A high performance 3 inch 0.5 μm InP DHBT technology with three interconnecting layers has been developed.The epitaxial layer structure and geometry parameters of the device were carefully studied to get the required...A high performance 3 inch 0.5 μm InP DHBT technology with three interconnecting layers has been developed.The epitaxial layer structure and geometry parameters of the device were carefully studied to get the required performances.The 0.5 × 5 μm^2 InP DHBTs demonstrated ft = 350 GHz,f（max） = 532 GHz and BV（CEO） = 4.8 V,which were modeled using Agilent-IIBT large signal model.As a benchmark circuit,a dynamic frequency divider operating from 110 to 220 GHz has been designed,fabricated and measured with this technology.The ultra-high-speed 0.5 μm InP DHBT technology offers a combination of ultra-high-speed and high breakdown voltage,which makes it an ideal candidate for next generation 100 GHz＋ mixed signal integrated circuits.展开更多
This letter presents a high speed 2 ： 1 regenerative dynamic frequency divider with an active transformer fabricated in 0.7μm InP DHBT technology with fTof 165 GHz and fmax of 230 GHz. The circuit includes a two-sta...This letter presents a high speed 2 ： 1 regenerative dynamic frequency divider with an active transformer fabricated in 0.7μm InP DHBT technology with fTof 165 GHz and fmax of 230 GHz. The circuit includes a two-stage active transtbrmer, input buffer, divider core and output buffer. The core part of the frequency divider is composed of a double-balanced active mixer （widely known as the Gilbert cell） and a regenerative feedback loop. The active transformer with two stages can contribute to positive gain and greatly improve phase difference. Instead of the passive transformer, the active one occupies a much smaller chip area. The area of the chip is only 469 × 414μm2 and it entirely consumes a total DC power of only 94.6 mW from a single -4.8 V DC supply. The measured results present that the divider achieves an operating frequency bandwidth from 75 to 80 GHz, and performs a -23 dBm maximunl output power at 37.5 GHz with a 0 dBm input signal of 75 GHz.展开更多
文摘A high performance 3 inch 0.5 μm InP DHBT technology with three interconnecting layers has been developed.The epitaxial layer structure and geometry parameters of the device were carefully studied to get the required performances.The 0.5 × 5 μm^2 InP DHBTs demonstrated ft = 350 GHz,f（max） = 532 GHz and BV（CEO） = 4.8 V,which were modeled using Agilent-IIBT large signal model.As a benchmark circuit,a dynamic frequency divider operating from 110 to 220 GHz has been designed,fabricated and measured with this technology.The ultra-high-speed 0.5 μm InP DHBT technology offers a combination of ultra-high-speed and high breakdown voltage,which makes it an ideal candidate for next generation 100 GHz＋ mixed signal integrated circuits.
文摘This letter presents a high speed 2 ： 1 regenerative dynamic frequency divider with an active transformer fabricated in 0.7μm InP DHBT technology with fTof 165 GHz and fmax of 230 GHz. The circuit includes a two-stage active transtbrmer, input buffer, divider core and output buffer. The core part of the frequency divider is composed of a double-balanced active mixer （widely known as the Gilbert cell） and a regenerative feedback loop. The active transformer with two stages can contribute to positive gain and greatly improve phase difference. Instead of the passive transformer, the active one occupies a much smaller chip area. The area of the chip is only 469 × 414μm2 and it entirely consumes a total DC power of only 94.6 mW from a single -4.8 V DC supply. The measured results present that the divider achieves an operating frequency bandwidth from 75 to 80 GHz, and performs a -23 dBm maximunl output power at 37.5 GHz with a 0 dBm input signal of 75 GHz.
