Exact Distribution of Difference of Two Sample Proportions and Its Inferences

Comparing two population proportions using confidence interval could be misleading in many cases, such as the sample size being small and the test being based on normal approximation. In this case, the only one option that we have is to collect a large sample. Unfortunately, the large sample might not be possible. One example is a person suffering from a rare disease. The main purpose of this journal is to derive a closed formula for the exact distribution of the difference between two independent sample proportions, and use it to perform related inferences such as a confidence interval, regardless of the sample sizes and compare with the existing Wald, Agresti-Caffo and Score. In this journal, we have derived a closed formula for the exact distribution of the difference between two independent sample proportions. This distribution doesn’t need any requirements, and can be used to perform inferences such as: a hypothesis test for two population proportions, regardless of the nature of the distribution and the sample sizes. We claim that exact distribution has the least confidence width among Wald, Agresti-Caffo and Score, so it is suitable for inferences of the difference between the population proportion regardless of sample size.

Investigation of Gate Defects in Ultrathin MOS Structures Using DTRS Technique

s:A detailed description of relaxation spectroscopy technique under direct tunneling stress is given.A double peak phenomena by applied relaxation spectroscopy on ultra thin (<3nm) gate oxide is found.It suggests that two kinds of traps exist in the degradation of gate oxide.It is also observed that both the trap density and the generation/capture cross section of oxide trap and interface trap are smaller in ultra thin gate oxide (<3nm) under DT stress than those in the thicker oxide (>4nm) under FN stress,and the centroid of oxide trap is closer to anode interface than in the center of oxide.

Determination of Threshold Voltage and Mobility ofMOSFET by Proportional Difference Operator

Proportional Difference Operator (PDO) method is proposed for the first time to determine the key parameters of a MOSFET, including the threshold voltage and ca rrier mobility.This method is applied to the transfer characteristic of a MOSFET first, and then the effect of gate voltage on carrier mobility is considered. The dependence of carrier mobility on the gate voltage is obtained.