Wavelength-tunable organic semiconductor lasers based on mechanically stretchable polydimethylsiloxane (PDMS) gratings were developed. The intrinsic stretchability of PDMS was explored to modulate the period of the di...Wavelength-tunable organic semiconductor lasers based on mechanically stretchable polydimethylsiloxane (PDMS) gratings were developed. The intrinsic stretchability of PDMS was explored to modulate the period of the distributed feedback gratings for fine tuning the lasing wavelength. Notably, elastic lasers based on three typical light-emitting molecules show com-parable lasing threshold values analogous to rigid devices and a continuous wavelength tunability of about 10 nm by mechanic-al stretching. In addition, the stretchability provides a simple solution for dynamically tuning the lasing wavelength in a spec-tral range that is challenging to achieve for inorganic counterparts. Our work has provided a simple and efficient method of fab-ricating tunable organic lasers that depend on stretchable distributed feedback gratings, demonstrating a significant step in the advancement of flexible organic optoelectronic devices.展开更多
We propose a theoretical model to describe external-cavity distributed feedback semiconductor lasers and investigate the impact of the number of external feedback points on linewidth and side-mode suppression ratio th...We propose a theoretical model to describe external-cavity distributed feedback semiconductor lasers and investigate the impact of the number of external feedback points on linewidth and side-mode suppression ratio through numerical simulation. The simulation results demonstrate that the linewidth of external-cavity semiconductor lasers can be reduced by increasing the external cavity length and feedback ratio, and adding more external feedback points can further narrow the linewidth and enhance the side mode suppression ratio. This research provides insight into the external cavity distributed feedback mechanism and can guide the design of high-performance external cavity semiconductor lasers. .展开更多
Integrated electro-absorption-modulated distributed feedback laser diodes(EMLs)are attracting much interest in optical communications for the advantages of a compact structure,low power consumption,and high-speed modu...Integrated electro-absorption-modulated distributed feedback laser diodes(EMLs)are attracting much interest in optical communications for the advantages of a compact structure,low power consumption,and high-speed modulation.In integrated EML,the microwave interaction between the distributed feedback laser diode(DFB-LD)and the electro-absorption modulator(EAM)has a nonnegligible influence on the modulation performance,especially at the high-frequency region.In this paper,integrated EML was investigated as a three-port network with two electrical inputs and a single optical output,where the scattering matrix of the integrated device was theoretically deduced and experimentally measured.Based on the theoretical model and the measured data,the microwave equivalent circuit model of the integrated device was established,from which the microwave interaction between DFB-LD and EAM was successfully extracted.The results reveal that the microwave interaction within integrated EML contains both the electrical isolation and optical coupling.The electrical isolation is bidirectional while the optical coupling is directional,which aggravates the microwave interaction in the direction from DFB-LD to EAM.展开更多
A 1.3 μm distributed feedback(DFB) semiconductor laser with equivalent λ/4 phase shift based on reconstruction equivalent chirp(REC) technique is numerically studied and experimentally demonstrated.The simulation re...A 1.3 μm distributed feedback(DFB) semiconductor laser with equivalent λ/4 phase shift based on reconstruction equivalent chirp(REC) technique is numerically studied and experimentally demonstrated.The simulation results show that the 1.3 μm DFB laser with equivalent λ/4 phase shift based on the REC technique performs the same as that of actual λ/4 phase shift DFB laser,with nearly the same P-I curves,the internal power distributions and the output ASE spectra.Compared with the traditional λ/4 phase shift DFB laser,the REC based laser only changes the sampling structures with the uniform seed waveguide grating instead of the actual grating structures.As a result,the fabrication of such laser will be very easy.In this paper,we successfully fabricated the 1.3 μm DFB laser based on the REC technique for the first time to the best of our knowledge.展开更多
To achieve high pumping efficiency and stability, a wavelength stabilized 980 nm broad area distributed feedback laser was realized. A nanoimprint lithography technique was used to fabricate the first-order gratings. ...To achieve high pumping efficiency and stability, a wavelength stabilized 980 nm broad area distributed feedback laser was realized. A nanoimprint lithography technique was used to fabricate the first-order gratings. The stripe width was 90 #m and the cavity length was 2 mm. Under continuous wave condition, the output laser power reached 1.2 W, with the slope efficiency of 0.7 W/A. The current and thermal dependence of the spectrum peak was measured to be approximately 0.19 nm/A and 0.064 nm/K respectively, and the wavelength-locking range reached over 50 ℃.展开更多
We report the fabrication details of a monolithically integrated electro-absorption modulated distributed feedback laser （EML） based on the ion-implantation induced quantum well intermixing （QWI） technique. To wel...We report the fabrication details of a monolithically integrated electro-absorption modulated distributed feedback laser （EML） based on the ion-implantation induced quantum well intermixing （QWI） technique. To well-preserve material quality in the laser region, thermal-oxide SiO2 is deposited before implantation and the ion-implantation buffer layer is etched before annealing. Thirteen pairs quantum well and barrier are employed to compensate deterioration of the modulator＇s extinction ratio （ER） caused by the QWI process. The fabricated EML exhibits an 18 dB static ER at 5 V reverse bias. The 3 dB small signal modulation band- width of modulator is over 13.5 GHz indicating that this EML is a suitable light source for over 16 Gb/s optical transmission links.展开更多
基金financial support from the National Natural Science Foundation of China (21835003, 91833304,21422402, 62274097, 21674050, 62004106)the National Key Basic Research Program of China (2014CB648300,2017YFB0404501)+11 种基金the Natural Science Foundation of Jiangsu Province (BE2019120, BK20160888)Program for Jiangsu Specially-Appointed Professor (RK030STP15001)the Six Talent Peaks Project of Jiangsu Province (TD-XCL-009)the333 Project of Jiangsu Province (BRA2017402)the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (20KJB140005)China Postdoctoral Science Foundation (2020M671553)the NUPT"1311 Project"and Scientific Foundation (NY217169, NY215062, NY215107,NY217087)the Leading Talent of Technological Innovation of National Ten-Thousands Talents Program of Chinathe Excellent Scientific and Technological Innovative Teams of Jiangsu Higher Education Institutions (TJ217038)the Postgraduate Research&Practice Innovation Program of Jiangsu Province (SJCX21-0297)the Synergetic Innovation Center for Organic Electronics and Information Displaysthe Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
文摘Wavelength-tunable organic semiconductor lasers based on mechanically stretchable polydimethylsiloxane (PDMS) gratings were developed. The intrinsic stretchability of PDMS was explored to modulate the period of the distributed feedback gratings for fine tuning the lasing wavelength. Notably, elastic lasers based on three typical light-emitting molecules show com-parable lasing threshold values analogous to rigid devices and a continuous wavelength tunability of about 10 nm by mechanic-al stretching. In addition, the stretchability provides a simple solution for dynamically tuning the lasing wavelength in a spec-tral range that is challenging to achieve for inorganic counterparts. Our work has provided a simple and efficient method of fab-ricating tunable organic lasers that depend on stretchable distributed feedback gratings, demonstrating a significant step in the advancement of flexible organic optoelectronic devices.
文摘We propose a theoretical model to describe external-cavity distributed feedback semiconductor lasers and investigate the impact of the number of external feedback points on linewidth and side-mode suppression ratio through numerical simulation. The simulation results demonstrate that the linewidth of external-cavity semiconductor lasers can be reduced by increasing the external cavity length and feedback ratio, and adding more external feedback points can further narrow the linewidth and enhance the side mode suppression ratio. This research provides insight into the external cavity distributed feedback mechanism and can guide the design of high-performance external cavity semiconductor lasers. .
基金This work was supported by the National Key Research and Development Program of China under Grant No.2018YFE0201900the National Natural Science Foundation of China under Grants No.61927821 and No.61875240the Joint Research Fund of Ministry of Education of China under Grant No.6141A02022436.
文摘Integrated electro-absorption-modulated distributed feedback laser diodes(EMLs)are attracting much interest in optical communications for the advantages of a compact structure,low power consumption,and high-speed modulation.In integrated EML,the microwave interaction between the distributed feedback laser diode(DFB-LD)and the electro-absorption modulator(EAM)has a nonnegligible influence on the modulation performance,especially at the high-frequency region.In this paper,integrated EML was investigated as a three-port network with two electrical inputs and a single optical output,where the scattering matrix of the integrated device was theoretically deduced and experimentally measured.Based on the theoretical model and the measured data,the microwave equivalent circuit model of the integrated device was established,from which the microwave interaction between DFB-LD and EAM was successfully extracted.The results reveal that the microwave interaction within integrated EML contains both the electrical isolation and optical coupling.The electrical isolation is bidirectional while the optical coupling is directional,which aggravates the microwave interaction in the direction from DFB-LD to EAM.
文摘A 1.3 μm distributed feedback(DFB) semiconductor laser with equivalent λ/4 phase shift based on reconstruction equivalent chirp(REC) technique is numerically studied and experimentally demonstrated.The simulation results show that the 1.3 μm DFB laser with equivalent λ/4 phase shift based on the REC technique performs the same as that of actual λ/4 phase shift DFB laser,with nearly the same P-I curves,the internal power distributions and the output ASE spectra.Compared with the traditional λ/4 phase shift DFB laser,the REC based laser only changes the sampling structures with the uniform seed waveguide grating instead of the actual grating structures.As a result,the fabrication of such laser will be very easy.In this paper,we successfully fabricated the 1.3 μm DFB laser based on the REC technique for the first time to the best of our knowledge.
文摘To achieve high pumping efficiency and stability, a wavelength stabilized 980 nm broad area distributed feedback laser was realized. A nanoimprint lithography technique was used to fabricate the first-order gratings. The stripe width was 90 #m and the cavity length was 2 mm. Under continuous wave condition, the output laser power reached 1.2 W, with the slope efficiency of 0.7 W/A. The current and thermal dependence of the spectrum peak was measured to be approximately 0.19 nm/A and 0.064 nm/K respectively, and the wavelength-locking range reached over 50 ℃.
基金supported by the National"863"Project of China(Nos.2013AA014502 and 2011AA010303)the National Nature Science Foundation of China(Nos.61474112,61320106013,61274071,61090392,and61006044)the National"973"Program of China(No.2012CB934202)
文摘We report the fabrication details of a monolithically integrated electro-absorption modulated distributed feedback laser （EML） based on the ion-implantation induced quantum well intermixing （QWI） technique. To well-preserve material quality in the laser region, thermal-oxide SiO2 is deposited before implantation and the ion-implantation buffer layer is etched before annealing. Thirteen pairs quantum well and barrier are employed to compensate deterioration of the modulator＇s extinction ratio （ER） caused by the QWI process. The fabricated EML exhibits an 18 dB static ER at 5 V reverse bias. The 3 dB small signal modulation band- width of modulator is over 13.5 GHz indicating that this EML is a suitable light source for over 16 Gb/s optical transmission links.
