Comparative Analysis between Single Diode and Double Diode Model of PV Cell: Concentrate Different Parameters Effect on Its Efficiency

This research appraises comparative analysis between single diode and double diode model of photovoltaic (PV) solar cells to enhance the conversion efficiency of power engendering PV solar systems. Single diode model is simple and easy to implement, whereas double diode model has better accuracy which acquiesces for more precise forecast of PV systems performance. Exploration is done on the basis of simulation results and MATLAB tool is used to serve this purpose. Simulations are performed by varying distinct model parameters such as solar irradiance, temperature, value of parasitic resistances, ideality factor of diode and number of series and parallel connected solar cells used to assemble PV array. Conspicuous demonstration is executed to analyze effects of these specifications on the efficiency curve and power vs. voltage output characteristics of PV cell for specified models.

Theoretical Modeling of Luminous Efficacy for High-Power White Light-Emitting Diodes

The photometric characteristics of high-power white light-emitting diode （LED） devices are investigated. A theoretical model for the luminous efficacy o[ high-power white LED devices and LED systems is proposed. With the proposed theoretical model, the mechanism of the luminous efficacy decrease is explained. Meanwhile, the model can be used to estimate the luminous efficacy oF LEDs under general operation conditions, such as different operation temperatures and injection currents. The wide validity of the luminous efficacy model is experimentally verified through the measurements of different types of LEDs. The experimental results demonstrate a high estimation accuracy. The proposed models not only can be applied to estimate the LED photometric performance, but also is helpful for reliability research of LEDs.

High-Efficiency Rectifier for Wireless Energy Harvesting Based on Double Branch Structure

A rectifier circuit for wireless energy harvesting(WEH) with a wide input power range is proposed in this paper. We build up accurate models of the diodes to improve the accuracy of the design of the rectifier. Due to the nonlinear characteristics of the diodes, a new band-stop structure is introduced to reduce the imaginary part impedance and suppress harmonics. A novel structure with double branches and an optimized λ/4 microstrip line is proposed to realize the power division ratio adjustment by the input power automatically. The proposed two branches can satisfy the two cases with input power of-20 dBm to 0 dBm and 0 dBm to 15 dBm, respectively. Here, dBm = 10 log(P mW), and P represents power. An impedance compression network(ICN) is correspondingly designed to maintain the input impedance stability over the wide input power range. A rectifier that works at 2.45 GHz is implemented. The measured results show that the highest efficiency can reach 51.5% at the output power of 0 dBm and higher than 40% at the input power of-5 dBm to 12 dBm.

Improved artificial neural network method for predicting photovoltaic output performance

To ensure the safety and stability of power grids with photovoltaic(PV)gen eration integrati on,it is necessary to predict the output perform a nee of PV modules un der varyi ng operating con ditions.In this paper,an improved artificial neural network(ANN)method is proposed to predict the electrical characteristics of a PV module by combining several neural networks under different environmental conditions.To study the dependenee of the output performance on the solar irradianee and temperature,the proposed neural network model is composed of four neural networks,it called multineural network(MANN).Each neural network consists of three layers,in which the input is solar radiation,and the module temperature and output are five physical parameters of the single diode model.The experimental data were divided into four groups and used for training the neural networks.The electrical properties of PV modules,including l-V curves,PV curves,and normalized root mean square error,were obtained and discussed.The effectiveness and accuracy of this method is verified by the experimental data for d iff ere nt types of PV modules.Compared with the traditional single-ANN(SANN)method,the proposed method shows be社er accuracy under different operating conditions.

A Finite Difference Method Modeling for IGBT and Diode in PSPICE

In this paper,a novel modeling approach for both PiN diode and IGBT is presented.In this model,the carrier diffusion equation,which retains the distributed nature of charge dynamics in bipolar power devices,is solved directly by finite difference method in PSPICE.The physical basis of this model and some practical considerations are introduced.Compared with conventional Fourier based IGBT model,the presented model keeps higher simulation speed and comparable high accuracy.These features were also verified by simulations and experiments.

Valuation and Determination of Seven and Five Parameters of Photovoltaic Generator by Iterative Method

The mathematical modeling of solar cells is essential for any optimization operation of the efficiency or the diagnosis of photovoltaic generator. The photovoltaic module is generally represented by an equivalent circuit whose parameters are experimentally calculated by using the characteristic current-tension, I-V. The precise determination of these parameters stays a challenge for the researchers, making to a big difference in the models and the digital methods dedicated to their characterizations. In the present paper, We are interested to characterize the parameters of single diode and two diodes models, in order to plan the behavior of the photovoltaic generator under real functioning conditions. We developed an identification method of the parameters using Newton Raphson method by using the software Matlab/Simulink. This method is the faster technique which allows the identification of several parameters and can be used in real time applications. The results of the proposed method show an accordance with the experimental and simulated characteristics of photovoltaic generator.

Temperature-variable high-frequency dynamic modeling of PIN diode

The PIN diode model for high frequency dynamic transient characteristic simulation is important in conducted EMI analysis. The model should take junction temperature into consideration since equipment usually works at a wide range of temperature. In this paper, a temperature-variable high frequency dynamic model for the PIN diode is built, which is based on the Laplace-transform analytical model at constant temperature. The relationship between model parameters and temperature is expressed as temperature functions by analyzing the physical principle of these parameters. A fast recovery power diode MUR1560 is chosen as the test sample and its dynamic performance is tested under inductive load by a temperature chamber experiment, which is used for model parameter extraction and model verification. Results show that the model proposed in this paper is accurate for reverse recovery simulation with relatively small errors at the temperature range from 25 to 120 ℃.

Crucial problems in the design of a terahertz tripler

A frequency-multiplied source at the terahertz band using discrete planar Schottky diodes, which is a critical element in heterodyne instruments, has been studied by some domestic research institutions in recent years. Besides the design method, there are still many crucial problems that must be taken into consideration in the design. This article mainly discuss three aspects based on the measured data of a 225 GHz tripler that we designed. Firstly, the accuracy of the diode model concerns the reliability of the simulation results. According to the Spice parameters and the measured results, the physical size and the DC parameter of the Schottky diode can be corrected until there is a good consistency between the simulated and measured results. Secondly, the heat accumulation happens to the Schottky junction when the high input power is added. A steady-state thermal simulation is done and the results show that the hottest temperature is about 140℃ with 250 mW input power, which is safe to the diode. Lastly, some non-ideal factors are brought during the assembly process such as the uncertainty in the conductive adhesive shape and location deviation of the circuit. Furthermore, the effect on the performance of the frequency multiplier is calculated in this work.