This paper presents an overview of dielectric patch(DP)antennas developed in recent years.The employed DP resonator composed of a DP and a bottom substrate is analyzed comprehensively here,enabling the easy realizatio...This paper presents an overview of dielectric patch(DP)antennas developed in recent years.The employed DP resonator composed of a DP and a bottom substrate is analyzed comprehensively here,enabling the easy realization of a quasi-planar DP antenna.It combines the dual advantages of the conventional microstrip patch(MP)antenna and dielectric resonator(DR)antenna in terms of profile,gain,bandwidth,radiation efficiency,and design freedom.Furthermore,the DP antenna inherits the multi-mode characteristic of the DR antenna,thus it has a large number of high-order modes,including TMmn mode and TEmn mode.The high-order modes are widely applied,for example,by combining with the dominant TM10 mode to expand the bandwidth,or selecting multiple higher-order modes to implement a high-gain antenna.Additionally,the non-radiation high-order modes are also utilized to produce natural radiation null in filtering antenna design.In this paper,the design theories and techniques of DP antenna are introduced and investigated,including calculation and control methods of the resonant mode frequencies,analysis of the radiation mechanism,and applications of the multi-mode characteristic.This overview could provide guidance for the subsequent antenna design,thus effectively avoid time-consuming optimization.展开更多
Dual-material gate MOSFET with dielectric pockets (DMGDP MOSFET) is proposed to eliminate the potential weakness of the DP MOSFET for CMOS scaling toward the 32 nm gate length and beyond. The short-channel effects (SC...Dual-material gate MOSFET with dielectric pockets (DMGDP MOSFET) is proposed to eliminate the potential weakness of the DP MOSFET for CMOS scaling toward the 32 nm gate length and beyond. The short-channel effects (SCE) can be effectively suppressed by the insulator near the source/drain regions. And the suppression capability can be even better than the DP MOSFET due to the drain bias absorbed by the screen gate. The speed performance and electronic characteristics of the DMGDP MOSFET are comprehensively studied. Compared to the experimental data from Jurczak et al., the DMGDP PMOSFET exhibits good subthreshold characteristics and the on-state current is almost the twice that of the DP PMOSFET. The intrinsic delay of the NMOS reaches 21% greater than the DP MOSFET for 32 nm node. The higher fT of 390 GHz is achieved, which is a 32% enhancement in comparison with the DP MOSFET when the gate length is 50 nm. Finally, the design guideline and the optimal regions of the DMGDP MOSFET are discussed.展开更多
基金supported by the Natural Science Foundation of Jiangsu Province under Grant BK20201438by the Natural Science Research Project of Jiangsu Provincial Institutions of Higher Education under Grant 20KJA510002by the Postgraduate Research and Practice Innovation Program of Jiangsu Province under Grant KYCX202825.
文摘This paper presents an overview of dielectric patch(DP)antennas developed in recent years.The employed DP resonator composed of a DP and a bottom substrate is analyzed comprehensively here,enabling the easy realization of a quasi-planar DP antenna.It combines the dual advantages of the conventional microstrip patch(MP)antenna and dielectric resonator(DR)antenna in terms of profile,gain,bandwidth,radiation efficiency,and design freedom.Furthermore,the DP antenna inherits the multi-mode characteristic of the DR antenna,thus it has a large number of high-order modes,including TMmn mode and TEmn mode.The high-order modes are widely applied,for example,by combining with the dominant TM10 mode to expand the bandwidth,or selecting multiple higher-order modes to implement a high-gain antenna.Additionally,the non-radiation high-order modes are also utilized to produce natural radiation null in filtering antenna design.In this paper,the design theories and techniques of DP antenna are introduced and investigated,including calculation and control methods of the resonant mode frequencies,analysis of the radiation mechanism,and applications of the multi-mode characteristic.This overview could provide guidance for the subsequent antenna design,thus effectively avoid time-consuming optimization.
基金Supported by the National Natural Science Foundation of China (Grant No. 60206006)Program for the New Century Excellent Talents of Ministry of Education of China (Grant No. 681231366)the National Defense Pre-Research Foundation of China (Grant No. 51308040103)
文摘Dual-material gate MOSFET with dielectric pockets (DMGDP MOSFET) is proposed to eliminate the potential weakness of the DP MOSFET for CMOS scaling toward the 32 nm gate length and beyond. The short-channel effects (SCE) can be effectively suppressed by the insulator near the source/drain regions. And the suppression capability can be even better than the DP MOSFET due to the drain bias absorbed by the screen gate. The speed performance and electronic characteristics of the DMGDP MOSFET are comprehensively studied. Compared to the experimental data from Jurczak et al., the DMGDP PMOSFET exhibits good subthreshold characteristics and the on-state current is almost the twice that of the DP PMOSFET. The intrinsic delay of the NMOS reaches 21% greater than the DP MOSFET for 32 nm node. The higher fT of 390 GHz is achieved, which is a 32% enhancement in comparison with the DP MOSFET when the gate length is 50 nm. Finally, the design guideline and the optimal regions of the DMGDP MOSFET are discussed.
