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Improved Clamped Diode Based Z-Source Network for Three Phase Induction Motor
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作者 D.Bensiker Raja Singh R.Suja Mani Malar 《Intelligent Automation & Soft Computing》 SCIE 2023年第4期683-702,共20页
The 3Φinduction motor is a broadly used electric machine in industrial applications,which plays a vital role in industries because of having plenty of beneficial impacts like low cost and easiness but the problems lik... The 3Φinduction motor is a broadly used electric machine in industrial applications,which plays a vital role in industries because of having plenty of beneficial impacts like low cost and easiness but the problems like decrease in motor speed due to load,high consumption of current and high ripple occurrence of ripples have reduced its preferences.The ultimate objective of this study is to control change in motor speed due to load variations.An improved Trans Z Source Inverter(ΓZSI)with a clamping diode is employed to maintain constant input voltage,reduce ripples and voltage overshoot.To operate induction motor at rated speed,different controllers are used.The conventional Proportional-Inte-gral(PI)controller suffers from high settling time and maximum peak overshoot.To overcome these limitations,Fractional Order Proportional Integral Derivative(FOPID)controller optimized by Gray Wolf Optimization(GWO)technique is employed to provide better performance by eliminating maximum peak overshoot pro-blems.The proposed speed controller provides good dynamic response and controls the induction motor more effectively.The complete setup is implemented in MATLAB Simulation to verify the simulation results.The proposed approach provides optimal performance with high torque and speed along with less steady state error. 展开更多
关键词 Three phase induction motor voltage source inverter improvedΓZSI with clamping diode PI controller fractional order PID controller gray wolf optimizer
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Design of a novel high holding voltage LVTSCR with embedded clamping diode 被引量:1
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作者 朱玲 梁海莲 +1 位作者 顾晓峰 许杰 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第6期559-563,共5页
In order to reduce the latch-up risk of the traditional low-voltage-triggered silicon controlled rectifier(LVTSCR), a novel LVTSCR with embedded clamping diode(DC-LVTSCR) is proposed and verified in a 0.18-μm CMOS pr... In order to reduce the latch-up risk of the traditional low-voltage-triggered silicon controlled rectifier(LVTSCR), a novel LVTSCR with embedded clamping diode(DC-LVTSCR) is proposed and verified in a 0.18-μm CMOS process. By embedding a p+implant region into the drain of NMOS in the traditional LVTSCR, a reversed Zener diode is formed by the p+implant region and the n+bridge, which helps to improve the holding voltage and decrease the snapback region.The physical mechanisms of the LVTSCR and DC-LVTSCR are investigated in detail by transmission line pulse(TLP)tests and TCAD simulations. The TLP test results show that, compared with the traditional LVTSCR, the DC-LVTSCR exhibits a higher holding voltage of 6.2 V due to the embedded clamping diode. By further optimizing a key parameter of the DC-LVTSCR, the holding voltage can be effectively increased to 8.7 V. Therefore, the DC-LVTSCR is a promising ESD protection device for circuits with the operation voltage of 5.5–7 V. 展开更多
关键词 electrostatic discharge silicon controlled rectifier clamping diode holding voltage
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Superjunction 4H-SiC trench-gate IGBT with an integrated clamping PN diode
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作者 Huang Yi Wang Xuecheng +3 位作者 Gao Sheng Liu Bin Zhang Hongsheng Han Genquan 《The Journal of China Universities of Posts and Telecommunications》 EI CSCD 2024年第2期3-9,27,共8页
In this paper,a novel superjunction 4H-silicon carbide(4H-SiC)trench-gate insulated-gate bipolar transistor(IGBT)featuring an integrated clamping PN diode between the P-shield and emitter(TSD-IGBT)is designed and theo... In this paper,a novel superjunction 4H-silicon carbide(4H-SiC)trench-gate insulated-gate bipolar transistor(IGBT)featuring an integrated clamping PN diode between the P-shield and emitter(TSD-IGBT)is designed and theoretically studied.The heavily doping superjunction layer contributes to a low specific on-resistance,excellent electric field distribution,and quasi-unipolar drift current.The anode of the clamping diode is in floating contact with the P-shield.In the on-state,the potential of the P-shield is raised to the turn-on voltage of the clamping diode,which prevents the hole extraction below the N-type carrier storage layer(NCSL).Additionally,during the turn-off transient,once the clamping diode is turned on,it also promotes an additional hole extraction path.Furthermore,the potential dropped at the semiconductor near the trench-gate oxide is effectively reduced in the off-state. 展开更多
关键词 4H-silicon carbide(4H-SiC) trench-gate SUPERJUNCTION clamping diode
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A Novel Multilevel Inverter Circuit for the Performance Enhancement of Direct Torque Controlled Induction Motor
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作者 Manoj Kumar Nadesan Geetha Ramadas Chellamuthu Chinnagounder 《Circuits and Systems》 2016年第9期2771-2794,共24页
Induction motor is the most sought after motor in the industry for excellent performance characteristics and robustness. Developments in the Power Electronic circuitry have revolutionised the induction motor industry ... Induction motor is the most sought after motor in the industry for excellent performance characteristics and robustness. Developments in the Power Electronic circuitry have revolutionised the induction motor industry leading to the developments in various control strategies and circuits for motor control. Direct Torque Control (DTC) is one of the excellent control strategies preferred by industries for controlling the torque and flux in an induction machine. The main drawback of DTC is the presence of torque ripple which is slightly more than the acceptable limit. There are various parameters that introduce ripples in the electromagnetic torque, one of them being the type of inverter circuit. There are various types of inverter circuits available and the effect of each of them in the production of torque ripple is different. This work is an attempt to identify the influence of various multilevel inverter circuits on the torque ripple level and to propose the best inverter circuit. The influence of multilevel diode clamped inverter and cascaded H bridge inverter circuits on torque ripple minimization, is analysed using simulation studies for identifying the most suitable multilevel inverter circuit which gives minimum torque ripple. The results obtained from the simulation studies are validated by hardware implementation on 0.75 kW induction motor. 展开更多
关键词 diode clamped Inverter Circuit Cascaded H Bridge Inverter Direct Torque Control Proportional Integral Controller Space Vector Modulation Induction Motor
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