Effect of Lattice Mismatch on Luminescence of ZnO/Si Hetero-Structure

The photoluminescence （PL） and Raman spectra of undoped ZnO films deposited directly on Si substrate （sample A）,on Si substrate through a SiC buffer layer （sample B）,and on a ZnO crystal wafer （sample C） are investigated. There are emission peaks centered at 3.18eV （ultraviolet,UV） and 2.38eV （green） in these sampies. Comparing the Raman spectra and the variation of the PL peak intensities with annealing atmosphere, we conclude that the luminescence of the samples is related to the tensile strain in the ZnO film due to the lattice mismatch between the film and the substrate. In particular, the tensile strain reduces the formation energy of OZn antisite oxygen defects,which generate the green emission center. After annealing in oxygen-rich atmosphere, many OZn defects are generated. Thus, the intensity of green emission in ZnO/Si hetero-structure materials increases due to tensile strain in ZnO films.

Near Infrared Photoluminescence from Yb,Al Co-implanted SiO2 Films on Silicon

Intense room-temperature near infrared （NIR） photoluminescence （980 nm and 1032 nm） is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the ^2F5/2 and ^2F7/2 levels of Yb^3＋ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb^3＋ in SiO2. Photoluminescence excitation spectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb^3＋ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminescence of rare-earth ions in SiO2 is very effective.

Effect of sintering temperature on luminescence properties of borosilicate matrix blue–green emitting color conversion glass ceramics

The color conversion glass ceramics which were made of borosilicate matrix co-doped(SrBaSm)Si2O2N2:(Eu^3+Ce^3+) blue-green phosphors were prepared by two-step method in co-sintering. The change in luminescence properties and the drift of chromaticity coordinates(CIE) of the(SrBaSm)Si2O2N2:(Eu^3+Ce^3+) blue-green phosphors and the color conversion glass ceramics were studied in the sintering temperature range from 600℃ to 800℃. The luminous intensity and internal quantum yield(QY) of the blue-green phosphors and glass ceramics decreased with the sintering temperature increasing. When the sintering temperature increased beyond 750℃, the phosphors and the color conversion glass ceramics almost had no peak in photoluminescence(PL) and excitation(PLE) spectra. The results showed that the blue-green phosphors had poor thermal stability at higher temperature. The lattice structure of the phosphors was destroyed by the glass matrix and the Ce^3+ in the phosphors was oxidized to Ce^4+, which further caused a decrease in luminescent properties of the color conversion glass ceramics.

Luminescence of Nanosized Supramolecular Material of Mesoporous Molecular Sieve and Samarium (Ⅲ) Complex

The solutions of rare earth complexes Sm(Phen) 2(TTA)(Bipy)(NO 3) 3 and Sm(L) x (TTA) 4-x (NO 3) 3 [L=Phen (1,10-phenanthroline) or Bipy(2,2′-bipyridine), x =4, 3, 2, 1, 0; TTA is 2-thenoyltrifluoacetone] in EtOH(1×10 -3 mol/L) were prepared. The coefficients of antenna effect are 31 5, 18 2 and 5 6 for Phen, Bipy and TTA, respectively, when the electron configuration of the excited state of the samarium atom in the complexes is 4 D 1/2 . The fluorescent intensity and the lifetime of the supramolecular encapsulation products of (CH 3) 3Si-MCM-41 and Sm 3+ complexes are stronger and longer than those of the encapsulation products of MCM-41 and Sm 3+ complexes respectively. The results show that the host with lipophilic channels is more favourable to the fluorescence of the rare earth complexes than the hydrophilic mesoporous molecular sieve. The fluorescent intensity of (CH 3) 3Si-MCM-41-Sm(Phen) 3(TTA)(NO 3) 3 is the strongest \{among\} the encapsulation series of Sm 3+ complexes, which is assumed to result from the greatly reduction of SiO-H vibration relaxation in host (CH 3) 3Si-MCM-41 and the presence of the discrete strong luminescent centres of the guest molecules associated with the nanosized material′s structure. The luminescent decay halftime of the supramolecular materials is much shorter than that of the powder of the samarium complexes. The result shows that the ligand transferring energy from the triplet state to the singlet state of Sm 3+ ( T 1→S , intersystem crossing) becomes higher. The fluorescent experimental results indicate that the interaction between the host and the guest influences the luminescent properties of the nanostructured supramolecular materials.

Photoluminescence Property of Eu-doped Calcium Aluminium Silicate Glasses

We report on a simple anti novel method to induce Si-related oxygen-deficient defects in CaO-Al2O3-SiO2 glasses by using Al metal nstead of part Al2O3 Blue emission is observed from the glass samples. Moreover, the quantities of the oxygen-deficient defects can be controlled by adjusting AI content. We also prepare glass samples using AI instead of part Al2O3 and doped with Eu^3＋ ions. Addition of Al results in reduction of Eu^3＋ ions to Eu^2＋ ions and change of the luminescence property. The investigation made on to control and characterize the defects could lead to the development of more efficient economical materials with improved properties.

Luminescent properties of β-Lu_2Si_2O_7:RE^(3+)(RE=Ce, Tb) nanoparticles by sol-gel method

Nanoscale RE^3＋ （RE=Ce, Tb） doped and codoped lutetium pyrosilicate Lu2Si2O7（LPS） phosphors were prepared by using the sol-gel method. Heat treatment was performed in the temperature range from 900 to 1100 ℃. The crystal structure was analyzed by X-ray diffraction （XRD）. The results showed that the β-type structure of LPS was obtained at 1100 ℃. The excitation spectra in the UV and VUV ranges and the emission spectra of the samples were measured at room temperature, and their luminescent properties were studied. The energy transfer from Ce^3＋ to Tb^3＋ in the codoped samples were observed and discussed.

Synthesis and Luminescent Properties of Nano-scale Y2Si2O7：Re^3＋ （Re=Eu, Tb） Phosphors via Sol-Gel Method

By using metal nitrates as starting materials and citric acid as a complexing agent, Y2Si207：Re3＋ （Re=Eu, Tb） phosphors were prepared by a sol-gel method. X-ray diffraction was employed to characterize the resulting samples. The results of XRD indicate that the α-Y2Si2O7 nanocrystal with size of 27 nm is obtained at 1000 ℃ and the doping ion content does not influence the structure. The excitation spectra in the UV and VUV ranges and the emission spectra of Re^3＋ doped samples were measured. The excitation spectra in the VUV range is due to absorption of host, that in the UV range is ascribed to absorption transitions from 4f to 5d state of the Tb^3＋ and the charge transfer in the En^3＋-O^2- bond. The spectral energy distribution of the Tb^3＋ emission depends strongly on the Tb3＋ concentration. The dependence of photolumineseenee intensity on Re^3＋ concentration is also discussed in detail. The fluorescent decay curves at room temperature were measured and analyzed.

Si_5P_6O_(25)∶Tb^(3+)的结构与荧光性质

Tb3+ ions were incorporated in P Si matrix material through a sol gel process. Luminescence properties of Tb3+as a function of dopant, firing temperature, composition and structure of matrices were investigated. The gels synthesized by the reaction of P2O5 or H3PO4 with tetraethoxy silane and TbCl3 as dopant were fired in air from the temperature 25～1000℃to form P Si crystalline phase. The crystal structure was determined by powder X ray diffraction. Si5O（PO4）6 were the only crystalline phase and belong to hexagonal crystal system. The emission of 5D4 7F5（～545nm） transition of Tb3+in the P Si system iscomposed of two peaks. The amount of doping Tb3+varied from 0.664%to 1.644%, and no obvious concentration quenching was observed in this doping concentration range. The intensity of Tb3+emission increased with firing temperatureincreasing and becomes stable at 800～1000℃.

Si基光电子学的研究与展望

Si基光电子学是为顺应二十一世纪以现代光通信和光电子计算机为主的信息科学技术发展需要,在全世界范围内迅速兴起的一个极为活跃的研究前沿。其最终目标之一是为了实现人们所期盼的全Si光电子集成电路。本文尝试性地评论了这一集Si材料技术、纳米技术、微电子技术以及光电子技术为一体的新型交叉学科,近年来在直接带隙Si基低维材料的设计、晶粒有序Si基纳米材料的制备与稳定高效Si基发光器件的探索等方面所取得的若干重要研究进展,并预测了全Si光电子集成技术的未来发展趋势。

Si基纳米结构的电子性质

各种Si基纳米发光材料在Si基光电子器件及其全Si光电子集成技术中具有潜在的应用前景,从理论和实验上对其电子结构进行研究,有助于我们深化对其发光机制的认识与理解。本文主要从量子限制效应发光这一角度,着重介绍了Si纳米晶粒、Ge/Si量子点,SiO2/Si超晶格和超小尺寸Si纳米团簇等不同Si基纳米结构的电子性质以及它们与发光特性之间的关系。还讨论了介质镶嵌和表面钝化对其电子结构的影响。

Si∶Er——硅新的发光途径

本文综述了研究Ｓｉ∶Ｅｒ发光的重要意义；阐述了已提出的发光机理的模型及存在的问题；并从半导体材料的角度提出了未来Ｓｉ∶Ｅｒ发光的研究重点。

β-FeSi_2半导体薄膜的研究进展

综述了半导体β-FeSi2薄膜的制备、薄膜的表征、能带的特点、电学、光学性质等方面的研究进展,讨论了几种用于Si衬底上外延生长β-FeSi2薄膜方法的优缺点,分析了制备高品质β-FeSi2薄膜所存在的理论和技术上的难题,展望了β-FeSi2薄膜作为新光电材料的应用前景.

Si_（1－x）Ge_x／Si量子阱发光材料的分子束外延生长及其结构研究

采用固源Ｓｉ分子束外延，在较高的生长温度于Ｓｉ（１００）衬底上制备出Ｓｉ１－ｘＧｅｘ／Ｓｉ量子阱发光材料．发光样品的质量和特性通过卢瑟福背散射、Ｘ射线双晶衍射及光致发光评估．背散射实验中观察到应变超晶格的反常沟道效应；Ｘ射线分析表明材料的生长是共度的、无应力释放的，结晶完整性好．低温光致发光主要是外延合金量子阱中带边激子的无声发射和横光学声子参与的激子复合．并讨论了生长温度对量于阱发光的影响．

提高Si量子点发光强度的途径

探讨了提高Si量子点发光强度的可能途径。这些方法主要包括:采用高密度和小尺寸的有序Si量子点、光学微腔结构、表面钝化处理技术和稀土发光中心掺杂。

a-SiCx∶H和β-SiC中Er缺陷结构及其1.54μm发光探索

本文提出在宽带隙的a SiCx∶H或 β SiC中共掺铒和氧以实现铒的 1 5 4μm光发射。用集团模型和电荷自洽的EHMO理论计算了 β SiC中Er缺陷的电子结构 ,并在实验上实现了Er在a SiCx∶H中的 1 5 4μm光致发光(77K) .结果表明 ,β SiC或a SiCx :H有可能是实现Er的 1 5

Ca-Si-Al-O玻璃合成Ca-α-SiAlON:Eu荧光粉及其发光性能研究

以Ca-Si-Al-O玻璃为主要原料,通过添加Eu_2O_3,采用碳热还原氮化法合成出Ca-α-Si Al ON∶Eu荧光粉体。借助X射线衍射仪(XRD)、扫描电子显微镜(SEM)、紫外-可见分光光度计和荧光分光光度计等手段,对合成Ca-α-Si Al ON∶Eu的物相组成、显微结构及发光性能进行表征。结果表明:(1)以Ca O,Al_2O_3,Si O_2为原料,合成的Ca-SiAl-O非晶玻璃具有Si O4四面体与Al O4四面体相互连接的架状结构;(2)以Ca-Si-Al-O玻璃为主要原料,通过添加Eu_2O_3,在1450℃碳热还原氮化合成出呈棱柱状形貌的Ca-α-Si Al ON粉体,其中Eu离子在Ca-α-Si Al ON中实现了良好的固溶;(3)合成的Ca-α-Si Al ON∶Eu在紫外-可见光部分具有较强的吸收,在420 nm的激发下,发射光谱的峰值波长为~570 nm,实现了黄绿光发射,归属于Eu^(2+)的4f^65d-4f^7跃迁。

实现受激光发射的Si基纳米材料与结构

提出了5类实现Si基激光器的增益介质材料,即具有强三维量子限制效应的纳米晶Si(nc-Si)薄膜,掺稀土发光中心Er的Si基纳米材料,具有预期人工改性的高纯体单晶Si,基于子带跃迁的SiGe/Si量子级联结构,以及具有受激Raman散射特性的SOI(silicon on insulator)光波导结构．评述了这些材料在近3～5年中在高效率光致发光(PL)、电致发光(EL)、光增益和受激光发射特性方面所取得的重要进展,并简要讨论了今后发展中存在的一些问题．

在SiO_2中掺Al对Au/纳米(SiO_2/Si/SiO_2)/p-Si结构电致发光的影响

利用射频磁控溅射方法 ,制成纳米 Si O2 层厚度一定而纳米 Si层厚度不同的纳米 (Si O2 / Si/ Si O2 ) / p- Si结构和纳米 (Si O2 ∶ Al/ Si/ Si O2 ∶ Al) / p- Si结构 ,用磁控溅射制备纳米 Si O2 ∶ Al时所用的 Si O2 / Al复合靶中的 Al的面积百分比为 1% .上述两种结构中 Si层厚度均为 1— 3nm ,间隔为 0 .2 nm .为了对比研究 ,还制备了 Si层厚度为零的样品 .这两种结构在 90 0℃氮气下退火 30 m in,正面蒸半透明 Au膜 ,背面蒸 Al作欧姆接触后 ,都在正向偏置下观察到电致发光 (EL ) .在一定的正向偏置下 ,EL强度和峰位以及电流都随 Si层厚度的增加而同步振荡 ,位相相同 .但掺 Al结构的发光强度普遍比不掺 Al结构强 .另外 ,这两种结构的 EL具体振荡特性有明显不同 .对这两种结构的电致发光的物理机制和 Si O2 中掺

SiGe/Si异质结缺陷的光致发光研究

本文用光致发光(PL)光谱对Si0.87Ge0.13/Si异质结的缺陷进行了研究。对PL光谱中与SiGe外延层应变驰豫产生的失配位错相关的D-Band进行了分析,发现应变驰豫同时在SiGe层和Si衬底中诱生了位错。由于在PL光谱中观察到了D1而没有观察到D2,因此D1,D2很可能并不对应于相同的位错。通过进一步的分析,我们推测引起SiGe/Si异质结的PL光谱中D-Band的位错的微观结构很可能和Si-Si相关。

Si _3O cluster:excited properties under external electric field and oxygen-deficient defect models

This paper investigates the excited states of Si3O molecule by using the single-excitation configuration interaction and density functional theory. It finds that the visible light absorption spectrum of Si3O molecule comprises the yellow and the purple light without external electric field, however all the visible light is included except the green light under the action of external electric field. Oxygen-deficient defects, which also can be found in Si3O molecule, have been used to explain the 1 from silicon-based materials but the microstructures of the materials are still uncertain Our results accord with the experimental values perfectly, this fact suggests that the structure of Si3O molecule is expected to be one of the main basic structures of the materials, so the oxygen-deficient defect structural model for Si3O molecule also has been provided to research the structures of materials.