Sn thin film on Cu foil substrate as the anode of lithium ion battery was prepared by direct current magnetron sputtering(DCMS). The surface morphology,composition and thickness and the electrochemical behaviors of th...Sn thin film on Cu foil substrate as the anode of lithium ion battery was prepared by direct current magnetron sputtering(DCMS). The surface morphology,composition and thickness and the electrochemical behaviors of the prepared Sn thin film were characterized by scanning electron microscopy(SEM),X-ray diffraction(XRD),inductively coupled plasma atomic emission spectrometry(ICP),cyclic voltammetry(CV) and galvanostatic charge/ discharge(GC) measurements. It is found that the Sn film is consists of pure Sn with an average particle diameter of 100 nm. The thickness of the film is about 320 nm. The initial lithium insertion capacity of the Sn film is 771 mA·h/g. The reversible capacity of the film is 570 mA·h/g and kept at 270 mA·h/g after 20 cycles.展开更多
Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing...Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction tech- nique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320 ℃ for 3 h, its phase transition tempera- ture is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.展开更多
This paper reports that a series of silver oxide （AgzO） films are deposited on glass substrates by direct-current reactive magnetron sputtering at a substrate temperature of 250 ℃ and an oxygen flux ratio of 15：18...This paper reports that a series of silver oxide （AgzO） films are deposited on glass substrates by direct-current reactive magnetron sputtering at a substrate temperature of 250 ℃ and an oxygen flux ratio of 15：18 by modifying the sputtering power （SP）. The AgxO films deposited apparently show a structural evolution from cubic biphased （AgO ＋ Ag20） to cubic single-phased （Ag20）, and to biphased （Ag20 ＋ AgO） structure. Notably, the cubic single-phased Ag20 fihn is deposited at the SP = 105 W and an AgO phase with （220） orientation discerned in the Ag^O films deposited using the SP 〉 105 W. The transmissivity and refiectivity of the AgxO films in transparent region decrease with the increase the SP, whereas the absorptivity inversely increases with the increase of the SP. These results may be due to the structural evolution and the increasing film thickness. A redshift of the films＇ absorption edges determined in terms of Tauc formula clearly occurs from 3.1 eV to 2.73 eV with the increase of the SP.展开更多
基金Projects(50771046 20373016) supported by the National Natural Science Foundation of China+2 种基金Project(05200534) supported by the Natural Science Foundation of Guangdong Province, ChinaProject(2006A10704003) supported by the Key Project of Guangdong Province, ChinaProject(2006Z3-D2031) supported by the Key Project of Guangzhou City, China
文摘Sn thin film on Cu foil substrate as the anode of lithium ion battery was prepared by direct current magnetron sputtering(DCMS). The surface morphology,composition and thickness and the electrochemical behaviors of the prepared Sn thin film were characterized by scanning electron microscopy(SEM),X-ray diffraction(XRD),inductively coupled plasma atomic emission spectrometry(ICP),cyclic voltammetry(CV) and galvanostatic charge/ discharge(GC) measurements. It is found that the Sn film is consists of pure Sn with an average particle diameter of 100 nm. The thickness of the film is about 320 nm. The initial lithium insertion capacity of the Sn film is 771 mA·h/g. The reversible capacity of the film is 570 mA·h/g and kept at 270 mA·h/g after 20 cycles.
基金Natural Science Foundation of Tianjin(No.043100811)the Key Program of Natural Science Foundation of Tianjin(No.08JCZDJC17500)
文摘Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction tech- nique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320 ℃ for 3 h, its phase transition tempera- ture is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.
基金supported by the National Natural Science Foundation of China (Grant No. 60807001)the National Basic Research Program of China (Grant No. 2011CB201605)the Foundation of Henan Educational Committee (Grant No. 2010A140017)
文摘This paper reports that a series of silver oxide （AgzO） films are deposited on glass substrates by direct-current reactive magnetron sputtering at a substrate temperature of 250 ℃ and an oxygen flux ratio of 15：18 by modifying the sputtering power （SP）. The AgxO films deposited apparently show a structural evolution from cubic biphased （AgO ＋ Ag20） to cubic single-phased （Ag20）, and to biphased （Ag20 ＋ AgO） structure. Notably, the cubic single-phased Ag20 fihn is deposited at the SP = 105 W and an AgO phase with （220） orientation discerned in the Ag^O films deposited using the SP 〉 105 W. The transmissivity and refiectivity of the AgxO films in transparent region decrease with the increase the SP, whereas the absorptivity inversely increases with the increase of the SP. These results may be due to the structural evolution and the increasing film thickness. A redshift of the films＇ absorption edges determined in terms of Tauc formula clearly occurs from 3.1 eV to 2.73 eV with the increase of the SP.
