Preparation and Characterization on Nano- Sized Barium Titanate Powder Doped with Lanthanum by Sol-Gel Process

The nano-sized BaTiO3:La3+ powders were prepared by sol-gel process using butyl phthalate, barium acetate and lanthanum oxide as raw material, and these samples were tested by means of TG-DTA, XRD and SEM. The results indicate that with the annealing temperature and the doped concentration rising, the powders' particle sizes will increase and decrease respectively. When annealing temperature is 900℃and doped concentration is 7%, the phase is cubic without other phases, and the particle size of power is 43 .34 nm.

Effects of oxygen/nitrogen co-incorporation on regulation of growth and properties of boron-doped diamond films

Regulation with nitrogen and oxygen co-doping on growth and properties of boron doped diamond films is studied by using laughing gas as dopant. As the concentration of laughing gas(N2O/C) increases from 0 to 10%, the growth rate of diamond film decreases gradually, and the nitrogen-vacancy(NV) center luminescence intensity increases first and then weakens. The results show that oxygen in laughing gas has a strong inhibitory effect on formation of NV centers, and the inhibitory effect would be stronger as the concentration of laughing gas increases. As a result, the film growth rate and nitrogen-related compensation donor decrease, beneficial to increase the acceptor concentration(~3.2×10^(19)cm^(-3)) in the film. Moreover, it is found that the optimal regulation with the quality and electrical properties of boron doped diamond films could be realized by adding appropriate laughing gas, especially the hole mobility(~700cm^(2)/V·s), which is beneficial to the realization of high-quality boron doped diamond films and high-level optoelectronic device applications in the future.

Effect of emitter layer doping concentration on the performance of a silicon thin film heterojunction solar cell

A novel type of n/i/i/p heterojunction solar cell with a-Si：H（15 nm）/a-Si：H（10 nm）/epitaxial c-Si（47 p.m）/epitaxial c-Si（3 um） structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot wire chemical vapour deposition. The effect of the doping concentration of the emitter layer Sd （Sd=PH3/（PH3 ＋SiH4＋H2）） on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with Sd increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at Sd = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm2, a fill factor of 63.3%, and a conversion efficiency of 7.9%.

F4-TCNQ concentration dependence of the current voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si(MPS) Schottky barrier diode

In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.

Physical mechanism of secondary-electron emission in Si wafers

CMOS-compatible RF/microwave devices,such as filters and amplifiers,have been widely used in wireless communication systems.However,secondary-electron emission phenomena often occur in RF/microwave devices based on silicon(Si)wafers,especially in the high-frequency range.In this paper,we have studied the major factors that influence the secondary-electron yield(SEY)in commercial Si wafers with different doping concentrations.We show that the SEY is suppressed as the doping concentration increases,corresponding to a relatively short effective escape depthλ.Meanwhile,the reduced narrow band gap is beneficial in suppressing the SEY,in which the absence of a shallow energy band below the conduction band will easily capture electrons,as revealed by first-principles calculations.Thus,the new physical mechanism combined with the effective escape depth and band gap can provide useful guidance for the design of integrated RF/microwave devices based on Si wafers.

Channel Lateral Pocket or Halo Region of NMOSFET Characterized by Interface State R G Current of the Forward Gated Diode

The channel lateral pocket or halo region of NMOSFET characterized by interface state R G current of a forward gated diode has been investigated numerically for the first time.The result of numerical analysis demonstrates that the effective surface doping concentration and the interface state density of the pocket or halo region are interface states R G current peak position dependent and amplitude dependent,respectively.It can be expressed quantitatively according to the device physics knowledge,thus,the direct characterization of the interface state density and the effective surface doping concentration of the pocket or halo becomes very easy.

Physically based analytical model for plateau in gate C-V characteristics of strained silicon pMOSFET

A physically based analytical model was developed to predict the performance of the plateau observed in the gate C-V characteristics of strained-Si/SiGe pMOSFET.Experimental results were used to validate this model.The extracted parameters from our model were tOX=20 nm,ND=1×1016cm 3,tSSi=13.2 nm,consistent with the experimental values.The results show that the simulation results agree with experimental data well.It is found that the plateau can be strongly affected by doping concentration,strained-Si layer thickness and mass fraction of Ge in the SiGe layer.The model has been implemented in the software for strained silicon MOSFET parameter extraction,and has great value in the design of the strained-Si/SiGe devices.

High efficiency sub-nanosecond electro-optical Q-switched laser operating at kilohertz repetition frequency

Based on a theoretical model of Q-switched laser with the influences of the driving signal sent to the Pockels cell and the doping concentration of the gain medium taken into account,a method of achieving high energy sub-nanosecond Q-switched lasers is proposed and verified in experiment.When a Nd:YVO4 crystal with a doping concentration of 0.7 at.%is used as a gain medium and a driving signal with the optimal high-level voltage is applied to the Pockels cell,a stable single-transverse-mode electro-optical Q-switched laser with a pulse width of 0.77 ns and a pulse energy of 1.04 mJ operating at the pulse repetition frequency of 1 kHz is achieved.The precise tuning of the pulse width is also demonstrated.

Impact of doped boron concentration in emitter on high-and low-dose-rate damage in lateral PNP transistors

The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail.

A new algorithm based on C-V characteristics to extract the epitaxy layer parameters for power devices with the consideration of termination

Doping concentration and thickness of an epitaxy layer are the most essential parameters for power devices.The conventional algorithm extracts these two parameters by calculating the doping profile from its capacitance-voltage(C-V)characteristics.Such an algorithm treats the device as a parallel-plane junction and ignores the influence of the terminations.The epitaxy layer doping concentration tends to be overestimated and the thickness underestimated.In order to obtain the epitaxy layer parameters with higher accuracy,a new algorithm applicable for devices with field limited ring(FLR)terminations is proposed in this paper.This new algorithm is also based on the C-V characteristics and considers the extension manner of the depletion region under the FLR termination.Such an extension manner depends on the design parameters of the FLR termination and is studied in detail by simulation and modeling.The analytical expressions of the device C-V characteristics and the effective doping profile are derived.More accurate epitaxy layer parameters can be extracted by fitting the effective doping profile expression to the C-V doping profile calculated from the C-V characteristics.The relationship between the horizontal extension width and the vertical depth of the depletion region is also acquired.The credibility of the new algorithm is verified by experiments.The applicability of our new algorithm to FLR/field plate combining terminations is also discussed.Our new algorithm acts as a powerful tool for analyses and improvements of power devices.

Performance Enhancement of CZTS Solar Cell with CuSbS2 Back Surface Field: A Numerical Simulation Approach

Copper Zinc Tin Sulfide (CZTS) solar cell (SC) has garnered significant attention from researchers in recent years owing to its affordability, less toxic earth abundant constituents, remarkable conversion efficiency and promising prospects for the bulk manufacture of thin film solar cells. Moreover, CZTS exhibits a high absorption coefficient and possesses an optimal adjustable direct band gap, making it a promising candidate for various photovoltaic applications. Hence, in this study, a new configuration (CuSbS2/CZTS/CdS/i-ZnO/ Al: ZnO) is introduced for CZTS SC, which was simulated using SCAPS-1D. The utilization of CuSbS2 as the back surface field (BSF) and CdS as the buffer layer was investigated to enhance the performance of CZTS SC. Moreover, a comparative numerical analysis was carried out to contrast the SC configurations of CZTS/CdS/i-ZnO/Al: ZnO and CuSbS2/CZTS/CdS/i-ZnO/Al: ZnO. In this study, the impact on SC parameters such as open circuit voltage (Voc), short- circuit current density (Jsc), Fill-factor (FF), and Power Conversion Efficiency (PCE) by varying thickness, doping density, defect density of absorber and buffer layer, thickness and doping density of BSF, and operating temperature have been thoroughly investigated. The optimum structure consists of i-ZnO and Al: ZnO for the window layer, CdS for the buffer layer, CZTS for the absorber layer, and BSF layers with thicknesses of 50 nm, 200 nm, 50 nm, 2000 nm, and 50 nm, respectively. The designed SC with a BSF layer had a PCE of 28.76%, JSC of 32.53 mA/cm2, Voc of 1.01233 V, and FF of 87.35%. The structure without a BSF layer has a PCE of 24.21%, Voc of 0.898 V, JSC of 31.56 mA/cm2, and FF of 85.32%. Furthermore, an analysis of temperature, quantum efficiency (QE), C- V characteristics and the J-V curve was conducted, revealing the potential of CuSbS2 as a BSF and CdS as a buffer layer in high-performance, cost-effective CZTS SC designs.

Variation of optimum yttrium doping concentrations of perovskite type proton conductors BaZrl_xYxO3-~ （0~~~_0.3） with temperature

A solid state reaction method was used to prepare the perovskite-structured compounds BaZrl-xYxO3-a （x=0, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3）. The X-ray diffraction （XRD） pattern indicated that the target perovsldte phases were obtained. With increasing Y con- centration the unit cell parameters of BaZrl-xYxO3-a samples were expanded, and Y doping became more difficult. However, high synthesis temperature is helpful to promote Y doping. The SEM results showed that the samples exhibited poor sinterability with in- creasing Y-doping content. Thermal gravimetric （TG） curves analysis showed the more mass decreasing of BaZrl-xYxO3-a （0≤x≤0.3） samples at high temperature with more Y doping and more proton introducing. The electrochemical impedance spectra （EIS） of specimens showed that conductivities of BaZrl_xYxO3（0≤x≤0.3） increased with increasing temperature from 300 to 900 ℃ in wet air. At 900 ℃, the conductivity of BaZrl-xYxO3-a （0≤x≤0.3） first increased with increasing doped amount of Y, and reached the high- est value of 1.07x 104 S/cm when x was 0.2, then decreased gradually with further increasing Y content. At 600 ℃, BaZr0.75Y0.2503-a displayed the highest conductivity, while the conductivity of BaZro.rYo.303-a was the highest at 300 ℃. The results indicated that there should be an optimum Y doping concentration yielding the highest conductivity at a constant temperature, and the optimum Y doping concentration should increase in the humidity atmosphere as the temperature decreases. So increasing the Y-doping concen- tration is helpful to improve the conductivities of BaZrl-xYxO3-a materials at low temperature.

A Bulky Pyridinylfluorene/Triphenylamine Hybrid Used as Host Material for Heavily-Doped Blue Electrophosphorescent Devices

In this work, a novel molecule pyridinylfluorene/triphenylamine hybrid （TPyFTPA） with bulky steric hindrance effects has been synthesized successfully by substituting 9-（pyridine-2-yl）-fluoren-9-yl with triphenylamine （TPA） via Friedel-Crafts reaction, which possesses good thermal stability and triplet energy （ET） of 420 ℃ with 5% weight loss and 2.86 eV, respectively. Moreover, the bulky steric hindrance material shows high stable morphology by heating to 200 ℃ without finding melting phenomena and crystallization that is demonstrated by differential scanning calorimetry （DSC） curve. The bulky pyridinylfluorene end-capped TPA has been used as host material for blue phosphorescent organic light-emitting diodes （PhOLEDs） with maximum external quantum efficiencies （EQEs） of 2.7%, 3.7%, and 3.5%, at the doping ratios of 10%, 30%, and 40%, respectively. The performances of TPyFTPA-based blue PhOLEDs own wide concentration ranging from 10% to 40%, which indicates the bulky TPyFTPA might be a potential candidate for inexpensive products with simplifying process for the applications in full-color display and solid state lighting.

TiO_2-doped Fe_3O_4 nanoparticles as high-performance Fenton-like catalyst for dye decoloration

Fenton reaction based on Fe2+-H2O2 system has been widely applied in water remediation, but the obvious drawbacks largely hinder its practical uses. Alternatively, heterogeneous nanomaterials with proper surface modification could be used as Fenton-like catalysts. Surface doping of Ti O2 could concentrate the pollutants surrounding the Fe3O4 catalyst, which might benefit the catalytic performance of Fe3O4. Herein, we reported that Ti O2-doped Fe3O4 nanoparticles(NPs) could be used as high-performance Fenton-like catalyst for dye decoloration in near neutral environment, where the doping of Ti O2 on Fe3O4 surface dramatically improved the catalytic activity of Fe3O4 in Fenton-like reaction. Ti O2-doped Fe3O4 NPs catalyzed the decomposition of H2O2 to oxidize methylene blue without external energy supply, resulting in effective decoloration. Ti O2-doped Fe3O4 NPs showed high catalytic activity under various p H values and even in the presence of radical scavenger. More catalysts and H2O2 would facilitate the decoloration. At higher temperature, the decoloration became faster and more effective. The implication to the environmental applications of Ti O2-doped Fe3O4 NPs is discussed.

Effects of indium doping concentration on the morphology and electrical properties of one-dimensional SnO_2 nanostructures prepared by a molten salt method

In this paper,indium doped SnO2 nanorods and nanowires have been prepared by the molten salt method,and the effects of indium doping concentration on the morphology and electrical properties of one-dimensional(1D) SnO2 nanostructures have been studied.It is found that indium doping concentration can affect the epitaxial growth,morphology and the electrical conductance of 1D SnO2 nanostructures.It is also found that the element made by using 6 mol% indium doped SnO2 nanorods responds to nitrogen gas.

Ni(Pt) germanosilicide contacts formed on heavily boron doped Si_(1-x)Ge_x substrates for Schottky source/drain transistors

The electrical properties of Ni0.95Pt0.05-germanosilicide/Si1_xGex contacts on heavily doped p-type strained Sil-xGex layers as a function of composition and doping concentration for a given composition have been investigated. A four-terminal Kelvin-resistor structure has been fabricated by using the conventional com- plementary metal-oxide-semiconductor （CMOS） process to measure contact resistance. The results showed that the contact resistance of the Ni0.95Pt0.05-germanosilicide/Sil-xGex contacts slightly reduced with increasing the Ge fraction. The higher the doping concentration, the lower the contact resistivity. The contact resistance of the samples with doping concentration of 4×10^19 cm^-3 is nearly one order of magnitude lower than that of the sam- ples with doping concentration of 5 × 10^17 cm^-3. In addition, the influence of dopant segregation on the contact resistance for the lower doped samples is larger than that for the higher doped samples.

Controllable substitutional vanadium doping in wafer-scale molybdenum disulfide films

Substitutional atomic doping of transition metal dichalcogenides(TMDs)in the chemical vapor deposition(CVD)process is a promising and effective strategy for modifying their physicochemical properties.However,the conventional CVD method only allows narrow-range modulation of the dopant concentration owing to the low reactivity of the precursors.Moreover,the growth of wafer-scale monolayer TMD films with high dopant concentrations is much more challenging.Herein,we report a facile doping approach based on liquid precursor-mediated CVD process for achieving high vanadium(V)doping in the MoS_(2)lattice with excellent doping uniformity and stability.The lateral growth of the host MoS_(2)lattice and the reactivity of the V precursor were simultaneously improved by introducing an alkali metal halide as a reaction promoter.The metal halide promoter enabled the wafer-scale synthesis of V-incorporated MoS_(2)monolayer film with excessively high doping concentrations.The excellent wafer-scale uniformity of the highly V-doped MoS_(2)film was confirmed through a series of microscopic,spectroscopic,and electrical analyses.

Process techniques of charge transfer time reduction for high speed CMOS image sensors

This paper proposes pixel process techniques to reduce the charge transfer time in high speed CMOS image sensors. These techniques increase the lateral conductivity of the photo-generated carriers in a pinned photodiode （PPD） and the voltage difference between the PPD and the floating diffusion （FD） node by controlling and optimizing the N doping concentration in the PPD and the threshold voltage of the reset transistor, respectively. The techniques shorten the charge transfer time from the PPD diode to the FD node effectively. The proposed process techniques do not need extra masks and do not cause harm to the fill factor. A sub array of 32 x 64 pixels was designed and implemented in the 0.18 #m CIS process with five implantation conditions splitting the N region in the PPD. The simulation and measured results demonstrate that the charge transfer time can be decreased by using the proposed techniques. Comparing the charge transfer time of the pixel with the different implantation conditions of the N region, the charge transfer time of 0.32 μs is achieved and 31% of image lag was reduced by using the proposed process techniques.

Influence of silicon cluster on epitaxial growth of silicon carbide

Precursor concentration dependences of growth rate, doping concentration and surface morphology have been investigated in the epitaxial growth of 4H-SiC（0001） epilayers with horizontal hot-wall CVD system using various precursor concentrations under constant C/Si ratio. Form the experimental data it is found that silicon cluster which is formed through gas phase nucleation plays an important role in controlling the doping concentration and epitaxial growth rate of the silicon carbide. It was observed that the concentration of silicon clusters cannot reach the equilibrium value in the process by using a low Sill4 concentration, and this phenomenon has not been reported by others.

A novel SOI pressure sensor for high temperature application

The silicon on insulator（SOI） high temperature pressure sensor is a novel pressure sensor with highperformance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper.The key factors including doping concentration and power are analyzed. The process of the sensor is designed with the critical process parameters set appropriately. The test result at room temperature and high temperature shows that nonlinear error below is 0.1%, and hysteresis is less than 0.5%. High temperature measuring results show that the sensor can be used for from room temperature to 350℃ in harsh environments. It offers a reference for the development of high temperature piezoresistive pressure sensors.