A Programmable 2.4GHz CMOS Multi-Modulus Frequency Divider

A programmable multi-modulus frequency divider is designed and implemented in a 0. 35μm CMOS process. The multi-modulus frequency divider is a single chip with two dividers in series,which are divided by 4 or 5 prescaler and by 128-255 multi-modulus frequency divider. In the circuit design, power and speed trade-offs are analyzed for the prescaler, and power optimization techniques are used according to the input frequency of each divider cell for the 128-255 multimodulus frequency divider. The chip is designed with ESD protected I/O PAD. The dividers chain can work as high as 2.4GHz with a single ended input signal and beyond 2.6GHz with differential input signals. The dual-modulus prescaler consumes 11mA of current while the 128-255 multi-modulus frequency divider consumes 17mA of current with a 3.3V power supply. The core area of the die without PAD is 0.65mm × 0.3mm. This programmable multi-modulus frequency divider can be used for 2.4GHz ISM band PLL-based frequency synthesizers. To our knowledge, this is the first reported multi-modulus frequency divider with this structure in China.

0.18μm CMOS programmable frequency divider design for DVB-T

The implementation of a programmable frequency divider, which is one of the components of the phase-locked loop （PLL） frequency synthesizer for digital video broadcastingterrestrial （DVB-T） and other modem communication systems, is presented. By cooperating with a dual-modulus prescaler, this divider can realize an integer frequency division from 926 to 1 387. Besides the traditional standard cell design flow, such as logic synthesis, placement and routing, the interactions between front-end and back-end are also considered to optimize the design flow under deep submicron technology. By back-annotating the back-end information to front-end design, a custom wire-load model is created which is more practical compared with the default model. This divider has been fabricated in TSMC 0. 18μm CMOS technology using Artisan standard cell library. The chip area is 675 μm × 475 μm and the power consumption is about 2 mW under a 1.8 V power supply. Measurement results show that it works correctly and can realize a frequency division with high precision.

An 8.5GHz 1∶8 Frequency Divider in 0.35μm CMOS Technology

An 1∶8 frequency divider is designed and realized in a 0 35μm standard CMOS technology.The chip consists of three stages of 1∶2 divider cells,which are constructed with source couple logic (SCL) flip flops.By revising the traditional topology of SCL flip flop,a divider with better performances is got.The results of measurement show that the whole chip achieves the frequency division at more than 8 5GHz.Each 1∶2 divider consumes about 11mW from a 3 3V supply.The divider can be used in RF and optic fiber transceivers and other high speed systems.

Design of a Frequency Divider with Reduced Complexity Based on a Resonant Tunneling Diode

A novel edge-triggered D-flip-flop based on a resonant tunneling diode （RTD） is proposed and used to construct a binary frequency divider. The design is discussed in detail and the performance of the circuit is verified using SPICE. Relying on the nonlinear characteristics of RTD,we reduced the number of components used in our DFF circuit to only half of that required using conventional CMOS SCFL technology.

Design of 0.18 μm CMOS programmable frequency divider based on standard cells

The design of a programmable frequency divider, which is one of the components of the phase-locked loop （PLL） frequency synthesizer for transmitter and receiver in IEEE 802. 11 a standard, is investigated. The main steps in very large-scale integration （VLSI） design flow such as logic synthesis, floorplan and placement ＆ routing （P ＆ R） are introduced. By back-annotating the back-end information to the front-end design, the custom wire-load model is created and used for optimizing the design flow under deep submicron technology. The programmable frequency divider is implemented based on Artisan TSMC （Taiwan Semicoductor Manufacturing Co. Ltd. ）0. 18μm CMOS （complementary metal-oxide-semiconductor） standard cells and fabricated. The Chip area is 1 360. 5μm^2 and can work in the range of 100 to 200 MHz. The measurement results indicate that the design conforms to the frequency division precision.

A fractional frequency divider based on phase switching and negative feedback delta-sigma modulator for MMMS applications

A fractional frequency divider based on phase switching and negative feedback delta-sigma modulator(NF-DSM) is presented. The phase switching circuit, realized by switching 8 signals generated by a divider-by-4 circuit, is adopted to reduce the frequency division step. The NF-DSM, which can obtain smooth output spectra, is proposed to generate the fractional part of the division ratio, moreover, the integer part of the division ratio is realized by a divider-by-2/3 circuit chain. Fabricated in TSMC 0.18 μm RF CMOS technology, the fractional frequency divider achieves a measured operation frequency from 0.5 GHz to 8 GHz. With a 1.8 V supply voltage, the maximum current consumption of the whole divider is 17.5 mA, and the chip area is 0.58 mm^2, including the pads.

Residual Phase Noise and Time Jitters of Single-Chip Digital Frequency Dividers

In this paper, we demonstrate the residual phase noise of a few microwave frequency dividers which usually limit the performance of frequency synthesizers. In order to compare these dividers under different operation frequencies, we calculate additional time jitters of these dividers by using the measured phase noise. The time jitters are various from -0.1 fs to 43 fs in a bandwidth from 1 Hz to 100 Hz in dependent of models and operation frequencies. The HMC series frequency dividers exhibit outstanding performance for high operation frequencies, and the time jitters can be sub-fs. The time jitters of SP8401, MC10EP139, and MC100LVEL34 are comparable or even below that of HMC series for low operation frequencies.

CMOS Direct-Injection Divide-by-3 Injection-Locked Frequency Dividers

This paper proposes CMOS LC-tank divide-by-3 injection locked frequency dividers(ILFDs)fabricated in 0.18μn and 90nm CMOS process and describes the circuit design,operation principle and measurement results of the ILFDs.The ILFDs use two injection series-MOSFETs across the LC resonator and a differential injection signal is applied to the gates of injection MOSFETs.The direct-injection divide-by-3 ILFDs are potential for radio-frequency application and can have wide locking range.

A 0.35μm CMOS 6.1GHz 1∶4 Static Frequency Divider

A 1∶4 static frequency divider has been designed and realized in a 0.35-micron standard CMOS technology. The chip consists of two identical 1∶2 divider cells, which are based on SCL (Source Coupled Logic) flip-flops. By revising the traditional topology of SCL flip-flop, we get a divider with better performances. Measurement results show that the whole chip achieves the frequency division at more than 6GHz. Each 1∶2 divider consumes 11mW from a 3.3V supply. The divider can be used in RF and Optic-fiber Transceivers and other high-speed systems.

Frequency synthesizer for DRM/DAB/AM/FM RF front-end

This paper describes a wideband low phase noise frequency synthesizer.It operates in the multi-band including digital radio mondiale DRM digital audio broadcasting DAB amplitude modulation AM and frequency modulation FM .In order to cover the signals of the overall frequencies a novel frequency planning and a new structure are proposed. A wide-band low-phase-noise low-power voltage-control oscillator VCO and a high speed wide band high frequency division ratio pulse swallow frequency divider with a low power consumption are presented.The monolithic DRM/DAB/AM/FM frequency synthesizer chip is also fabricated in a SMIC＇s 0.18-μm CMOS process.The die area is 1 425 μm ×795 μm including the test buffer and pads. The measured results show that the VCO operating frequency range is from 2.22 to 3.57 GHz the measured phase noise of the VCO is 120.22 dBc/Hz at 1 MHz offset the pulse swallow frequency divider operation frequency is from 0.9 to 3.4 GHz.The phase noise in the phase-locked loop PLL is-59.52 dBc/Hz at 10 kHz offset and fits for the demand of the DRM/DAB/AM/FM RF front-end. The proposed frequency synthesizer consumes 47 mW including test buffer under a 1.8 V supply.

A 83 GHz InP DHBT static frequency divider

A static frequency divider is presented using 0.7μm lnP DHBTs with 280 GHz ft/fmax. The divider is based on ECL master-slave D-flip-flop topology with 30 HBTs and 20 resistors with a chip size 0.62 ×0.65 mm^2. The circuits use peaking inductance as a part of the loads to maximize the highest clock rate. Momentum simulation is used to accurately characterize the effect of the clock feedback lines at the W band. Test results show that the divider can operate from 1 GHz up to 83 GHz. Its phase noise is 139 dBc/Hz with 100 kHz offset. The power dissipation of divider core is 350 mW.

A fractional-N frequency divider for multi-standard wireless transceiver fabricated in 0.18μm CMOS process

With the rapid evolution of wireless communication technology, integrating various communication modes in a mobile terminal has become the popular trend. Because of this, multi-standard wireless technology is one of the hot spots in current research. This paper presents a wideband fractional-N frequency divider of the multi-standard wireless transceiver for many applications. High-speed divider-by-2 with traditional source- coupled-logic is designed for very wide band usage. Phase switching technique and a chain of divider-by-2/3 are applied to the programmable frequency divider with 0.5 step. The phase noise of the whole frequency synthesizer will be decreased by the narrower step of programmable frequency divider. A-E modulator is achieved by an improved MASH 1-1-1 structure. This structure has excellent performance in many ways, such as noise, spur and input dynamic range. Fabricated in TSMC 0.18/tin CMOS process, the fractional-N frequency divider occupies a chip area of 1130 × 510μm^2 and it can correctly divide within the frequency range of 0.8-9 GHz. With 1.8 V supply voltage, its division ratio ranges from 62.5 to 254 and the total current consumption is 29 mA.

An InGaAs/InP 40 GHz CML static frequency divider

Static frequency dividers are widely used as a circuit performance benchmark or figure-of-merit indicator to gauge a particular device technology’s ability to implement high speed digital and integrated high performance mixed-signal circuits.We report a 2：1 static frequency divider in InGaAs/InP heterojunction bipolar transistor technology.This is the first InP based digital integrated circuit ever reported on the mainland of China. The divider is implemented in differential current mode logic（CML） with 30 transistors.The circuit operated at a peak clock frequency of 40 GHz and dissipated 650 mW from a single -5 V supply.

A broadband regenerative frequency divider in InGaP/GaAs HBT technology

A dynamic divide-by-two regenerative GaP/GaAs heterojunction bipolar transistors （HBTs） frequency divider （RFD） is presented in a 60-GHz-fT Intechnology. To achieve high operation bandwidth, active loads instead of resistor loads are incorporated into the RFD. On-wafer measurement shows that the divider is operating from 10 GHz up to at least 40 GHz, limited by the available input frequency. The maximum operation frequency of the divider is found to be much higher than fT/2 of the transistor, and also the divider has excellent input sensitivity. The divider consumes 300.85 mW from 5 V supply and occupies an area of 0.47 × 0.22 mm^2.

A 220 GHz dynamic frequency divider in 0.5μm InP DHBT technology

A high performance 3 inch 0.5 μm InP DHBT technology with three interconnecting layers has been developed.The epitaxial layer structure and geometry parameters of the device were carefully studied to get the required performances.The 0.5 × 5 μm^2 InP DHBTs demonstrated ft = 350 GHz,f（max） = 532 GHz and BV（CEO） = 4.8 V,which were modeled using Agilent-IIBT large signal model.As a benchmark circuit,a dynamic frequency divider operating from 110 to 220 GHz has been designed,fabricated and measured with this technology.The ultra-high-speed 0.5 μm InP DHBT technology offers a combination of ultra-high-speed and high breakdown voltage,which makes it an ideal candidate for next generation 100 GHz＋ mixed signal integrated circuits.

A Ka-band wide locking range frequency divider with high injection sensitivity

This paper proposes a direct injection-locked frequency divider（ILFD） with a wide locking range in the Ka-band. A complementary cross-coupled architecture is used to enhance the overdriving voltage of the switch transistor so that the divider locking range is extended efficiently. New insights into the locking range and output power are proposed. A new method to analyze and optimize the injection sensitivity is presented and a layout technique to reduce the parasitics of the cross-coupled transistors is applied to decrease the frequency shift and the locking range degradation. The circuit is designed in a standard 90-nm CMOS process. The total locking range of the ILFD is 43.8% at 34.5 GHz with an incident power of –3.5 dBm. The divider IC consumes 3.6 mW of power at the supply voltage of 1.2 V. The chip area including the pads is 0.50.5 mm2.

A 7-27 GHz DSCL divide-by-2 frequency divider

This paper presents the design and analysis of a high speed broadband divide-by-2 frequency divider. The proposed divider is a dynamic source-coupled logic（DSCL） structure formed with two dynamic-loading master-slave D latches,which enables high frequency operation and low power consumption.This divider exhibits a wide locking range from 7-27 GHz and the minimum power consumption is only 1.22 mW from a 1.2 V supply.The input sensitivity is as low as -25.4 dBm across the operating frequency range.This chip occupies 685×430μm^2 area with two on-chip spiral inductors in 90 nm CMOS process.

A 5-GHz programmable frequency divider in 0.18-μm CMOS technology

A 5-GHz CMOS programmable frequency divider whose modulus can be varied from 2403 to 2480 for 2.4-GHz ZigBee applications is presented.The divider based on a dual-modulus prescaler（DMP） and pulse-swallow counter is designed to reduce power consumption and chip area.Implemented in the 0.18-μm mixed-signal CMOS process,the divider operates over a wide range of 1-7.4 GHz with an input signal of 7.5 dBm;the programmable divider output phase noise is -125.3 dBc/Hz at an offset of 100 kHz.The core circuit without test buffer consumes 4.3 mA current from a 1.8 V power supply and occupies a chip area of approximately 0.015 mm^2.The experimental results indicate that the programmable divider works well for its application in frequency synthesizers.

A novel wideband low phase noise 2:1 frequency divider

This paper describes a novel low-power wideband low-phase noise divide-by-two frequency divider. Hereby,a new D-latch topology is introduced.By means of conventional dynamic source-coupled logic techniques, the divider demonstrates a wideband with low phase noise by adding a switch transistor between the clock port and the couple node of the input NMOS pair in the D latch.The chip was fabricated in the 90-nm CMOS process of IBM.The measurement results show that the frequency divider has an input frequency range from 0.05 to 10 GHz and the phase noise is-159.8 dBc/Hz at 1 MHz offset from the carrier.Working at 10 GHz,the frequency divider dissipates a total power of 9.12 mW from a 1.2 V supply while occupying only 0.008 mm~2 of the core die area.

A 75 GHz regenerative dynamic frequency divider with active transformer using InGaAs/InP HBT technology

This letter presents a high speed 2 ： 1 regenerative dynamic frequency divider with an active transformer fabricated in 0.7μm InP DHBT technology with fTof 165 GHz and fmax of 230 GHz. The circuit includes a two-stage active transtbrmer, input buffer, divider core and output buffer. The core part of the frequency divider is composed of a double-balanced active mixer （widely known as the Gilbert cell） and a regenerative feedback loop. The active transformer with two stages can contribute to positive gain and greatly improve phase difference. Instead of the passive transformer, the active one occupies a much smaller chip area. The area of the chip is only 469 × 414μm2 and it entirely consumes a total DC power of only 94.6 mW from a single -4.8 V DC supply. The measured results present that the divider achieves an operating frequency bandwidth from 75 to 80 GHz, and performs a -23 dBm maximunl output power at 37.5 GHz with a 0 dBm input signal of 75 GHz.