Interpenetrated Structures for Enhancing Ion Diffusion Kinetics in Electrochemical Energy Storage Devices

The architectural design of electrodes offers new opportunities for next-generation electrochemical energy storage devices(EESDs)by increasing surface area,thickness,and active materials mass loading while maintaining good ion diffusion through optimized electrode tortuosity.However,conventional thick electrodes increase ion diffusion length and cause larger ion concentration gradients,limiting reaction kinetics.We demonstrate a strategy for building interpenetrated structures that shortens ion diffusion length and reduces ion concentration inhomogeneity.This free-standing device structure also avoids short-circuiting without needing a separator.The feature size and number of interpenetrated units can be adjusted during printing to balance surface area and ion diffusion.Starting with a 3D-printed interpenetrated polymer substrate,we metallize it to make it conductive.This substrate has two individually addressable electrodes,allowing selective electrodeposition of energy storage materials.Using a Zn//MnO_(2) battery as a model system,the interpenetrated device outperforms conventional separate electrode configurations,improving volumetric energy density by 221%and exhibiting a higher capacity retention rate of 49%compared to 35%at temperatures from 20 to 0℃.Our study introduces a new EESD architecture applicable to Li-ion,Na-ion batteries,supercapacitors,etc.

A study on the minority carrier diffusion length in n-type GaN films

The minority carrier diffusion length of n-type GaN fdms grown by metalorganic chemical vapor deposition （MOCVD） has been studied by measuring the surface photovoltaic （PV） spectra. It was found that the minority carrier diffusion length of undoped n-type GaN is considerably larger than that in lightly Si-doped GaN. However, the data suggested that the dislocation and electron concentration appear not to be responsible for the minority cartier diffusion length. It is suggested that Si doping plays an important role in decreasing the minority carrier diffusion length.

Photoluminescence Analysis of Electron Damage for Minority Carrier Diffusion Length in GaInP/GaAs/Ge Triple-Junction Solar Cells

Photoluminescence（PL） measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0, 1.8 and 11.5 MeV electrons with fluences ranging up to 3 × 10^15, 1 × 10^15 and 3 × 10^14 cm^-2, respectively. The degradation rates of PL intensity increase with the electron fluence and energy. Furthermore, the damage coefficient of minority carrier diffusion length is estimated by the PL radiative efficiency. The damage coefficient increases with the electron energy. The relation of damage coefficient to electron energy is discussed with the non-ionizing energy loss（NIEL）, which shows a quadratic dependence between damage coefficient and NIEL.

Simultaneously optimizing exciton diffusion length and nonradiative energy loss in organic solar cells via ternary strategy

Significant nonradiative energy loss and short exciton diffusion length in organic solar cells(OSCs)are two major obstacles to achieving state-of-the-art efficiencies.It is crucial to conduct a study on the intensive mechanism and improvement strategies for future breakthroughs in the efficiency of OSCs.In this work,nonradiative energy loss and exciton diffusion length are optimized simultaneously by incorporating a guest acceptor(LA15)to construct ternary OSC(D18:L8-BO:LA15).Firstly,LA15 exhibits excellent compatibility with the host acceptor L8-BO,and effectively improves the fluorescence quantum efficiency(FLQY),resulting in suppressed non-radiative energy loss.Moreover,LA15 effectively prolongs the fluorescent lifetime of the acceptor phase from 0.85 to 1.12 ns,leading to larger exciton diffusion length,which is beneficial for reducing geminate recombination.Besides,the addition of LA15 optimizes the crystallinity of the active layer with amplified charge transport capacity.As a result,the optimized D18:L8-BO:LA15 device achieves ultralow nonradiative energy loss of 0.18 e V and improved fill factor(FF)with high efficiency up to 19.13%.These results highlight the crucial roles of regulating FLQYand exciton lifetime in achieving highefficiency OSCs.

High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures

The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and the muhilayer structure are grown by molecular beam epitaxy. The former has a constant Be concentration of 1 × 10^19 cm^-3, while the latter includes four layers with Be doping concentrations of 1 × 10^19, 7 × 10^18, 4 × 10^18, and 1 × 10^18 cm^-3 from the bottom to the surface. Negative-electron-affinity GaAs photocathodes are fabricated by exciting the sample surfaces with alternating input of Cs and O in the high vacuum system. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the muhilayer structure enhanced by at least 50% as compared to that of the monolayer structure. This attributes to the improvement in the crystal quality and the increase in the surface escape probability. Different stress situations are observed on GaAs samples with monolayer structure and muhilayer structure, respectively.

A Systematic Study of the Forbidden Pitch in the CD Through-Pitch Curve for Beyond 130nm

The forbidden pitch ＂dip＂ in the critical dimension （CD） through the pitch curve is a well-known optical proximity effect. The CD and CD process window near the ＂dip＂,usually found near a pitch range of 1.1 to 1.4 wavelength/ NA （numerical aperture）,is smaller when compared with other pitches. This is caused by inadequate imaging contrast for an unequal line and space grating. Although this effect is relatively well-known, its relationship with typical process condition parameters,such as the effective image blur caused by the photo-acid diffusion during the post exposure bake or the aberration in the imaging lens, has not been systematically studied. In this paper, we will examine the correlation between the image blur and the effect on the CD, including the decrease in the CD value （the depth of the ＂dip＂） and the CD process window. We find that both the decrease in the CD value and the focus latitude near the forbidden pitch correlate very well with the effective Gaussian image blur. Longer effective diffusion length correlates well with a smaller process window and a deeper CD ＂dip＂. We conclude that the dip depth is very sensitive to the change in image contrast.

Over 12%efficient kesterite solar cell via back interface engineering

Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)has attracted considerable attention as a non-toxic and earthabundant solar cell material.During selenization of CZTSSe film at high temperature,the reaction between CZTSSe and Mo is one of the main reasons that result in unfavorable absorber and interface quality,which leads to large open circuit voltage deficit(VOC-def)and low fill factor(FF).Herein,a WO_(3)intermediate layer introduced at the back interface can effectually inhibit the unfavorable interface reaction between absorber and back electrode in the preliminary selenization progress;thus high-quality crystals are obtained.Through this back interface engineering,the traditional problems of phase segregation,voids in the absorber and over thick Mo(S,Se)_(2)at the back interface can be well solved,which greatly lessens the recombination in the bulk and at the interface.The increased minority carrier diffusion length,decreased barrier height at back interface contact and reduced deep acceptor defects give rise to systematic improvement in VOCand FF,finally a 12.66%conversion efficiency for CZTSSe solar cell has been achieved.This work provides a simple way to fabricate highly efficient solar cells and promotes a deeper understanding of the function of intermediate layer at back interface in kesterite-based solar cells.

Photoelectrochemical evaluation of SILAR-deposited nanoporous BiVO4 photoanodes for solar-driven water splitting

We report a photoelectrochemical investigation of BiVO4 photoanodes prepared by successive ionic layer adsorption and reaction(SILAR),a facile method that yields uniform nanoporous films.After characterization of the phase,morphology,composition,and optical properties of the prepared films,the efficiencies of charge separation(ηsep)and water oxidation(ηox)in solar water splitting cells employing these photoanodes were estimated following a previously reported procedure.Unexpected wavelength and illumination direction dependencies were discovered in the derived efficiencies,casting doubt on the validity of the analysis.An alternative approach using a diffusion–reaction model that explicitly considers the efficiency of electron collection resolved the discrepancies and explained the illumination direction dependence of the photocurrent.Electron diffusion lengths(Ln)of 0.45μm and 0.55μm were derived for pristine and cobalt phosphate(Co-Pi)modified BiVO4,respectively,which are much shorter than the film thickness of^2.1μm.The Co-Pi treatment also increasedηoxfrom 0.86 to^1,which is the main reason for the overall performance enhancement caused by adding Co-Pi.These findings suggest that there is little scope for improving the performance of SILAR-deposited BiVO4 photoanodes by further catalyzing water oxidation,but enhanced performance is achievable if electron transport can be improved.

Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures. On the basis of our early research on the surface photovoltage of GaAs photocathodes, and comparative research before and after activation of reflection-mode GaAs photocathodes, we further the comparative research on transmission-mode GaAs photocathodes. An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer. By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure, we can obtain the equations for the surface photovoltage （SPV） curve before activation and the spectral response curve （SRC） after activation. Through experiments and fitting calculations for the designed material, the body-material parameters can be well fitted by the SPV before activation, and proven by the fitting calculation for SRC after activation. Through the comparative research before and after activation, the average surface escape probability （SEP） can also be well fitted. This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method, which only measures the body parameters by SRC after activation. It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes, and optimize the Cs-O activation technique in the future.

Carrier diffusion coefficient is independent of defects in CH_(3)NH_(3)PbBr_(3) single crystals:Direct evidence

Organolead halide perovskite solar cells have attracted extensive interests in recent years. Thanks to innovations in materials process and technology, the power conversion efficiency (PCE) of perovskites-based solar cells increases from 3.8% to 25.2%[1–4].In evaluating the quality of perovskite materials, a few key photophysical properties such as the lifetime, mobility and diffusion length of photogenerated carriers are usually measured.

Thermal stability of the spin injection in Co/Ag/Co lateral spin valves

Spin injection, spin diffusion, and spin detection are investigated in Co/Ag/Co lateral spin valves at room temperature.Clear spin accumulation signals are detected by the non-local measurement. By fitting the results to the one-dimensional diffusion equation,8.6% spin polarization of the Co/Ag interface and -180 nm spin diffusion length in Ag are obtained.Thermal treatment results show that the spin accumulation signal drastically decreases after 100℃ annealing, and disappears under 200℃ annealing. Our results demonstrate that, compared to the spin diffusion length, the decrease and the disappearance of the spin accumulation signal are mainly dominated by the variation of the interfacial spin polarization of the Co/Ag interface.

Carrier Recombination of Organic-Inorganic 3D Halide Perovskite Single Crystals

Organic-inorganic 3D halide perovskite materials recently have become one of the major players of hybrid semiconductors for photovoltaic and optoelectronic applications.The diffusion length of charge carriers is one of the critical parameters for justifying photovoltaic applications of materials.In this work,we propose a realistic kinetic model in order to fully understand carrier relaxation rate of photoexcited organic perovskites with a negligible exciton formation in photoluminescence lifetime measurements.We find that the extraction of carrier relaxation rate has to be made from multiple fluence-dependent photoluminescence lifetime measurements with global fittings,instead of a traditional single fluence lifetime measurement.To demonstrate the validity of the model,two kinds of p-doped CH3NH3PbI3 single crystals were grown up by intentionally increasing defects.Global fittings of the kinetic model to the two kinds of single crystals yield doping density,trap density,and recombination constants.Our methodology provides a self-contained approach to determine diffusion lengths of organic 3D halide perovskite materials.

Highly Fluorescent Semiconducting Two-Dimensional Conjugated Polymer Films Achieved by Side-Chain Engineering Showing Large Exciton Diffusion Length

Semiconducting two-dimensional conjugated polymers(2DCPs)with strong fluorescence emission have great potential for various optoelectronic applications.However,it is enormously challenging to achieve this goal due to the significant compact interlayerπ-πstacking-induced quenching effect in these systems.In this work,we found that highly fluorescent semiconducting 2DCPs can be prepared through an effective side-chain engineering approach in which interlayer spacers are introduced to reduce the fluorescence quenching effect.The obtained two truxene-based 2DCP films that,along with-C6H13 and-C_(12)H_(25)alkyl side chains as interlayer spacers both demonstrate superior fluorescence properties with a high photoluminescence quantum yield of 5.6%and 14.6%,respectively.These are among the highest values currently reported for 2DCP films.Moreover,an ultralong isotropic quasi-twodimensional exciton diffusion length constrained in the plane with its highest value approaching 110 nm was revealed by the transient photoluminescence microscopy technique,suggesting that theπ-conjugated structure in these truxene-based 2DCP films has effectively been extended.This work can enable a broad exploration of highly fluorescent semiconducting 2DCP films for more deeply fundamental properties and optoelectronic device applications.

High-performance planar heterojunction perovskite solar cells： Preserving long charge carrier diffusion lengths and interracial engineering

We demonstrate that charge carrier diffusion lengths of two classes of perovskites, CH3NH3PbI3-xClx and CH3NH3PbI3, are both highly sensitive to film processing conditions and optimal processing procedures are critical to preserving the long carrier diffusion lengths of the perovskite films. This understanding, together with the improved cathode interface using bilayer-structured electron transporting interlayers of [6,6]-phenyl-C61-butyric acid methyl ester （PCBM）/ZnO, leads to the successful fabrication of highly efficient, stable and reproducible planar heterojunction CH3NH3PbI3-xCl2 solar cells with impressive power-conversion efficiencies （PCEs） up to 15.9%. A 1-square-centimeter device yielding a PCE of 12.3% has been realized, demonstrating that this simple planar structure is promising for large-area devices.

Prediction model for the diffusion length in silicon-based solar cells

A novel approach to compute diffusion lengths in solar cells is presented. Thus, a simulation is done; it aims to give computational support to the general development of a neural networks （NNs）, which is a very powerful predictive modelling technique used to predict the diffusion length in mono-crystalline silicon solar cells. Furthermore, the computation of the diffusion length and the comparison with measurement data, using the infrared injection method, are presented and discussed.

Enhanced spin diffusion length by suppressing spin-flip scattering in lateral spin valves

The spin transport was investigated in permally （Py）/MgO/Ag junction with lateral spin valve structure. Non-local lateral spin valves measurement was carried out to determin, the apin accumulignal in Ag strip, and the spin dif u^sion - length in Ag of the lateral spin valves was extracted from devices with the different distances between injector and detector. The experimental results are found that spin accumulation and spin diffusion length （2s） could be significantly enhanced in Ag strip with MgO capping layer, and those effects may be attributed to the low-surface spin scattering rate in Ag with an MgO cap- ping layer.

Design and fabrication of 1-D semiconductor nanomaterials for high-performance photovoltaics

To date, the cost-effective utilization of solar energy by photovoltaics for large-scale deployment remains challenging. Further cost minimization and efficiency maximization, through reduction of material consumption, simplification of device fabrication as well as optimization of device structure and geometry, are required. The usage of 1D nanomaterials is attractive due to the outstanding light coupling effect, the ease of fabrication, and integration with one-dimensional(1-D) semiconductor materials. The light absorption efficiency can be enhanced significantly, and the corresponding light-toelectricity conversion efficiency can be as high as their bulk counterparts. Also, the amount of active materials used can be reduced. This review summarizes the recent development of 1-D nanomaterials for photovoltaic applications, including the anti-reflection, the light absorption,the minority diffusion, and the semiconductor junction properties. With solid progress and prospect shown in the past 10 years, 1-D semiconductor nanomaterials are attractive and promising for the realization of high-efficiency and low-cost solar cells.