By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide（RW） AlGaInAs/AlGaAs distributed feedback（DFB） laser diode,a front facet output power of 30mW is obtained at ...By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide（RW） AlGaInAs/AlGaAs distributed feedback（DFB） laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.展开更多
Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800- 850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback （DFB...Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800- 850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback （DFB） laser diode, a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic. The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density, higher gain, lower Auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained GaAs/AlGaAs DFB laser diode.展开更多
Integrated electro-absorption-modulated distributed feedback laser diodes(EMLs)are attracting much interest in optical communications for the advantages of a compact structure,low power consumption,and high-speed modu...Integrated electro-absorption-modulated distributed feedback laser diodes(EMLs)are attracting much interest in optical communications for the advantages of a compact structure,low power consumption,and high-speed modulation.In integrated EML,the microwave interaction between the distributed feedback laser diode(DFB-LD)and the electro-absorption modulator(EAM)has a nonnegligible influence on the modulation performance,especially at the high-frequency region.In this paper,integrated EML was investigated as a three-port network with two electrical inputs and a single optical output,where the scattering matrix of the integrated device was theoretically deduced and experimentally measured.Based on the theoretical model and the measured data,the microwave equivalent circuit model of the integrated device was established,from which the microwave interaction between DFB-LD and EAM was successfully extracted.The results reveal that the microwave interaction within integrated EML contains both the electrical isolation and optical coupling.The electrical isolation is bidirectional while the optical coupling is directional,which aggravates the microwave interaction in the direction from DFB-LD to EAM.展开更多
The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic phot...The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic photolithography and wet etching. Images of optical microscopy, scanning electron microscopy and atomic force microscopy show that the grating has a period of 240 nm, duty cycle of 0.25, depth of 80 nm, with perfect surface morphology, good fringe continuity and uniformity.展开更多
Tunable diode laser absorption spectroscopy （TDLAS） is a new method to detect trace-gas qualitatively or quantificationally based on the scan characteristic of the diode laser to obtain the absorption spectroscopy i...Tunable diode laser absorption spectroscopy （TDLAS） is a new method to detect trace-gas qualitatively or quantificationally based on the scan characteristic of the diode laser to obtain the absorption spectroscopy in the characteristic absorption region. A time-sharing scanning open-path TDLAS system using two near infrared distributed feedback （DFB） tunable diode lasers is designed to detect CH4 and H2S in leakage of natural gas. A low-cost Fresnel lens is used in this system as receiving optics which receives the laser beam reflected by a solid corner cube reflector with a distance of up to about 60 m. High sensitivity is achieved by means of wavelength-modulation spectroscopy with second-harmonic detection. The minimum detection limits of 1.1 ppm-m for CH4 and 15 ppm-m for H2S are demonstrated with a total optical path of 120 m. The simulation monitoring experiment of nature gas leakage was carried out with this system. According to the receiving light efficiency of optical system and detectable minimum light intensity of detection, the detectable optical path of the system can achieve 1 - 2 km. The sensor is suitable for natural gas leakage monitoring application.展开更多
In recent years,organic light-emitting device technology has expanded from organic light-emitting diodes(OLEDs)to organic semiconductor laser diodes(OSLDs)with the progress of sophisticated molecular and device archit...In recent years,organic light-emitting device technology has expanded from organic light-emitting diodes(OLEDs)to organic semiconductor laser diodes(OSLDs)with the progress of sophisticated molecular and device architectural designs.In OLEDs,the development of thermally activated delayed fluorescence molecules has been intensively investigated recently.As a result,the internal quantum efficiency of OLEDs containing relatively simple aromatic compounds without precious metals has reached almost 100%.Furthermore,incorporating a distributed feedback resonator structure into the OLED architecture has yielded OSLDs that exhibit the features of current-pumped lasing.In this short review,the authors describe the recent paradigm shift from OLEDs to OSLDs,mainly fromthe perspective of materials innovation.展开更多
光栅结构的设计和制作直接决定了分布反馈（DFB）半导体激光器光电特性的优劣。采用传输矩阵法模拟了不同光栅耦合因子下随机相位对均匀光栅DFB芯片特性的影响,获得了芯片的光电参数分布。通过分析耦合因子对芯片光电参数分布的影响,提...光栅结构的设计和制作直接决定了分布反馈（DFB）半导体激光器光电特性的优劣。采用传输矩阵法模拟了不同光栅耦合因子下随机相位对均匀光栅DFB芯片特性的影响,获得了芯片的光电参数分布。通过分析耦合因子对芯片光电参数分布的影响,提高了DFB芯片的成品率。设计并制备了基于Al Ga In As材料体系的脊波导DFB激光器,最终使芯片双峰比例仅为7.7%、成品率达到60%。对合格品在-40~105℃下的P-I特性和在-40~85℃下的光谱进行了测试,结果表明芯片性能优良,芯片远场发散角为25°和21°。芯片的小信号频带响应和眼图测试结果表明芯片完全满足2.5 Gbit/s的应用要求。展开更多
文摘By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide（RW） AlGaInAs/AlGaAs distributed feedback（DFB） laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.
基金Project supported by the National Natural Science Foundation of China （Grant No 10374085）. Acknowledgment The authors would like to thank the members of the nano-opotoelectronics laboratory for helpful discussion.
文摘Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800- 850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback （DFB） laser diode, a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic. The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density, higher gain, lower Auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained GaAs/AlGaAs DFB laser diode.
基金This work was supported by the National Key Research and Development Program of China under Grant No.2018YFE0201900the National Natural Science Foundation of China under Grants No.61927821 and No.61875240the Joint Research Fund of Ministry of Education of China under Grant No.6141A02022436.
文摘Integrated electro-absorption-modulated distributed feedback laser diodes(EMLs)are attracting much interest in optical communications for the advantages of a compact structure,low power consumption,and high-speed modulation.In integrated EML,the microwave interaction between the distributed feedback laser diode(DFB-LD)and the electro-absorption modulator(EAM)has a nonnegligible influence on the modulation performance,especially at the high-frequency region.In this paper,integrated EML was investigated as a three-port network with two electrical inputs and a single optical output,where the scattering matrix of the integrated device was theoretically deduced and experimentally measured.Based on the theoretical model and the measured data,the microwave equivalent circuit model of the integrated device was established,from which the microwave interaction between DFB-LD and EAM was successfully extracted.The results reveal that the microwave interaction within integrated EML contains both the electrical isolation and optical coupling.The electrical isolation is bidirectional while the optical coupling is directional,which aggravates the microwave interaction in the direction from DFB-LD to EAM.
基金Project supported by the National Natural Science Foundation of China(No.11474036)the National Key Lab of High Power Semiconductor Lasers Foundations(No.9140C310103120C3101)
文摘The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic photolithography and wet etching. Images of optical microscopy, scanning electron microscopy and atomic force microscopy show that the grating has a period of 240 nm, duty cycle of 0.25, depth of 80 nm, with perfect surface morphology, good fringe continuity and uniformity.
基金the Knowledge Innovation Program of Chinese Academy of Sciences(No.KJCX2-SW-W27)the National Natural Science Foundation of China(No.50534050)
文摘Tunable diode laser absorption spectroscopy （TDLAS） is a new method to detect trace-gas qualitatively or quantificationally based on the scan characteristic of the diode laser to obtain the absorption spectroscopy in the characteristic absorption region. A time-sharing scanning open-path TDLAS system using two near infrared distributed feedback （DFB） tunable diode lasers is designed to detect CH4 and H2S in leakage of natural gas. A low-cost Fresnel lens is used in this system as receiving optics which receives the laser beam reflected by a solid corner cube reflector with a distance of up to about 60 m. High sensitivity is achieved by means of wavelength-modulation spectroscopy with second-harmonic detection. The minimum detection limits of 1.1 ppm-m for CH4 and 15 ppm-m for H2S are demonstrated with a total optical path of 120 m. The simulation monitoring experiment of nature gas leakage was carried out with this system. According to the receiving light efficiency of optical system and detectable minimum light intensity of detection, the detectable optical path of the system can achieve 1 - 2 km. The sensor is suitable for natural gas leakage monitoring application.
文摘In recent years,organic light-emitting device technology has expanded from organic light-emitting diodes(OLEDs)to organic semiconductor laser diodes(OSLDs)with the progress of sophisticated molecular and device architectural designs.In OLEDs,the development of thermally activated delayed fluorescence molecules has been intensively investigated recently.As a result,the internal quantum efficiency of OLEDs containing relatively simple aromatic compounds without precious metals has reached almost 100%.Furthermore,incorporating a distributed feedback resonator structure into the OLED architecture has yielded OSLDs that exhibit the features of current-pumped lasing.In this short review,the authors describe the recent paradigm shift from OLEDs to OSLDs,mainly fromthe perspective of materials innovation.
文摘光栅结构的设计和制作直接决定了分布反馈（DFB）半导体激光器光电特性的优劣。采用传输矩阵法模拟了不同光栅耦合因子下随机相位对均匀光栅DFB芯片特性的影响,获得了芯片的光电参数分布。通过分析耦合因子对芯片光电参数分布的影响,提高了DFB芯片的成品率。设计并制备了基于Al Ga In As材料体系的脊波导DFB激光器,最终使芯片双峰比例仅为7.7%、成品率达到60%。对合格品在-40~105℃下的P-I特性和在-40~85℃下的光谱进行了测试,结果表明芯片性能优良,芯片远场发散角为25°和21°。芯片的小信号频带响应和眼图测试结果表明芯片完全满足2.5 Gbit/s的应用要求。
