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Ultra wideband CMOS digital T-type attenuator with low phase errors 被引量:1
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作者 Chao Fan Yahua Ran Liqun Ye 《Journal of Semiconductors》 EI CAS CSCD 2022年第3期57-59,共3页
A proposed inductive-phase-compensation ultra wideband CMOS digital T-type attenuator design based on an analysis of minimising phase errors is presented in this letter.In a standard CMOS technology,the proposed atten... A proposed inductive-phase-compensation ultra wideband CMOS digital T-type attenuator design based on an analysis of minimising phase errors is presented in this letter.In a standard CMOS technology,the proposed attenuator is analytically demonstrated to have low phase errors due to the inductive-phase-compensation network.A design equation is inferred and a wide-band 4dB attenuation bit digital attenuator with low phase errors is designed as a test vehicle for the proposed approach. 展开更多
关键词 ULTRA-WIDEBAND digital T-type attenuator low phase error inductive-phase-compensation CMOS
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