)N_(2))(Hg_(2)Cl_(5))_(2)·3H_(2)O grown by hydrothermal methods.X-ray diffraction indicates that this compound crystallizes at 150(2)K in the monoclinic system with C2/c space group,with the following unit cell parameters:a=19:6830(15)Å,b=18:1870(15)Å,c=6:8567(6)Å,β=93:224ð3Þ○and Z=4.On the other hand,the optical properties of this compound were studied using ultraviolet-visible(UV-Vis)spectroscopy in the range 200-800 nm.Furthermore,the optical absorbances are used to determine the absorption coefficientαand the optical band gap E g,so the Tauc model was used to determine the optical gap energy of the compound(C_(6)H_(10)N_(2))(Hg_(2)Cl_(5))_(2)·3H_(2)O.The analysis of the results revealed the existence of optical allowed indirect transition mechanisms with the band gap energy equal to(2.37 eV)for liquid and(4.33 eV)for solid.Impedance measurements indicate that the electrical and dielectric properties are strongly dependent on both temperature and frequency.Nyquist plots(Z'' versus Z ')show that the conductivity behavior is accurately represented by an equivalent circuit model which consists of a series combination of bulk and grain boundary.Furthermore,the angular frequency dependence plots of the real and imaginary parts,ε' andε'',of complex dielectric permittivityε*and tanδlosses at several temperatures between 303 and 453 K were studied for the title compound.Finally,the modulus plots can be characterized by the presence of two relaxation peaks.