Influence of different substrates on the formation and characteristics of aerobic granules in sequencing batch reactors

The effects of different substrates on the aerobic granulation process were studied using laboratory-scale sequencing batch reactors （SBRs）. Four parallel granules sequencing batch reactors （GSBR）： R1, R2, R3, and R4 were fed with acetate, glucose, peptone and fecula, respectively. Stable aerobic granules were successfully cultivated in R1, R2, R4, and smaller granules less than 500 μm were formed in R3. Morphology and the physic-chemical characteristics of aerobic granules fed with different carbon substrates were investigated by the four reactors operated under the same pressure. The aerobic granules in the four reactors were observed and found that peptone was the most stable one due to its good settleability even after a sludge age as short as 10 d. A strong correlation was testified between the characteristics of aerobic granules and the properties of carbon substrates. The stability of aerobic granules was affected by extracellular polymer substances （EPS） derived from microorganism growth during feast time fed with different carbon substrates, and the influence of the property of storage substance was greater than that of its quantity. Optimal carbon substrates, which are helpful in the cultivation and retention of well-settling granules and in the enhancement of the overall ability of the aerobic granules reactors, were found.

Growth and Characterization of InAs1-xSbx with Different Sb Compositions on GaAs Substrates

InAs1-xSbx with different compositions is grown by molecular beam epitaxy on （100）-oriented semi-insulating GaAs substrates. The increase of Sb content in the epilayer results in the deterioration of crystal quality and surface morphology. Hall measurements show that the carrier concentration increases with the composition of Sb. The electron mobility decreases initially, when Sb composition exceeds a certain value, and the mobility increases slightly. In this work, we emphasize the comparison of crystal quality, surface morphology and electrical properties of epilayers with different Sb compositions.

The Efficiency Droop of InGaN-Based Green LEDs with Different Superlattice Growth Temperatures on Si Substrates via Temperature-Dependent Electroluminescence

InGaN-based green light-emitting diodes （LEDs） with different growth temperatures of superlattice grown on Si （111） substrates are investigated by temperature-dependent electroluminescence between 100 K and 350K. It is observed that with the decrease of the growth temperature of the superlattice from 895℃ to 855℃, the forward voltage decreases, especially at low temperature. We presume that this is due to the existence of the larger average size of V-shaped pits, which is determined by secondary ion mass spectrometer measurements. Meanwhile, the sample with higher growth temperature of superlattice shows a severer efficiency droop at cryogenic temperatures （about 100 K-150 K）. Electron overflow into p-GaN is considered to be the cause of such phenomena, which is relevant to the poorer hole injection into multiple quantum wells and the more reduced effective active volume in the active region.